RGP10A thru RGP10M Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Fast Switching Rectifier DO-204AL (DO-41) 1.0 (25.4) MIN. *Features d e t n e t a P 0.107 (2.7) 0.080 (2.0) DIA. * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * For use in high frequency rectifier circuits * Fast switching for high efficiency * 1.0 Ampere operation at TA=55C with no thermal runaway * Typical IR less than 0.1A * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Dimensions in inches and (millimeters) 0.205 (5.2) 0.160 (4.1) *Glass-plastic encap(R) 1.0 (25.4) MIN. sulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Mechanical Data Case: JEDEC DO-204AL molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g 0.034 (0.86) 0.028 (0.71) DIA. NOTE: Lead diameter is 0.026 (0.66) 0.023 (0.58) Reverse Voltage 50 to 1000V Forward Current 1.0A for suffix "E" part numbers Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Symbol RGP 10A RGP 10B RGP 10D RGP 10G RGP 10J RGP 10K RGP 10M Unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55C IF(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Maximum full load reverse current, full cycle average 0.375" (9.5mm) lead length TA=55C IR(AV) 100 A RJA 55 C/W TJ, TSTG -65 to +175 C Parameter Typical thermal resistance (NOTE 1) Operating junction and storage temperature range Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol RGP 10A RGP 10B RGP 10D RGP 10G RGP 10J RGP 10K RGP 10M Unit Maximum instantaneous forward voltage at 1.0A VF 1.3 V Maximum DC reverse current at rated DC blocking voltage IR 5.0 200 A TA=25C TA=150C Maximum reverse recovery time IF=0.5A, IR=1.0A, Irr=0.25A trr Typical junction capacitance at 4.0V, 1MHz CJ 150 250 15 500 ns pF Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted Document Number 88700 28-Feb-02 www.vishay.com 1 RGP10A thru RGP10M Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 30 1.0 0.75 0.5 0.25 0 25 75 100 125 150 175 100 10 1 Ambient Temperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics 20 Instantaneous Reverse Current (A) TJ = 25C Pulse Width = 300s 1% Duty Cycle 0.1 0.01 0.4 0.8 1.0 1.4 1.2 1 TJ = 75C 0.1 TJ = 25C 1.6 0 20 40 60 80 Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance TJ = 25C f = 1.0MHZ Vsig = 50mVp-p 10 10 Reverse Voltage (V) www.vishay.com 2 TJ = 125C Instantaneous Forward Voltage (V) 100 1 10 0.01 0.6 100 100 100 Transient Thermal Impedance (CW) Instantaneous Forward Current (A) 10 0 50 1 1 20 0.375" (9.5mm) Lead Length 10 Junction Capacitance (pF) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) Resistive or Inductive Load Forward Surge Current (A) Average Forward Rectified Current (A) Fig. 1 - Forward Current Derating Curve 10 1 0.1 0.01 0.1 1 10 100 t, Pulse Duration (sec.) Document Number 88700 28-Feb-02