T4-LDS-0240, Rev. 1 (112022) ©2011 M i crosemi C or poration Page 1 of 5
1N4678-1 th r u 1N47 1 7-1
Available on
commercial
versions 500 mW AXIAL-LEADED Z ENER DIODES
Screeni ng in
reference to
MIL-PRF-19500
available
DESCRIPTION
The 1N4678-1 t hr u 1N 4 717-1 series of 0.5 watt Zener voltage regul ator s provides a selec ti on
from 1.8 t o 43 volt s in s tandar d 5% toler ances as well as ti ghter tol er ances. Th ese axial-
leaded g lass DO-35 Zener s are available wit h an int er nal metallurgi cal bond s imi l ar to mi l itary
requirements for similar Zeners . M ic r osemi also offers numer ous other Zener products to
meet higher and low er power appli cati ons.
DO-35 (DO-204AH)
Package
Also available in:
DO-213AA
(s urf ace mount)
1N4678UR-1 – 1N4717UR-1
Important: For the latest information, visi t our website http://www.microsemi.com.
FEATURES
JEDEC registered 1N4678 thru 1N4717 series.
Internal metallurgi cal bond.
Tighter voltage tolerances of 2% and 1% are available.
Up-screening available in reference to MIL-PRF-19500.
(See part nomenclature for all available options).
RoHS compliant devices available (commercial grade only).
APPLICATIONS / BENE FITS
Regulates voltage over a broad operating current and temperature range.
Guaranteed maximum voltage regulation 10 μA to 100 μA.
Voltage selection from 1.8 to 43 V.
Flexible axial-lead mounting terminals.
Non-sensitive to ESD per MIL-STD-750 method 1020.
Minimal capacitance (see Figure 3).
Inherently radiati on hard as described in Microsemi ’sMicroNote 050”.
MAXI MUM RATING S
MSCLawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSCIreland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-Lead (1)
RӨJL
250
oC/W
Thermal Resistance Junction-to-Ambient (2)
RӨJA
310
oC/W
Steady-State Power Dissipation (3)
PD
0.5
W
Forward Voltage @ 200 mA
VF
1.1
V
Solder Temperature @ 10 s
TSP
260
oC
Notes: 1. At 3 /8 (10 mm ) lead le ngt h f ro m body.
2. When mounted on FR4 PC board (1 oz Cu) with 4 mm2 copper pads and track width 1 mm, length 25 mm.
3. At TL < 50 oC 3/8 inch (10 mm) from body or 0.48 W at TA < 25 ºC w he n mount ed on FR4 PC boa rd as
described for thermal resistance (see Figure 2 for derating).
T4-LDS-0240, Rev. 1 (112022) ©2011 Microsemi C or poration Page 2 of 5
1N4678-1 th r u 1N47 1 7-1
M ECHANICAL and PACKAGING
CASE: Hermetically sealed axial-lead glass DO-35 (DO-204AH) package.
TERMINALS: Leads tin-lead plated or RoHS compliant matte-tin plating available (on commercial grade only) solderable per
MIL-STD-750, method 2026.
POLARITY: Cathode indicated by band where diode is to be operated with the banded end positive with respect to the opposite
end for Zener regulation.
MARKING: Part number.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: 0.2 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
MQ 1N4678 C -1 (e3)
Reliability Level
MQ = JAN Level
MX = JANTX Level
MV = JANTXV Level
MSP = JANS Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Metallurgically Bonded
Zener Voltage Tolerances
Blank = 5%
C = 2%
D = 1%
SYMBOL S & DE F INIT IONS
Symbol
Definition
IZT or IZK
Regulator Current: The dc regulator current (IZ), at a speci fied test point (IZT), near breakdown knee (IZK).
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZM
Maximum Regulator (Zener) Current: The maximum rated dc c urrent for the specified power rating.
TSP
Temperature Solder Pad: The maximum solder tem perature that can be safely applied to the terminal.
VR
Reverse Voltage: The reverse voltage dc value, no alternating com ponent.
VZ
Zener Voltage: The Zener voltage the device will exhibit at a specified current (I
Z
) in its breakdown region.
T4-LDS-0240, Rev. 1 (112022) ©2011 Microsemi C or poration Page 3 of 5
1N4678-1 th r u 1N47 1 7-1
ELECTRICAL CHARACTERI STICS @ 25 oC unles s other wis e not ed.
JEDEC TYPE
NUMBER
(Note 1)
NOMINAL
ZENER
VOLTAGE
(Note 3)
ZENER TEST
CURRENT
MAXIMUM
VOLTAGE
REGULATION
(Note 2 & 3)
MAXIMUM REVERSE
LEAKAGE CURRE NT
MAXIMUM dc
ZENER
CURRENT*
V
Z
I
ZT
V
Z
I
R
@ V
R
I
ZM
Volts
µA
Volts
µA
Volts
mA
1N4678-1
1N4679-1
1N4680-1
1N4681-1
1N4682-1
1.8
2.0
2.2
2.4
2.7
50
50
50
50
50
0.70
0.70
0.75
0.80
0.85
7.5
5.0
4.0
2.0
1.0
1.0
1.0
1.0
1.0
1.0
240
220
200
190
180
1N4683-1
1N4684-1
1N4685-1
1N4686-1
1N4687-1
3.0
3.3
3.6
3.9
4.3
50
50
50
50
50
0.90
0.95
0.95
0.97
0.99
0.8
7.5
7.5
5.0
4.0
1.0
1.5
2.0
2.0
2.0
170
160
150
140
130
1N4688-1
1N4689-1
1N4690-1
1N4691-1
1N4692-1
4.7
5.1
5.6
6.2
6.8
50
50
50
50
50
0.99
0.97
0.96
0.95
0.90
10.0
10.0
10.0
10.0
10.0
3.0
3.0
4.0
5.0
5.1
120
110
100
90
70
1N4693-1
1N4694-1
1N4695-1
1N4696-1
1N4697-1
7.5
8.2
8.7
9.1
10.0
50
50
50
50
50
0.75
0.50
0.10
0.08
0.10
10.0
1.0
1.0
1.0
1.0
5.7
6.2
6.6
6.9
7.6
63.6
58.0
54.8
52.4
49.6
1N4698-1
1N4699-1
1N4700-1
1N4701-1
1N4702-1
11.0
12.0
13.0
14.0
15.0
50
50
50
50
50
0.11
0.12
0.13
0.14
0.15
0.05
0.05
0.05
0.05
0.05
8.4
9.1
9.8
10.6
11.4
43.2
40.8
38.0
35.0
32.6
1N4703-1
1N4704-1
1N4705-1
1N4706-1
1N4707-1
16.0
17.0
18.0
19.0
20.0
50
50
50
50
50
0.16
0.17
0.18
0.19
0.20
0.05
0.05
0.05
0.05
0.01
12.1
12.9
13.6
14.4
15.2
30.8
29.0
26.4
25.0
23.8
1N4708-1
1N4709-1
1N4710-1
1N4711-1
1N4712-1
22.0
24.0
25.0
27.0
28.0
50
50
50
50
50
0.22
0.24
0.25
0.27
0.28
0.01
0.01
0.01
0.01
0.01
16.7
18.2
19.0
20.4
21.2
21.6
19.8
19.0
17.6
17.0
1N4713-1
1N4714-1
1N4715-1
1N4716-1
1N4717-1
30.0
33.0
36.0
39.0
43.0
50
50
50
50
50
0.30
0.33
0.36
0.39
0.43
0.01
0.01
0.01
0.01
0.01
22.8
25.0
27.3
29.6
32.6
15.8
14.4
13.2
12.2
11.0
*JEDEC registered data except IZM has been increased (doubled) for 500 mW power dissipation capabilities.
NOTES: 1. All types as shown are +/-5% toleran ce. Also available in 2% and 1% tolerance.
2. VZ @ 100 µA minus VZ @ 10 µA.
3. The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when moun ted with 3/8”
mi nimum l ead le ngth from the body.
T4-LDS-0240, Rev. 1 (112022) ©2011 Microsemi C or poration Page 4 of 5
1N4678-1 th r u 1N47 1 7-1
GRAPHS
TLL EAD TEMPERATUR E (oC) 3/8” FROM BODY or NOMINAL ZENER VOLTAGE (VOLTS)
TA on FR4 PC BOARD
FIG URE 1 FIGURE 2
P OW ER DERA TING CURVE ZEN ER VO LTAGE T EM P ER ATUR E
COEFFICIENT vs. ZENER VOLTAGE
Z ENER VOLTAGE VZ
FIGURE 3
CAPACITANCE vs. V Z CURVE
RATED POW ER DISSIPATION - mW
T YPICAL CAPACIT ANCE IN PICOFARADS
At zero volts
At 2 volts (VR)
TEM PERATURE COEFFICIENT %/oC
T EMPERATU RE COEFFIC IENT mV/oC
Voltage Temperature
Coefficient %/
o
C
mV Change /ºC
T4-LDS-0240, Rev. 1 (112022) ©2011 Microsemi C or poration Page 5 of 5
1N4678-1 th r u 1N47 1 7-1
PACKAGE DIM ENSIONS
Ltr
Dimensions
Notes
Inch
Millimeters
Min
Max
Min
Max
BD
.055
.090
1.40
2.29
3
BL
.120
.200
3.05
5.08
3
LD
.018
.022
0.46
0.56
LL
1.000
1.500
25.40
38.10
LL1
.050
1.27
4
NOTES:
1. Dimensions are in inch.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder
but shall not be subject to minimum limit of BD. The BL dimension shall include the entire body including
slugs.
4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.