NCD57000 Isolated High Current IGBT Gate Driver NCD57000 is a high-current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, soft turn-off at DESAT, and separate high and low (OUTH and OUTL) driver outputs for system design convenience. NCD57000 accommodates both 5 V and 3.3 V signals on the input side and wide bias voltage range on the driver side including negative voltage capability. NCD57000 provides > 5 kVrms (UL1577 rating) galvanic isolation and > 1200 Viorm (working voltage) capabilities. NCD57000 is available in the wide-body SOIC-16 package with guaranteed 8 mm creepage distance between input and output to fulfill reinforced safety insulation requirements. MARKING DIAGRAM Features 16 * * * * * * * * * * * * * * * * * * High Current Output (+4/-6 A) at IGBT Miller Plateau Voltages Low Output Impedance for Enhanced IGBT Driving Short Propagation Delays with Accurate Matching Active Miller Clamp to Prevent Spurious Gate Turn-on DESAT Protection with Programmable Delay Negative Voltage (Down to -9 V) Capability for DESAT Soft Turn Off During IGBT Short Circuit IGBT Gate Clamping During Short Circuit IGBT Gate Active Pull Down Tight UVLO Thresholds for Bias Flexibility Wide Bias Voltage Range including Negative VEE2 3.3 V to 5 V Input Supply Voltage Designed for AEC-Q100 Certification 5000 V Galvanic Isolation (to meet UL1577 Requirements) 1200 V Working Voltage (per VDE0884-11 Requirements) High Transient Immunity High Electromagnetic Immunity These Devices are Pb-Free, Halogen Free and are RoHS Compliant Typical Applications * * * * * Solar Inverters Motor Control Uninterruptible Power Supplies (UPS) Industrial Power Supplies Welding www.onsemi.com 1 SOIC-16 WB CASE 751G-03 XXXXXXXXXXX XXXXXXXXXXX AWLYYWWG 1 XXXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. PIN ASSIGNMENT VEE2A GND1 DESAT VDD1 GND2 RST OUTH FLT VDD2 RDY OUTL IN- CLAMP IN+ VEE2 GND1A ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. (c) Semiconductor Components Industries, LLC, 2018 February, 2019 - Rev. 2 1 Publication Order Number: NCD57000/D NCD57000 VDD1 VDD1 VDD2 UVLO1 UVLO2 + V CLAMP-THR - IN- CLAMP IN+ VEE2 STO VDD1 OUTL RDY Logic Logic OUTH 1 VDD2 I DESAT-CHG VDD1 + RST DESAT - VDD1 V DESAT-THR FLT GND1 2 1 GND1A VEE2 Figure 1. Simplified Block Diagram V1 +V2 VDD1 VDD2 IN+ DESAT IN- OUTH RDY OUTL FLT CLAMP RST VEE2 GND1 GND2 GND1 GND2 -V3 Figure 2. Simplified Application Schematics www.onsemi.com 2 VEE2A GND2 NCD57000 PIN DESCRIPTION AAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAA AAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAA AAAA AAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Pin Name No. I/O Description VEE2A 1 Power VEE2 8 Output side negative power supply. A good quality bypassing capacitor is required from these pins to GND2 and should be placed close to the pins for best results. Connect it to GND2 for unipolar supply application. DESAT 2 I/O Input for detecting the desaturation of IGBT due to a short circuit condition. An internal constant current source IDESAT-CHG charging an external capacitor connected to this pin allows a programmable blanking delay every ON cycle before DESAT fault is processed, thus preventing false triggering. When the DESAT voltage goes up and reaches VDESAT-THR, the output is driven low. Further, the /FLT output is activated, please refer to Figure 5 on page 9. GND2 3 Power OUTH 4 O Driver high output that provides the appropriate drive voltage and source current to the IGBT/FET gate. VDD2 5 Power Output side positive power supply. The operating range for this pin is from UVLO2 to its maximum allowed value. A good quality bypassing capacitor is required from this pin to GND2 and should be placed close to the pins for best results. OUTL 6 O Driver low output that provides the appropriate drive voltage and sink current to the IGBT/FET gate. OUTL is actively pulled low during start-up and under Fault conditions. CLAMP 7 I/O Provides clamping for the IGBT/FET gate during the off period to protect it from parasitic turn-on. Its internal N FET is turned on when the voltage of this pin falls below VEE2 + VCLAMP-THR. It is to be tied directly to IGBT/FET gate with minimum trace length for best results. GND1A 9 Power GND1 16 IN+ 10 I Non inverted gate driver input. It is internally clamped to VDD1 and has a pull-down resistor of 50 kW to ensure that output is low in the absence of an input signal. A minimum positive going pulse-width is required at IN+ before OUTH/OUTL respond. IN- 11 I Inverted gate driver input. It is internally clamped to VDD1 and has a pull-up resistor of 50 kW to ensure that output is low in the absence of an input signal. A minimum negative going pulse-width is required at IN- before OUTH/OUTL respond. RDY 12 O Power good indication output, active high when VDD1 and VDD2 are both good. There is an internal 50 kW pull-up resistor connected to this pin. Multiple of them from different drivers can be "OR"ed together. OUTH/OUTL remain low when RDY is low. Short time delays may apply. See Figure 4 on page 8 for details. /FLT 13 O Fault output (active low) that allows communication to the main controller that the driver has encountered a desaturation condition and has deactivated the output. There is an internal 50 kW pull-up resistor connected to this pin. Multiple of them from different drivers can be "OR"ed together. /RST 14 I Reset input with an internal 50 kW pull-up resistor, active low to reset fault latch. VDD1 15 Power A 5 ms mute time apply to IN+ and IN- once DESAT occurs. Output side gate drive reference connecting to IGBT emitter or FET source. Input side ground reference. Input side power supply (3.3 V to 5 V). www.onsemi.com 3 NCD57000 ABSOLUTE MAXIMUM RATINGS (Over operating free-air temperature range unless otherwise noted) (Note 1) Symbol Minimum Maximum Unit VDD1-GND1 Supply voltage, input side -0.3 6 V VDD2-GND2 Positive Power Supply, output side -0.3 25 V VEE2-GND2 Negative Power Supply, output side -10 0.3 V 0 25 V VDD2-VEE2 (VMAX2) Parameter Differential Power Supply, output side VOUTH Positive gate-driver output voltage VEE2 - 0.3 VDD2 + 0.3 V VOUTL Negative gate-driver output voltage VEE2 - 0.3 VDD2 + 0.3 V IPK-SRC Gate-driver output sourcing current (maximum pulse width = 10 ms, maximum duty cycle = 0.2%, VMAX2 = 23 V) - 7.8 A IPK-SNK Gate-driver output sinking current (maximum pulse width = 10 ms, maximum duty cycle = 0.2%, VMAX2 = 23 V) - 7.1 A Clamp sinking current (maximum pulse width = 10 ms, maximum duty cycle = 0.2%, VCLAMP = 2.5 V) - 2.5 A Maximum Short Circuit Clamping Time (IOUTH_CLAMP = 500 mA) - 10 ms -0.3 VDD1 + 0.3 V - 10 mA IPK-CLAMP tCLP VLIM-GND1 Voltage at IN+, IN-, /RST, /FLT, RDY ILIM-GND1 Output current of /FLT, RDY VDESAT-GND2 Desat Voltage (Note 2) VCLAMP-GND2 Clamp Voltage PD -9 VDD2 + 0.3 V VEE2 - 0.3 VDD2 + 0.3 V - 1400 mW Power Dissipation (Note 3) VISO Input to Output Isolation Voltage -1200 1200 V TJ(max) Maximum Junction Temperature -40 150 C Storage Temperature Range -65 150 C TSTG ESDHBM ESD Capability, Human Body Model (Note 4) - 2 kV ESDCDM ESD Capability, Charged Device Model (Note 4) - 2 kV MSL Moisture Sensitivity Level - 2 - TSLD Lead Temperature Soldering Reflow, Pb-Free Versions (Note 5) - 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. The minimum value is verified by characterization with a single pulse of 100 mA for 100 ms. 3. The value is estimated for ambient temperature 25C and junction temperature 150C, 650 mm2, 1 oz copper, 2 surface layers and 2 internal power plane layers. Power dissipation is affected by the PCB design and ambient temperature. 4. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114) ESD Charged Device Model tested per AEC-Q100-011 (EIA/JESD22-C101) Latchup Current Maximum Rating: 100 mA per JEDEC standard: JESD78, 25C 5. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. THERMAL CHARACTERISTICS Symbol RqJA Parameter Thermal Resistance, Junction-to-Air Value Unit 100 mm2, 1 oz Copper, 1 Surface Layer Conditions 150 C/W 650 mm2, 1 oz Copper, 2 Surface Layers and 2 Internal Power Plane Layers 84 www.onsemi.com 4 NCD57000 OPERATING RANGES (Note 6) Parameter Symbol Min Max Unit VDD1-GND1 Supply voltage, input side UVLO1 5.5 V VDD2-GND2 Positive Power Supply, output side UVLO2 24 V VEE2-GND2 Negative Power Supply, output side -10 0 V VDD2-VEE2 (VMAX2) Differential Power Supply, output side 0 24 V VIL Low level input voltage at IN+, IN-, /RST 0 0.3 X VDD1 V VIH High level input voltage at IN+, IN-, /RST 0.7 X VDD1 VDD1 V Common Mode Transient Immunity 100 - kV/ms Ambient Temperature -40 125 C |dVISO/dt| TA Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 6. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. ELECTRICAL CHARACTERISTICS (VDD1 = 5 V, VDD2 = 15 V, VEE2 = -8 V. For typical values TA = 25C, for min/max values, TA is the operating ambient temperature range that applies, unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit VOLTAGE SUPPLY VUVLO1-OUT-ON UVLO1 Output Enabled - - 3.05 V VUVLO1-OUT-OFF UVLO1 Output Disabled 2.4 - - V UVLO1 Hysteresis 0.125 - - V VUVLO2-OUT-ON UVLO2 Output Enabled 13.2 13.5 13.8 V VUVLO2-OUT-OFF UVLO2 Output Disabled 12.2 12.5 12.8 V - 1 - 1 2 mA - 4.8 6 mA - 3.3 4 mA - 3.6 4 mA VUVLO1-HYST VUVLO2-HYST IDD1-0 UVLO2 Hysteresis V Input Supply Quiescent Current Output Low IN+ = Low, IN- = Low Input Supply Quiescent Current Output High IN+ = High, IN- = Low Output Positive Supply Quiescent Current, Output Low IN+ = Low, IN- = Low Output Positive Supply Quiescent Current, Output High IN+ = High, IN- = Low IEE2-0 Output Negative Supply Quiescent Current, Output Low IN+ = High, IN- = Low, no load - 0.4 2 mA IEE2-100 Output Negative Supply Quiescent Current, Output High IN+ = High, IN- = Low, no load - 0.2 2 mA IDD1-100 IDD2-0 IDD2-100 RDY = High, /FLT = High RDY = High, /FLT = High RDY = High, /FLT = High, no load RDY = High, /FLT = High, no load LOGIC INPUT AND OUTPUT VIL IN+, IN-, /RST Low Input Voltage - - 0.3 x VDD1 V VIH IN+, IN-, /RST High Input Voltage 0.7 x VDD1 - - V - 0.15 x VDD1 - V VIN-HYST Input Hysteresis Voltage IIN-L, IRST-L IN-, /RST Input Current (50 kW pull-up resistor) VIN-/VRST = 0 V - -100 - mA IN+ Input Current (50 kW pull-down resistor) VIN+ = 5 V - 100 - mA IIN+H www.onsemi.com 5 NCD57000 ELECTRICAL CHARACTERISTICS (VDD1 = 5 V, VDD2 = 15 V, VEE2 = -8 V. For typical values TA = 25C, for min/max values, TA is the operating ambient temperature range that applies, unless otherwise noted) (continued) Symbol Parameter Test Condition Min Typ Max Unit LOGIC INPUT AND OUTPUT IRDY-L, IFLT-L VRDY-L, VFLT-L RDY, /FLT Pull-up Current (50 kW pull-up resistor) VRDY/VFLT = Low - 100 - mA RDY, /FLT Low Level Output Voltage IRDY/IFLT = 5 mA - - 0.3 V tMIN1 Input Pulse Width of IN+, IN- for No Response at Output - - 10 ns tMIN2 Input Pulse Width of IN+, IN- for Guaranteed Response at Output 40 - - ns tRST-MIN Pulse Width of /RST for Resetting /FLT 800 - - ns V DRIVER OUTPUT Output Low State (VOUTL - VEE2) ISINK = 200 mA - 0.1 0.2 ISINK = 1.0 A, TA = 25C - 0.5 0.8 Output High State (VDD2 - VOUTH) ISRC = 200 mA - 0.3 0.5 ISRC = 1.0 A, TA = 25C - 0.8 1 IPK-SNK1 Peak Driver Current, Sink (Note 7) VOUTH = 7.9 V - 7.1 - A IPK-SRC1 Peak Driver Current, Source (Note 7) VOUTL = -5 V - 7.8 - A Clamp Voltage (VCLAMP - VEE2) ICLAMP = 2.5 A, TA = 25C - 1.3 1.7 V ICLAMP = 2.5 A, TA = -40C to 125C - - 2.7 1.5 2 2.5 V VOUTL1 VOUTL3 VOUTH1 VOUTH3 V MILLER CLAMP VCLAMP VCLAMP-THR Clamp Activation Threshold (VCLAMP - VEE2) IGBT SHORT CIRCUIT CLAMPING VCLAMP-OUTH Clamping Voltage, Sourcing (VOUTH - VDD2) IN+ = Low, IN- = High, ICLAMP-OUTH = 500 mA (pulse test, tCLPmax = 10 ms) - 0.9 1 V VCLAMP-OUTL Clamping Voltage, Sinking (VOUTL - VDD2) IN+ = High, IN- = Low, ICLAMP-OUTL = 500 mA (pulse test, tCLPmax = 10 ms) - 1.2 1.5 V VCLAMP-CLAMP Clamping Voltage, Clamp (VCLAMP - VDD2) IN+ = High, IN- = Low, ICLAMP-CLAMP = 500 mA (pulse test, tCLPmax = 10 ms) - 1.4 1.6 V 8.5 9 9.5 V - -8 - V 0.45 0.5 0.6 mA - 50 - mA DESAT PROTECTION VDESAT-THR DESAT Threshold Voltage VDESAT-NEG DESAT Negative Voltage IDESAT = 1.5 mA IDESAT-CHG Blanking Charge Current VDESAT = 7 V IDESAT-DIS Blanking Discharge Current DYNAMIC CHARACTERISTICS tPD-ON IN+, IN- to Output High Propagation Delay CLOAD = 10 nF VIH to 10% of output change for PW > 150 ns. OUTH, OUTL and CLAMP pins are connected together 40 60 90 ns tPD-OFF IN+, IN- to Output Low Propagation Delay CLOAD = 10 nF VIL to 90% of output change for PW > 150 ns. OUTH, OUTL and CLAMP pins are connected together 40 66 90 ns tDISTORT Propagation Delay Distortion (= tPD-ON - tPD-OFF) TA = 25C, PW > 150 ns -15 -6 15 ns TA = -40C to 125C, PW > 150 ns -25 - 25 www.onsemi.com 6 NCD57000 ELECTRICAL CHARACTERISTICS (VDD1 = 5 V, VDD2 = 15 V, VEE2 = -8 V. For typical values TA = 25C, for min/max values, TA is the operating ambient temperature range that applies, unless otherwise noted) (continued) Symbol Parameter Test Condition Min Typ Max Unit -30 0 30 ns DYNAMIC CHARACTERISTICS tDISTORT_TOT Prop Delay Distortion between Parts PW > 150 ns tRISE Rise Time (see Fig. 3) (Note 7) CLOAD = 1 nF, 10% to 90% of Output Change - 10 - ns tFALL Fall Time (see Fig. 3) (Note 7) CLOAD = 1 nF, 90% to 10% of Output Change - 15 - ns tLEB DESAT Leading Edge Blanking Time (See Fig. 5) - 450 - ns DESAT Threshold Filtering Time (see Fig. 5) - 320 - ns CLOAD = 10 nF, RG = 10 W. VEE2 = 0 V - 1.8 - ms CLOAD = 10 nF, RG = 10 W - 2.6 - tFILTER tSTO Soft Turn Off Time (see Fig. 5) tFLT Delay after tFILTER to /FLT - 450 - ns tRST /RST Rise to /FLT Rise Delay - 23 - ns RDY High to Output High Delays (see Fig. 4) - 55 - ns VUVLO2-OUT-OFF to RDY Low Delays (see Fig. 4) - 8 - ms tRDY1O tRDY2O tRDY1F tRDY2F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Values based on design and/or characterization. ORDERING INFORMATION Device Package Type Shipping NCD57000DWR2G SOIC-16 Wide Body (Pb-Free) 1,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 7 NCD57000 VIH VIL IN+ tFALL tRISE tMIN1 90% tPD-ON tMIN1 tPD-OFF OUTH /OUTL 10% tMIN2 tMIN2 Figure 3. Propagation Delay, Rise and Fall Time RDY RDY tRDY2F tRDY1F IN+ IN+ VUVLO2-OUT-ON VUVLO2-OUT-OFF VDD1 VUVLO1-OUT-ON VUVLO1-OUT-OFF VDD2 VUVLO2-OUT-ON tRDY2O OUTH /OUTL VUVLO2-OUT-OFF OUTH /OUTL Figure 4. UVLO Waveform www.onsemi.com 8 tRDY1O NCD57000 IN+ tPD-ON tMUTE tFILTER VOUTH/L tSTO tLEB VEE2 + 2 V VDESAT-THR DESAT tFLT FLT tRST RST tRST-MIN Figure 5. DESAT Response Waveform www.onsemi.com 9 NCD57000 TYPICAL CHARACTERISTICS (Conditions for the following figures are the same as stated for ELECTRICAL CHARACTERISTICS Table unless otherwise noted. Typical and/or average values are used.) 6.0 6.0 5.0 5.0 4.0 IDD2 (mA) IDD1 (mA) 4.0 VDD1 = 5 V, IN+ = Low, IN- = LOW VDD1 = 5 V, IN+ = High, IN- = LOW VDD1 = 3.3 V, IN+ = Low, IN- = LOW VDD1 = 3.3 V, IN+ = High, IN- = LOW 3.0 2.0 3.0 2.0 VDD2 = 15 V, IN+ = Low, IN- = LOW VDD2 = 15 V, IN+ = 1 MHz, IN- = LOW VDD2 = 15 V, IN+ = High, IN- = LOW 1.0 1.0 0.0 0.0 -40 -20 0 20 40 60 Temperature (5C) 80 100 -40 120 -20 0.5 5.0 0.4 4.0 VEE2 = -8 V, IN+ = Low, IN- = LOW VEE2 = -8 V, IN+ = High, IN- = LOW 0.3 0.2 0.1 0.0 80 100 120 3.0 2.0 IDD1, VDD1 = 5 V IDD2, VDD2 = 15 V IEE2, VEE2 = -8 V 1.0 0.0 -1.0 -40 -20 0 20 40 60 80 100 120 0 100 200 300 Input Frequency (kHz) Temperature (5C) Figure 8. VEE2 Supply Current 400 500 Figure 9. Supply Current vs Frequency 14.0 3.0 VUVLO1-OUT-ON 2.9 VUVLO1-OUT-OFF 13.5 UVLO2 (V) UVLO1 (V) 20 40 60 Temperature (5C) Figure 7. VDD2 Supply Current Supply Current (mA) IEE2 (mA) Figure 6. VDD1 Supply Current 0 2.8 2.7 VUVLO2-OUT-ON VUVLO2-OUT-OFF 13.0 12.5 2.6 12.0 2.5 -40 -20 0 20 40 60 Temperature (5C) 80 100 -40 120 -20 0 20 40 60 80 100 Temperature (5C) Figure 10. UVLO1 Threshold Voltage Figure 11. UVLO2 Threshold Voltage www.onsemi.com 10 120 NCD57000 TYPICAL CHARACTERISTICS (Conditions for the following figures are the same as stated for ELECTRICAL CHARACTERISTICS Table unless otherwise noted. Typical and/or average values are used.) (continued) 2.0 2.0 VOUTH (0.2 A) VEE2 = -8 V VOUTH (1 A) VEE2 = -8 V VOUTL (0.2 A) VEE2 = -8 V VOUTL (1 A) VEE2 = -8 V 1.5 VOUTL (V) VOUTH (V) 1.5 1.0 0.5 1.0 0.5 0.0 0.0 -40 -20 0 20 40 60 Temperature (5C) 80 100 120 -40 Figure 12. Output Voltage Drop, Sourcing 20 40 60 Temperature (5C) 80 100 120 2.0 VCLAMP (2.5 A) VEE2 = -8 V 2.0 1.5 VCLAMP- (V) CLAMP Voltage (V) 0 Figure 13. Output Voltage Drop, Sinking 2.5 1.5 1.0 1.0 VCLAMP-OUTH (0.5 A) VEE2 = -8 V VCLAMP-OUTL (0.5 A) VEE2 = -8 V VCLAMP-CLAMP (0.5 A) VEE2 = -8 V 0.5 0.5 0.0 0.0 -40 -20 0 20 40 60 80 Temperature (5C) 100 -40 120 Figure 14. CLAMP Voltage Drop -20 0 20 40 60 Temperature (5C) 80 100 120 Figure 15. IGBT Short Circuit Clamp Voltage Drop 90 40 70 60 50 40 -40 -20 0 tRISE,VEE2 = -8 V tFALL,VEE2 = -8 V tRISE,VEE2 = 0 V tFALL,VEE2 = 0 V 35 tPD-ON tPD-OFF 80 Rise and Fall Time (ns) Propagation Delay (ns) -20 20 40 60 Temperature (5C) 80 100 30 25 20 15 10 5 0 -40 120 Figure 16. Propagation Delay -20 0 20 40 60 Temperature (5C) 80 Figure 17. Rise and Fall Time www.onsemi.com 11 100 120 NCD57000 Soft Turn Off Time (ms) 4.0 tSTO,VEE2 = -8 V tSTO,VEE2 = 0 V 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 Temperature (5C) 80 Figure 18. Soft Turn Off Time www.onsemi.com 12 100 120 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC-16 WB CASE 751G-03 ISSUE D DATE 12 FEB 2013 1 SCALE 1:1 A D 9 1 8 h X 45 _ H E 0.25 8X M B M 16 q 16X B B M MILLIMETERS DIM MIN MAX A 2.35 2.65 A1 0.10 0.25 B 0.35 0.49 C 0.23 0.32 D 10.15 10.45 E 7.40 7.60 e 1.27 BSC H 10.05 10.55 h 0.25 0.75 L 0.50 0.90 q 0_ 7_ T A S B S L A 0.25 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INLCUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. e A1 14X C T SEATING PLANE GENERIC MARKING DIAGRAM* 16 SOLDERING FOOTPRINT 16X XXXXXXXXXXX XXXXXXXXXXX AWLYYWWG 0.58 1 11.00 1 16X 1.27 PITCH 1.62 DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98ASB42567B SOIC-16 WB XXXXX A WL YY WW G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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