MOTOROLA SC {XSTRS/R FF 46 pe usez7e5y OOe8LIW? 1 : _ _ we ee ee a DoD SL es ee ee TL ST 6367254 MOTOROLA SC (XSTRS/R F). .. S6D 81947 dD. | MAXIMUM RATINGS _- : T - aN Rating Symbol Value Unit Zz 7 O i Collector-Emitter Voltage VceEo 32 Vv BCW60 A, B,C,D 5 Collector-Base Voltage Vcso 32 Vv : Emitter-Base Voltage VEBO 5.0 Vv , . Collector Current Continuous Ic 100 mAdc CASE 318-02/03, STYLE 6 5 7 7 SOT-23 (TO-236AA/AB) : THERMAL CHARACTERISTICS : Characteristic Symbol Max Unit | . Total Device Dissipation FR-5 Board,* Pp 225 mW 3 Collector Ta = 25C | Derate above 25C 1.8 mwrc a: 3 ; Thermal Resistance Junction to Ambient ReJA 556 C/imW 1 ge Bae - - Total Device Dissipation Pp 300 mw 2 - Alumina Substrate,** Ta = 25C ' i Derate above 25C 2.4 mwrc 2 Emitter : Thermal Resistance Junction to Ambiant Raja 417 CimW { Junction and Storage Temperature TS. Tstg 180 C - GENERAL PURPOSE TRANSISTOR *FR-5 = 1.0 x 0.75 x 0.62 in. - **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina, DEVICE MARKING [ BcWeoA = AA; BCW60B = AB; BCWE0C = AC; BCW60D AD | NPN SILICON Refer to MPS3904 fi . ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) fer to MPS3904 for graphs [ Characteristic [ Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BRICEO 32 Vde t (Ig = 2.0 mAde, Ig = 0) | Emitter-Base Breakdown Voltage V(BRJEBO 5.0 _ Vde | (Iz = 1.0 pAdc, Ic = 0) ! Collector Cutoff Current IcES j (VcE = 32 Vdc) 20 nAde | {VCE = 32 Vde, Ta = 150C} - 20 Ade : Emitter Cutoff Current lEBo 20 nAdc (VeR = 4.0 Vde, Ic = 0) ~ : ON CHARACTERISTICS DC Current Gain HFE _ (ic = 10 pAdc, Voce = 5.0 Vdc} BCW60A 20 - BCW60B 30 _ BCWs0C 40 _ BCW60D 100 _ I {ic = 2.0 mAdc, VcE = 5.0 Vdc) BCW60A 120 220 = BCW60B 175 310 BCW60C 250 460 BCW60D 380 630 (ig = 50 mAdge, Voge = 1.0 Vdc) BCW60A 60 _ BCW60B 70 - Bcwe0C 90 _ BCW60D 100 _ AC Current Gain hfe _ (lc = 2.0 mAdc, Veg = 5.0 Vdc, f = 1.0 kHz) BCW60A 125 250 . BCW60B 175 350 BCW60C 250 500 BCW60D 350 700 Collector-Emitter Saturation Voltage VcE(sat) Vde (lc = 50 mAde, Ip = 1.25 mAdc) 0.55 (Ie = 10 mAdg, Ig = 0.25 mAdc} - 0.35 Base-Emitter Saturation Voltage VBE(sat) Vde (lg = 50 mAdg, Ip = 1.25 mAdc) 07 1,05 * (Ic = 50 mAde, Ig = 0.25 mAde} 06 0.85 Base-Emitter On Voltage VBE(on) 0.6 0.76 Vde {I = 2.0 mAdc, Voce = 5.0 Vdc) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-12 MOTOROLA SC {XSTRS/R FF 4h pe Beanzesy OO&l44a 3 fT [ 6367254 MOTOROLA SC (XSTRS/R FP? BCW60A,B,C,D 7 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) | : : [ Characteristic | Symbol | Min | Max | Unit | i . SMALL-SIGNAL CHARACTERISTICS | Current-Gain Bandwidth Product fr 125 _ MHz {lg = 10 mAde, Voge = 5.0 Vde, f = 1.0 MHz) i Output Capacitance Cobo _ 45 pF t (VcE = 10 Vde, Ic = 0, f = 1.0 MHz) : Noise Figure NF _ 6,0 dB {I = 0.2 mAdc, VcE = 5.0 Vde, Rg = 2.0 kN, f = 1.0 kHz, BW = 200 Hz) SWITCHING CHARACTERISTICS . Turn-On Time ton _ 150 ns {Ig = 10 mAde, Igy = 1.0 mAdc) Turn-Off Time toff _ 800 ns (Ip2 = 1.0 mAdc, Vpg = 3.6 Vde, Ry = Ro = 5.0 k0, . RL = 990 9) i | [ | MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-13 Perens MOTOROLA SC {IXSTRS/R FF 4b vel b367254 00619449 5 I we te = = = 6367254 MOTOROLA SC CXSTRS/R FD). ... _ 86D. 81949 _oB_.. MAXIMUM RATINGS . TT 2 7 -O g Rating Symbol Value Unit Collector-Emitter Voltage VcEO 32 Vv i Collector-Base Voltage Voso 32 Vv BCW6 1A, BCW61 B | Emitter-Base Voltage VeBO 5.0 Vv BCW61 C, BCW6 i D : Collector Current Continuous ic 100 mAdc | CASE 318-02/03, STYLE 6 | THERMAL CHARACTERISTICS SOT-23 (TO-236AA/AB) i Characteristic Symbol Max Unit t Total Device Dissipation FR-5 Board,* Pp 226 mW . Ta = 25C 3 Collector Derate above 25C 1.8 mwrc Thermal Resistance Junction to Ambient RaJA 556 *CimW 8 Tota! Device Dissipation Pp 300 mw 1 ge Base Alumina Substrate,** Ta = 25C 2 Derate above 25C 24 mWrc 2 Emitter Thermal Resistance Junction to Ambient Raa 41? CimW : Junction and Storage Temperature Ty. Tstg 150 xo) *FR-5 = 1.0 x 0.75 x 0.62 in. . **Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina. GENERAL PURPOSE TRANSISTOR DEVICE MARKING PNP SILICON | Bcwe1A = BA; BCW61B = BB; BCW61C = BC; BCW61D = BD | Refer to 2N5086 for graphs. ELECTRICAL CHARACTERISTICS (Tp = 25C unless otherwise noted.) | Characteristic | Symbol | Min Max Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 32 _ Vde (ic = 2.0 mAdc, Ip = 0} Emitter-Base Breakdown Voltage ViBR)JEBO 5.0 Vde (lE = 1.0 pAds, Ic = 0} Collector Cutoff Current IcES {Voce = 32 Vdc} _ 20 nAde (VCE = 32 Vde, Ta = 150C) _ 20 pAde ON CHARACTERISTICS , DC Current Gain hFE _ {Ic = 10 wAdc, Voge = 5.0 Vde) BCW61A 20 BCW61B 30 _ BCW61C 40 _ BCW61D 100 (ig = 2.0 mAde, Veg = 5.0 Vde) BCW61A 120 220 BCW61B 140 310 BCwe61C 250 460 ! BCW61D 380 630 (ic = 50 mAde, Vcg = 1.0 Vdc) BCW61A 60 _ BCW61B 80 - BCWS1C 100 _ . BCW61D 100 _ AC Current Gain hfe {Ic = 2.0 mAdc, VcE = 5.0 Vde, f = 1.0 kHz} BCW61A 125 260 - BCW61B 175 350 BCW61C 250 500 BCW61D 350 700 Collector-Emitter Saturation Voltage VcE(sat} Vde (I = 50 mAdc, Ip = 1.25 mAdc} _ 0.55 {I = 10 mAde, Ig = 0.25 mAdc) _ 0,25 Base-Emitter Saturation Voltage VBE(sat) Vdc (I = 50 mAde, Ip = 1.25 mAdc) 0.68 1.05 (Ic = 50 mAde, Ip = 0.25 mAdc) .0.6 0.85 Base-Emitter On Voltage VBE{on) 0.6 0.75 Vde {Ic = 2.0 mAdc, Vege = 5.0 Vdc) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-14 MOTOROLA SC IXSTRS/R FT 4h pe Bf pau725y 0041950 h T fi 6367254 MOTOROLA SC (XSTRS(R F) . _. . 86D 81950. D | BCW61A, BCW61B, BCW61C, BCW61D . -O T2707 | i ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) | i Characteristic | Symbot Min | Max | Unit | SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo _ 6.0 pF t (VcE = 10 Vde, Ic = 0, f = 1.0 MHz) Noise Figure NF ~ 6.0 dB \ lic = 0.2 mAde, Voce = 5.0 Vde, Rg = 2.0 kM, f = 1.0 kHz, BW = 200 Hz} SWITCHING CHARACTERISTICS Turn-On Time fon - 150 ns (ic = 10 mAde, tg1 = 1.0 mAdc) Turn-Off Time toff _ 800 ns (Iga = 1.0 mAdc, Vgp = 3.6 Vde, Ry = Ro = 5.0 kN, Ry = 990.) i f t t 1 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 3-15 -