SIEMENS Silicon Schottky Diodes @ For mixer applications in the VHF/UHF range @ For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! BAT 68 ... VPSO5161 Type Marking Ordering Code | Pin Configuration Package) (tape and reel) BAT 68 83 Q62702-A926 ' 3 | SOT-23 o>}__ HA07002 BAT 68-04 84 Q62702-A4 3 { fp F 2 HaA07005 BAT 68-05 85 Q62702-A15 3 1 B | 4 2 HAO7004 BAT 68-06 86 Q62702-A19 3 1 4 F 2 EHAO7006 1) For detailed information see chapter Package Outlines. Semiconductor Group 312 02.96 SIEMENS BAT 68... @ For mixer applications in the VHF/UHF range @ For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code | Pin Configuration Package") (tape and reel) BAT 68-07 87 Q62702-A44 4 I 1 | SOT-143 3 DI 2 EHA07008 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage Va 8 Vv Forward current Ir 130 mA Power dissipation, 7s < 60 C Prot 150 mw Junction temperature Tj 150 Cc Storage temperature range Tstg - 55... + 150 Thermal Resistance Junction - ambient?) Rivaa < 750 KW Junction - soldering point Rinas < 590 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 313 SIEMENS BAT 68 ... Electrical Characteristics per Diode at Ts = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. max. Breakdown voltage Ver 8 - ~ Vv la=10pA Reverse current Jr pA Va=1V - - 0.1 Va=1V, Ts = 60C - - 1.2 Forward voitage ) Ve mV le= 1mA - - 340 le=10MA - - 500 Diode capacitance Cr - - 1 pF Va = 0, f= 1 MHz Differential forward resistance n - - 10 Q Ir =5 mA, f= 10 kHz 1) Forward voltage matching, types -04, -05, -06, -07 JF = 10 mA, AVF = 20 mV max. Semiconductor Group 314 SIEMENS BAT 68... Forward current Ir =f (Vr) Forward current Ir = f (7s, Ta*) *Package mounted on alumina BAT 68-04, -05, -06, -07 192 BATS. HDO7101 200 BAY 8. EHDO7105 mm ~" mA a h=-40 10 25C 10 107! 1072 0.0 O01 0.2 03 O04 O5V06 Forward current Jr = f (1s; Ta*) "Package mounted on alumina BAT 68 200 Bat HOO7122 mA 160 140 120 100 80 60 40 20 0 50 100 150 Til Semiconductor Group fF ooomA 160 140 120 100 80 60 40 20 Q 30 100 Cs450 e Til, Reverse current In = f (Va) 107 SAT 6B... HD07 102 tom = UA 10! ie 10 197" 197? 1078 315 SIEMENS BAT 68 ... Diode capacitance Cr =f (Vr) Differential forward resistance rt = f (Ir) f=1MHz f= 10 kHz BAT 6 1.0 ae oe ____ HB07103 103 BAT 68... EhOO7104 a fog | | _ 0.50 be - soe po i : 10! he . ' f I - 7 boo 9 1.0 2.0 3.0 V 4.0 1071 10 10 mA 102 Semiconductor Group 316