© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/27/20
Thyristors
Through Hole Radial – 400V > T2500D
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage (Note 1)
(Sine Wave 50 to 60 Hz, TJ = -40 to +100°C, Gate Open) VDRM,
VRRM
400 V
On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz) (TC = +80°C) IT (RMS) 6.0 A
Peak Non−Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz, TC= +80°C) ITSM 60 A
Circuit Fusing Considerations (t = 8.3 ms) I2t15 A2s
Peak Gate Power (Pulse Width = 10 µsec, TC = +80°C) PGM 16 W
Average Gate Power (t = 8.3 msec, TC = +80°C) PGM (AV) 0.2 W
Peak Gate Current (Pulse Width = 10 µsec) IGM 4.0 A
Operating Junction Temperature Range @ Rated VRRM and VDRM TJ-40 to +125 °C
Storage Temperature Range Tstg -40 to +150 °C
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case R8JC 2.7 °C/W
Maximum Device Temperature for Soldering Purposes for 10 Sec TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Maximum Ratings (TJ = 25°C unless otherwise noted)
Electrical Characteristics - OFF (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Ty p Max Unit
†Peak Repetitive Blocking Current
(VAK = VDRM = VRRM; Gate Open) TJ = 25°C
TJ = 100°C IDRM,
IRRM
- - 10 µA
- - 2.0 mA
Electrical Characteristics - ON (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Dynamic Characteristics
Characteristic Symbol Min Ty p Max Unit
Critical Rate of Rise of Off-State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 100°C) dV/dt − 50 − V/µs
Characteristic Symbol Min Ty p Max Unit
Peak Forward On-State Voltage (Note 3) (ITM = ±30 A) VTM − – 2.0 V
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+)
IGT
_10 25
mA
MT2(+), G(−) _ 20 60
MT2(−), G(−) _ 15 25
MT2(−), G(+) _ 30 60
Gate Trigger Voltage (Continuous dc) (All Four Quadrants)
(VD = 12 Vdc, RL = 100 Ω) VGT – 1.25 2.5 V
Gate Non−Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ω, TC = 100°C) VGD 0.2 _ _ V
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open , Initiating Current) = ±200 mA) IH_15 30 mA
Gate Controlled Turn-On Time
(Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 µs) tgt _1.6 _ µs