MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039) 2N22d9A ELECTRICALCHARACTERISTICS- continual ~A. 25C unlessothewise noted.) Characteristic I Symbol Mln M= -- 0.01 Unit OFFCHARACTERISTICS(continued) CollectorCutoffCument ICBO ~CB = 60 Vdc) @ TA = 150"C ~CB = 60 Vdc) ~dc 10 EmitterCutoffCurrent WEB=4,0 Vdc, IC = O) lEBO -- 0.01 ,$,y+i,$w;$dc `..!,.}.,,, i? ,$,,>. ,J,,. . -.: .:*' " ,:,gp ~,,~1$' ~ DC Cunent Gain(l) (]C = 0.1 tide, VCE = 10 Vdc) hFE 50 (IC = 1.0 mAdc,VCE = 10 Vdc) 75 (IC = 10 ~dc, VCE = 10Vdc) . >~, ;l,: \%.:.' ~. ,\*., ~\-'.>~:*w .,F t(i)!%`$:~~ .,.> ,.-,~ $ ..!.:! $.~ %:~+% +?* ,,i;. ~ 325 100 .T$:;:*y-- `!1 ~i,, "'~>,.~$' lqp.. ,.. 30.$: ,..?'~-.$. (!C = 150rnAdc,VCE = 10 Vdc) ([C = 500 mAdc,VCE = 10 Vdc)(l) (1c-10 tide, VCE = 10VdC, TA. +C) ,,$.a$:q$% Collector-EmitterSaturationVobge(l) (1C= 150mAdc,IB = 15 rnAdc) -- 300 -- -- Vdc 0.3 (!C = 500 ~dC, iB = w W*) -- 1.0 SaturationVoltage(l) (iC=150tidC,1B= 15~&) 0.6 1.2 -- 2.0 -- 8.0 pF 25 pF Bas+mitter Vdc (IC = 500 ~dC, IB .50 tidC) SMALL41GNAL CHARACTERISTICS ,;$, ,! .. ,,<+':' output Capacitance~CB = 10 Vti, f -0.1 to 1.0 M~z$;,, `**V cob InputCapacitanceWEB = 0.5 Vdc, f. 0.1 to 1.0 q~ CurrentGain ([C=l.o~dC, vCE=lovdC, f=l.o SmalNgnd CumentTransferRatio:$*n~& ([c =20 tide, vCE = 20 Vdc, f qfb~,MZ) SWITCHINGCHARACTERIS_{~ WCC= ~ V*. IC -150 *$&J L ,*!. `*{,3, es:<.\.*:<2~, ,r.,.-. >"*rit. ~.~ ~ Tu~n ~me Tuti ~me :, `~+,.~' ... ~p~~$. ,},..ii:t:~~>i$ .,,, >. ." Y -- be Ihfel 75 -- 2.5 12 Rgure4) 15 mAdc) t(on) 35 ns t(o~ 300 ns COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA 2N2219A PACWGE DIMENSIONS L ~j$&~.,:,,}'1!,,?*:'" ..,,.,. `.\ ,> .~~.~. v Motorolameerv~,~~g~~ tiec~gwtibtifufiher -may~dti herein. Motorola makes nowerra~r repreeerrtationwgu~ee regarding the suitability @~for any particular purpose, nor ~ Motorola assume any fi~fity afising out of the application or use of any _ or ciwt, andx~'w~msanyanddl Iiabfllty,incfudirrgwNhoutllmifationm~ue~d orlm.dentafdamagee. Typi@ pamnteteramand dovarylndifferent epphcati~. ~~refing parameters, incfuding Typicef# must be Vefidated for each customer application by customer's twhnW experts. Motorola does not ~,w~%~u~e under Nepatent tights nor the dghte of others. Motorola products are not designed, intended, or authorized for use as components in ays~Q@~M for surg.@ imdant into the ~, or other appflcations intended to euppoti or sustain life, or for any other app~ition in whi~ the failure of tQe w,m~h product could create a sNuationwhere pereoti injury or death may occur. ShouldBuyer purchase or use Motomfa prod~ for any wh Woruna~horiz~@icafion. Buyersh~lindamnlfy andhld Motorola and Mofi=rs, employ-, subsidarfes,atiliatee,anddiatributomhmlw awn~ all claims, costs, tiages, end expenses, and reasonable attorney fees tising oti of, dir~ly or indirectly any cfaim of personaf injury or death aahafed wit uch unintended or unauthorized use, even if such claim allegeethat Motorola was negligent regarding the Wgn or manufacture of the part. Motorola and 8 are registerd tmdemarks of Motorola Inc. Motorola, Im. is an EqW Opportunity/Affirm~ve Ation Empfoyer. Lftemture Dletrfbutlorr Qntem USA Motorola Literature Distribution; P.O.Box 2W1Z Phoenix, Arizona S5DW. EUROPE: Motorola Ltd.; European Merature OentrWSSTanners Drive, Blakelande, MNtonKeynes, MK14 5BP, England. JAPAN Nippon Motorola Ltd.; H2-1, Nlshffiom, Shinagawa+u, Tokyo 141, Japan. ASIA PACIFIC Motorola Semimnductors H.K. Ltd.; Silicon H~ur Oenfer, No. 2 Dai King Street, T# Po Induetrfd Estate, Tai Po, N.T., Hong Kong. ,@ M-ROLA 1PH~4101 1-2 PRINTED IN USA #W MPWPOD CPTO YDACAA 2N2219AJAN/D llllllllllllllllllllllllllllllllllllllllllllllllllllll IllIll