Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC ................................................................... 800A
●VCES ....................................................... 3300V
●Insulated Type
●1-element in a Pack
●AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM800HC-66H
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CIRCUIT DIAGRAM
C
G
E
CC
EE
C
G
3 - M4 NUTS
4 - M8 NUTS
C
E
CM E
C
E
LABEL
57
±0.1
57
±0.1
5.2
±0.2
10.65
±0.2
5
±0.15
6 - φ7
±0.1
MOUNTING HOLES
114
±0.1
130
±0.5
40
±0.2
140
±0.5
48.8
±0.3
10.35
±0.2
61.5
±0.3
18
±0.2
40
±0.3
15
±0.2
29.5
±0.5
+0.1
–0.2
20
124
±0.1
screwing depth
min. 16.5
screwing depth
min. 7.7
38
+1
0
28
+1
0
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector-emitter voltage
Gate-emitter voltage
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 100°C
Pulse (Note 1)
Pulse (Note 1)
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 2200V, VCES ≤ 3300V, VGE = 15V
Tj = 125°C
Collector current
Emitter current
3300
±20
800
1600
800
1600
9600
–40 ~ +150
–40 ~ +125
–40 ~ +125
6000
10
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
V
A
A
A
A
W
°C
°C
°C
V
µs
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Top
Tstg
Viso
tpsc
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
V
V
VCE = VCES, VGE = 0V, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 800A, VGE = 15V, Tj = 25°C (Note 4)
IC = 800A, VGE = 15V, Tj = 125°C (Note 4)
VCC = 1650V, IC = 800A, VGE = 15V, Tj = 25°C
IE = 800A, VGE = 0V, Tj = 25°C (Note 4)
IE = 800A, VGE = 0V, Tj = 125°C (Note 4)
VCC = 1650V, IC = 800A, VGE = ±15V
RG(on) = 2.5Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 1650V, IC = 800A, VGE = ±15V
RG(off) = 2.5Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 1650V, IC = 800A, VGE = ±15V
RG(on) = 2.5Ω, Tj = 125°C, Ls = 100nH
Inductive load
IC = 80mA, VCE = 10V, Tj = 25°C
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
Min Typ Max
10
0.5
4.20
—
—
—
—
—
3.60
—
1.60
1.00
—
2.50
1.00
—
1.4
—
—
mA
µA
nF
nF
nF
µC
V
µs
µs
J/pulse
µs
µs
J/pulse
µs
µC
J/pulse
—
—
3.30
3.60
120
12.0
3.6
5.7
2.80
2.70
—
—
1.10
—
—
1.05
—
540
0.60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
Qg
VEC
(Note 2)
td(on)
tr
Eon
td(off)
tf
Eoff
trr
(Note 2)
Qrr
(Note 2)
Erec
(Note 2)
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
6.0
5.0
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
7.0
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
K/kW
K/kW
K/kW
Thermal resistance
Contact thermal resistance
Min Typ Max
13.0
25.0
—
—
—
8.0
—
—
—
THERMAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
M
—
CTI
da
ds
LC-E(int)
RC-E(int)
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
TC = 25°C
N·m
kg
—
mm
mm
nH
mΩ
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Min Typ Max
13.0
6.0
2.0
—
—
—
—
—
—
—
—
—
1.0
—
—
—
18
0.20
7.0
3.0
1.0
—
600
19.5
32.0
—
—
MECHANICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
EMITTER-COLLECTOR VOLTAGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
1000
1200
1400
1600
800
600
400
200
03421056
1000
1200
1400
1600
800
600
400
200
068420 10 12
6
5
4
3
2
0400 8000 1200 1600
1
6
5
4
3
2
0400 8000 1200 1600
1
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
CE
= 20V
T
j
= 125°C
V
GE
= 10V
V
GE
=8 V
V
GE
= 12V
V
GE
= 20V
V
GE
= 15V
V
GE
= 15V
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (nF)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (µC)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES (J/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
GATE RESISTANCE (Ω)
SWITCHING ENERGIES (J/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
064208
2.5
2
1.5
1
0.5
012008004000 1600
4
3
2
1
01510
5020
102
103
101
100
100
10-1 23 57 101102
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
Eon
Eoff
Erec
Eoff
Cies
Coes
Cres
VCC = 1650V, IC = 800A
VGE = ±15V
Tj = 125°C, Inductive load
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 2.5Ω
Tj = 125°C, Inductive load Eon
VGE = 0V, Tj = 25°C
f = 100kHz
VCC = 1650V, IC = 800A
Tj = 25°C
Erec
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
-2
10
-3
23 57
10
-1
23 57
10
0
23 57
10
1
23 57
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
TIME (s)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY TIME (µs)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2
1.0
0.8
0.6
0.4
0
0.2
REVERSE RECOVERY CURRENT (A)
10
1
10
2
10
0
10
-1
10
2
10
1
23 57 10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
10
3
10
4
10
2
10
1
10
1
10
2
10
0
10
-1
10
2
10
1
23 57 10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
V
CC = 1650V, VGE = ±15V
RG(on) = RG(off) = 2.5Ω
Tj = 125°C, Inductive load
VCC = 1650V, VGE = ±15V
RG(on) = RG(off) = 2.5Ω
Tj = 125°C, Inductive load
lrr
Single Pulse, TC = 25°C
Rth(j–c)Q = 13K/kW
Rth(j–c)R = 25K/kW
trr
td(off)
td(on)
tf
tr
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM800HC-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
EMITTER-COLLECTOR VOLTAGE (V)
REVERSE RECOVERY CURRENT (A)
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
2500
2000
1500
1000
500
03000200010000 4000
2500
2000
1500
1000
500
03000200010000 4000
V
CC
≤ 2200V, di/dt
≤ 3600A/µs
T
j
= 125°C
V
CC
≤ 2200V, V
GE
= +/-15V
T
j
= 125°C, R
G(off)
≥ 2.5Ω
