LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L2SA1774*T1 COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 SC-89 !Absolute maximum ratings (Ta=25C) Symbol Limits Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage Parameter Unit VEBO -6 V Collector current IC -0.15 A (DC) Collector power dissipation PC 0.15 W Junction temperature Tj 150 C Storage temperature Tstg -55~+150 C !Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO -60 - - V IC=-50A Collector-emitter breakdown voltage BVCEO -50 - - V IC=-1A Emitter-base breakdown voltage BVEBO -6 - - V IE=-50A Collector cutoff current ICBO - - -0.1 A VCB=-60V Emitter cutoff current IEBO - - -0.1 A VEB=-6V VCE(sat) - - -0.5 V IC/IB=-50mA/-5mA hFE 120 - 560 - VCE=-6V, IC=-1mA Transition frequency fT - 140 - MHz Output capacitance Cob - 4.0 5.0 pF Collector-emitter saturation voltage DC current transfer ratio Conditions VCE=-12V, IE=2mA, f=30MHz VCB=-12V, IE=0A, f=1MHz !Device marking L2SA1774QT1=FQ L2SA1774ST1=FS L2SA1774RT1=FR ! hFE values are classified as follows: Item Q R S hFE 120~270 180~390 270~560 L2SA1774*T1-1/3 LESHAN RADIO COMPANY, LTD. L2SA1774*T1 !Electrical characteristic curves -5 -2 -1 -0.5 -0.2 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -28.0 -8 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5A 0 BASE TO EMITTER VOLTAGE : VBE (V) -0.4 -0.8 -1.2 DC CURRENT GAIN : hFE 25C 100 -40C 200 100 50 50 -250 -200 -150 -100 -20 -50A IB=0 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) -1 Ta=25C -0.5 -0.2 IC/IB=50 -0.1 20 10 -0.05 -2 -5 -10 -20 -0.2 -0.5 -1 -50 -100 TRANSITION FREQUENCY : fT (MHz) -0.5 -0.2 -0.1 Ta=100C 25C -40C -0.05 -0.2 -0.5 -1 -2 1000 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Ta=25C VCE=-12V 200 100 50 1 2 5 10 20 -5 -10 -20 -50 -100 Fig.6 Collector-emitter saturation voltage vs. collector current (I) 500 0.5 -2 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (II) Fig.4 DC current gain vs. collector current (I) lC/lB=10 -0.2 -0.5 -1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -1 VCE=-6V -5 -10 -20 -50 -100 -2 50 100 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) -0.2 -0.5 -1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -500 -450 -400 -350 -300 Fig.3 Grounded emitter output characteristics (II) Ta=100C 200 Ta=25C -40 Fig.2 Grounded emitter output characteristics (I) VCE=-5V -3V -1V Ta=25C -60 IB=0 -1.6 -2.0 500 500 -80 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics DC CURRENT GAIN : hFE -100 -31.5 COLLECTOR CURRENT : IC (mA) -10 -35.0 Ta=25C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) -20 -10 VCE=-6V Ta=100C 25C -40C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 20 Ta=25C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage L2SA1774*T1-2/3 LESHAN RADIO COMPANY, LTD. L2SA1774*T1 SC-89 A -X- 3 1 2 B -Y- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. S K G 2 PL D 0.08 (0.003) M DIM A B C D G H J K L M N S 3 PL X Y N M C J -T- H MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF --- --- 10 --- --- 10 1.50 1.60 1.70 MIN 0.059 0.030 0.024 0.009 0.004 0.012 --- --- 0.059 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF --- --- 0.063 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 10 0.067 SEATING PLANE H L G RECOMMENDED PATTERN OF SOLDER PADS L2SA1774*T1-3/3