BSR14 NPN General Purpose Amplifier Features * This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. * Sourced from Process 19. * See BCW65C for characteristics. C E SOT-23 B Mark:U8 Absolute Maximum Ratings* Symbol Ta = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 6.0 V Collector Current - Continuous 800 mA -55 to +150 C IC TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA Ta = 25C unless otherwise noted Max. Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Units *BSR14 350 2.8 mW mW/C 357 C/W * Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. (c) 2012 Fairchild Semiconductor Corporation BSR14 Rev. B0 www.fairchildsemi.com 1 BSR14 -- NPN General Purpose Amplifier September 2012 Symbol Ta = 25C unless otherwise noted Parameter Test Condition Min. Max. Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10A, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage IC = 10A, IE = 0 75 V IE = 10A, IC = 0 6.0 V ICBO Collector-Cutoff Current VCB = 60V, VCB = 60V, Ta = 150C 10 10 nA A ICEX Collector-Cutoff Current VCE = 60V, VEB = 3.0V 10 nA IBEX Reverse Base Current VCE = 60V, VEB = 3.0V 20 nA IEBO Emitter-Cutoff Current VEB = 3.0V, IC = 0 15 nA ON CHARACTERISTICS hFE DC Current Gain IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 10V 35 50 75 100 50 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 0.6 Current Gain - Bandwidth Product IC = 20mA, VCE = 20V, f = 100mHz 300 Collector-Base Capacitance VCB = 10V, IE = 0, f = 1.0MHz hie Input Impedance VCE = 10V, IC = 1.0mA, f = 1.0kHz hfe Small-Signal Current Gain hoe Output Admittance 300 0.3 1.0 V V 1.2 2.0 V V SMALL SIGNAL CHARACTERISTICS fT CCB MHz 8.0 pF 2.0 8.0 k VCE = 10V, IC = 1.0mA, f = 1.0kHz 50 300 VCE = 10V, IC = 1.0mA, f = 1.0kHz 5 35 S 10 ns 25 ns 225 ns 60 ns SWITCHING CHARACTERISTICS td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = 30V, VBE(OFF) = 0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Spice Model NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10) (c) 2012 Fairchild Semiconductor Corporation BSR14 Rev. 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