2SB1424 / 2SA1585S
Transistors
Rev.A 1/3
Low VCE(sat) T ransistor (−20V, −3A)
2SB1424 / 2SA1585S
zFeatures
1) Low VCE(sat).
VCE(sat) = −0.2V (T yp.)
(IC/IB = −2A / −0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SD2150 / 2SC4115S.
zStructure
Epitaxial planar type
PNP silicon transistor
zExternal dimensions (Unit : mm)
3±0.2(15Min.)
4±0.2 2±0.2
0.45
0.5
0.45
5
(1) (2) (3)
−0.05
+
0.15
+
0.15
−0.05
2.5
+
0.4
−0.1
3Min.
2SA1585S
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
2SB1424
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
±0.3
−0.1
+
0.2
−0.05
+
0.1
+
0.2
−0.1
(3)(2)(1)
4.0
1.0±0.2 0.5±0.1
2.5
3.0±0.2 1.5±0.1
1.5±0.1
0.4±0.1 0.5±0.1 0.4±0.1
0.4
1.5±0.1
4.5
1.6±0.1
∗
Denotes hFE
Abbreviated symbol: AE
∗
zAbsolute maximum ratings (Ta=25°C)
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−20 V
V
V
A
W
°C
°C
−20
−6
−3
∗
−2
ICP A(Pulse)−5
0.5
2SB1424
2SB1424
2SA1585S
0.4
150
−55 to 150
Symbol Limits Unit
∗
Single pulse Pw=10ms
2SA1585S
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SB1424 / 2SA1585S
Transistors
Rev.A 2/3
zElectrical characteristics (Ta=25°C)
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
−20
−20
−6
−
−
120
−
−
−
−
−
−
−
−
−
−
240
35
−
−
−
−0.1
−0.1
390
−0.5
−
−
VI
C
= −50
µ
A
I
C
= −1mA
I
E
= −50
µ
A
V
CB
= −20V
V
EB
= −5V
V
CE
= −2V, I
C
= −0.1A
I
C
/I
B
= −2A/ −0.1A
V
CE
= −2V, I
E
=0.5A, f=100MHz
V
CB
= −10V, I
E
=0A, f=1MHz
V
V
µ
A
µ
A
−
V
MHz
pF
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
zPackaging specifications and hFE
TP T100
5000 1000
−
−
QR
h
FE
QR
2SA1585S
2SB1424
Type
Package
Code
Basic ordering
unit (pieces)
Taping
hFE values are classified as follows :
Item Q R
h
FE
120 to 270 180 to 390
zElectrical characteristic curves
−1m
−2m
−5m
−0.01
−0.02
−0.05
−0.1
−0.2
−0.5
−1
−2
−5
−10
0−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
V
CE
= −2V
Ta=100°C
−40°C
25°C
0
−0.4
−0.8
−1.2
−1.6
−2.0
0−0.2 −0.4 −0.6 −0.8 −1.0
COLLECTOR CURRENT : IC
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
−2mA
−6mA
−4mA
Ta=25°C
IB=0A
−8mA
−10mA
−20mA
−12mA
−14mA
−16mA
−18mA
Fig.2 Grounded emitter output
characteristics ( )
0
−1
−2
−3
−4
−5
0−1−2−3−4−5
COLLECTOR CURRENT : IC
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta=25°C
−20mA
−
25mA
−30mA
−35mA
−
40mA
−5mA
−15mA
−10mA
IB=0A
−45mA
−50mA
Fig.3 Grounded emitter output
characteristics ( )
2SB1424 / 2SA1585S
Transistors
Rev.A 3/3
−2m −5m −0m −20m −50m −100m −200m −500m −
1−2−5 −10
−1m
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
5k
2k
1k
500
200
100
50
20
10
5
V
CE
= −2V
Ta=100°C
25°C
−40°C
Fig.4 DC current gain vs.
collector current
−2
−2m
−5m
−10m
−20m
−50m
−100m
−200m
−500m
−1
−
2m
−
5m
−
10m
−
20m
−
50m
−
100m
−
200m
−
500m
−
2
−
1
−
5
−
10
−
1m
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
I
C
/I
B
=10
Ta=100°C
−40°C
25°C
Fig.5 Collector-emitter saturation
voltage vs. collector curren ( )
−2
−2m
−5m
−10m
−20m
−50m
−100m
−200m
−500m
−1
−
2m
−
5m
−
10m
−
20m
−
50m
−
100m
−
200m
−
500m
−
2
−
1
−
5
−
10
−
1m
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C (A)
I
C
/I
B
=20
Ta=100°C
−40°C
25°C
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
EMITTER INPUT CAPACITANCE : C
ib
(pF)
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
10
20
50
100
200
500
1000
−0.1 −0.2 −0.5 −1−2−5−10 −20 −50
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
C
ib
C
ob
Fig.8 Gain bandwidth product vs.
emitter current
Collector output capacitance vs.
collector-base voltage
−2
−2m
−5m
−10m
−20m
−50m
−100m
−200m
−500m
−1
−
2m
−
5m
−
10m
−
20m
−
50m
−
2
−
1
−
5
−
10
−
1m
COLLECTOR SATURATION VOLTAGE : V
CE(sat) (V)
COLLECTOR CURRENT : I
C
(A)
−
100m
−
200m
−
500m
−40°C
25°C
Ta=100°C
I
C
/I
B
=50
Fig.7 Collector-emitter saturation
voltage vs. collector current ( )
1 2 5 10 20 50 100 200 5001000
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(mA)
1000
500
200
100
50
20
10
5
2
1
Ta=25°C
V
CE
= −2V
Fig.9 Emitter input capacitance vs.
emitter base voltage
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
