SN7002NH6433XTMA1 - INFINEON TECHNOLOGIES AG

2011-07-11

Rev. 2.6 Page 1

SN7002N

SIPMOS Small-Signal-Transistor Product Summary

VDS 60 V

RDS(on) 5Ω

ID0.2 A

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

PG-SOT-23

Gate

pin1

Drain

pin 3

Source

pin 2

Marking

sSN

Type Package Pb-free Tape and Reel Information

SN7002N PG-SOT-23 Yes H6327: 3000 pcs/reel

SN7002N

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

TA=70°C

ID

0.2

0.16

A

Pulsed drain current

TA=25°C

ID puls 0.8

Reverse diode dv/dt

IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C

dv/dt6kV/µs

Gate source voltage VGS ±20 V

ESD Class (JESD22-A114-HBM) 0 (<250V)

Power dissipation

TA=25°C

Ptot 0.36 W

Operating and storage temperature Tj , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

PG-SOT-23 H6433: 10000 pcs/reel sSN

Yes

• Qualified according to AEC Q101

• Halogen-free according to IEC61249-2-21

2011-07-11

Rev. 2.6 Page 2

SN7002N

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - ambient

at minimal footprint

RthJA - - 350 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

V(BR)DSS 60 - - V

Gate threshold voltage, VGS = VDS

ID=26µA

VGS(th) 0.8 1.4 1.8

Zero gate voltage drain current

VDS=60V, VGS=0, Tj=25°C

VDS=60V, VGS=0, Tj=150°C

IDSS

-

0.1

5

µA

Gate-source leakage current

VGS=20V, VDS=0

IGSS - - 10 nA

Drain-source on-state resistance

VGS=4.5V, ID=0.17A

RDS(on) -3.9 7.5 Ω

Drain-source on-state resistance

VGS=10V, ID=0.5A

RDS(on) -2.5 5

2011-07-11

Rev. 2.6 Page 3

SN7002N

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=0.16A

0.09 0.17 -S

Input capacitance Ciss VGS=0, VDS=25V,

f=1MHz

-34 45 pF

Output capacitance Coss -7.2 9.6

Reverse transfer capacitance Crss -2.8 4.2

Turn-on delay time td(on) VDD=30V, VGS=10V,

ID=0.5A, RG=6Ω

-2.4 3.6 ns

Rise time tr-3.2 4.8

Turn-off delay time td(off) -5.3 8

Fall time tf-3.6 5.4

Gate Charge Characteristics

Gate to source charge Qgs VDD=48V, ID=0.5A -0.14 0.21 nC

Gate to drain charge Qgd -0.42 0.63

Gate charge total QgVDD=48V, ID=0.5A,

VGS=0 to 10V

-11.5

Gate plateau voltage V(plateau) VDD=48V, ID = 0.5 A -4.5 -V

Reverse Diode

Inverse diode continuous

forward current

ISTA=25°C - - 0.2 A

Inv. diode direct current, pulsedISM - - 0.8

Inverse diode forward voltage VSD VGS=0, IF = IS-0.83 1.2 V

Reverse recovery time trr VR=30V, IF=lS,

diF/dt=100A/µs

-14.2 21.3 ns

Reverse recovery charge Qrr -5.9 8.8 nC

2011-07-11

Rev. 2.6 Page 4

SN7002N

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

TA

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

0.32

W

0.38 SN7002N

Ptot

2 Drain current

ID = f (TA)

parameter: VGS≥ 10 V

0 20 40 60 80 100 120 °C 160

TA

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

A

0.22 SN7002N

ID

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

10 0 10 1 10 2

VVDS

-3

10

-2

10

-1

10

0

10

1

10

A

SN7002N

ID

R DS(on) = V DS / I D

DC

10 ms

1 ms

tp = 200.0µs

4 Transient thermal impedance

ZthJA = f (tp)

parameter : D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

K/W

SN7002N

ZthJA

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

2011-07-11

Rev. 2.6 Page 5

SN7002N

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj = 25 °C, VGS

00.5 11.5 22.5 33.5 4V5

VDS

0

0.125

0.25

0.375

0.5

0.625

0.75

A

1

ID

10V

7V

6V

5V

4.5V

4.0V

3.7V

3.5V

3.0V

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: Tj = 25 °C, VGS

00.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A1

ID

0

0.75

1.5

2.25

3

3.75

4.5

5.25

6

Ω

7.5

RDS(on)

3.1V

3.5V

3.7V

4.1V

4.5V

5V

6V

7V

10V

7 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: Tj = 25 °C

00.8 1.6 2.4 3.2 44.8 V6

VGS

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

A

1

ID

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

00.2 0.4 0.6 0.8 A1.1

ID

0

0.05

0.1

0.15

0.2

0.25

0.3

S

0.4

gfs

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Rev. 2.6 Page 6

SN7002N

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 0.5 A, VGS = 10 V

-60 -20 20 60 100 °C 180

Tj

0

1

2

3

4

5

6

7

8

9

10

11

12

Ω

15

SN7002N

RDS(on)

typ

98%

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS; ID =26µA

-60 -20 20 60 100 °C 160

Tj

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

V

2.2

VGS(th)

2%

typ.

98%

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz, Tj = 25 °C

0 5 10 15 20 V30

VDS

0

10

1

10

2

10

pF

C

Ciss

Coss

Crss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: Tj

00.4 0.8 1.2 1.6 22.4 V3

VSD

-3

10

-2

10

-1

10

0

10

A

SN7002N

IF

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

2011-07-11

Rev. 2.6 Page 7

SN7002N

13 Typ. gate charge

VGS = f (QG); parameter: VDS ,

ID = 0.2 A pulsed, Tj = 25 °C

00.4 0.8 1.2 1.6 2nC 2.8

QG

0

2

4

6

8

10

12

V

16 SN7002N

VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-60 -20 20 60 100 °C 180

Tj

54

56

58

60

62

64

66

68

V

72

SN7002N

V(BR)DSS

SOT23

Package Outline:

Footprint: Packaging:

Dimensions in mm

Rev 2.6 page 8 2011-07-11

SN7002N

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev 2.6 page 9 2011-07-11

SN7002N