LESHAN RADIO COMPANY, LTD.
1
BASE
COLLECTOR
3
General Purpose Transistors
PNP Silicon
2
EMITTER
L2SA1774*T1
1
3
2
!
!!
!Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
60 V
V
V
A (DC)
˚C
˚C
50
6
0.15
W0.15
150
55~+150
Symbol Limits Unit
!
!!
!Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Parameter Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
6
120
140
4.0
0.1
0.1
560
0.5
5.0
VI
C
=
50µA
I
C
=
1µA
I
E
=
50µA
V
CB
=
60V
V
EB
=
6V
V
CE
=
6V, I
C
=
1mA
I
C
/I
B
=
50mA/5mA
V
CE
=
12V, I
E
=
2mA, f
=
30MHz
V
CB
=
12V, I
E
=
0A, f
=
1MHz
V
V
µA
µA
V
MHz
pF
Typ. Max. Unit Conditions
SC-89
hFE values are classified as follows:
Item Q R S
h
FE
120~270 180~390 270~560
!!!!Device marking
!!!!
L2SA1774QT1=FQ L2SA1774ST1=FS L2SA1774RT1=FR
L2SA1774*T1-1/3
!
!!
!Electrical characteristic curves
Fig.1 Grounded emitter propagation
characteristics
0.2
COLLECTOR CURRENT : Ic (
mA)
50
20
10
5
2
1
0.5
0.2
0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VCE=6V
BASE TO EMITTER VOLTAGE : VBE (
V)
Ta=100˚C
25˚C
40˚C
Fig.2 Grounded emitter output
characteristics (I)
0.4
4
8
1.20
2
6
10
0.8 1.6 2.0
3.5µA
7.0
10.5
14.0
17.5
21.0
24.5
28.0
31.5
I
B
=0
Ta=25˚C35.0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO MITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics (II)
40
80
53421
20
60
100
0I
B
=0
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
50µA
100
150
200
250
500
450
400
350
300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
0.2 0.5 12510 20 50 100
DC CURRENT GAIN : h
FE
Ta=25˚CV
CE
=5V
3V
1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
0.2 0.5 12510 20 50100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
V
CE
=6V
Ta=100˚C
40˚C
25˚C
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
0.1
0.2 0.5 12510 20 50 100
1
0.5
0.2
0.05
Ta=25˚C
COLLECTOR CURRENT : I
C
(
mA)
I
C
/I
B
=
50
20
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
0.1
0.2 0.5 12510 20 50 100
1
0.5
0.2
0.05
COLLECTOR CURRENT : I
C
(
mA)
l
C
/l
B
=10
Ta=100˚C
25˚C
40˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.8 Gain bandwidth product vs.
emitter current
50 1000.5 20
50
100
200
500
1000
12 510
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25˚C
V
CE
=
12V
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
0.5 20
2
5
10
12510
20
Cib
Cob
Ta=25˚C
f=1MHz
I
E
=
0A
I
C
=
0A
L2SA1774*T1-2/3
LESHAN RADIO COMPANY, LTD.
L2SA1774*T1
G
M
0.08 (0.003) X
D3 PL
J
-X-
-Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
A
B
Y
12
3
N
2 PL
K
C
-T- SEATING
PLANE
DIM
A
MIN NOM MIN NOM
INCHES
1.50 1.60 1.70 0.059
MILLIMETERS
B0.75 0.85 0.95 0.030
C0.60 0.70 0.80 0.024
D0.23 0.28 0.33 0.009
G0.50 BSC
H0.53 REF
J0.10 0.15 0.20 0.004
K0.30 0.40 0.50 0.012
L1.10 REF
M−−− −−− 10 −−−
N−−− −−− 10 −−−
S1.50 1.60 1.70 0.059
0.063 0.067
0.034 0.040
0.028 0.031
0.011 0.013
0.020 BSC
0.021 REF
0.006 0.008
0.016 0.020
0.043 REF
−−− 10
−−− 10
0.063 0.067
MAX MAX
M
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
S
LESHAN RADIO COMPANY, LTD.
L2SA1774*T1
L2SA1774*T1-3/3
SC
-
89