LESHAN RADIO COMPANY, LTD.
MMUN2111LT1 Series
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
R1
R2
MARKING DIAGRAM
A6x M
A6 x = Device Marking
x = A – L(See Page 2)
M = Date Code
1
3
2
CASE 318, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of this
data sheet.
MMUN2111LT1
SERIES
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
•Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
°C/W
Thermal Resistance –
Junction-to-Ambient RθJA 508 (Note 1.)
311 (Note 2.) °C/W
Thermal Resistance –
Junction-to-Lead RθJL 174 (Note 1.)
208 (Note 2.) °C/W
Junction and Storage
Temperature Range TJ, Tstg –55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
MMUN2111S
-
1/11
LESHAN RADIO COMPANY, LTD.
MMUN2111S–2/11
MMUN2111LT1 Series
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MMUN2111LT1
MMUN2111LT3 SOT–23 A6A 10 10 3000/Tape & Reel
10,000/Tape & Reel
MMUN2112LT1
MMUN2112LT3 SOT–23 A6B 22 22 3000/Tape & Reel
10,000/Tape & Reel
MMUN2113LT1
MMUN2113LT3 SOT–23 A6C 47 47 3000/Tape & Reel
10,000/Tape & Reel
MMUN2114LT1
MMUN2114LT3 SOT–23 A6D 10 47 3000/Tape & Reel
10,000/Tape & Reel
MMUN2115LT1 (Note 3.)
MMUN2115LT3 SOT–23 A6E 10 ∞3000/Tape & Reel
10,000/Tape & Reel
MMUN2116LT1 (Note 3.)
MMUN2116LT3 SOT–23 A6F 4.7 ∞3000/Tape & Reel
10,000/Tape & Reel
MMUN2130LT1 (Note 3.)
MMUN2130LT3 SOT–23 A6G 1.0 1.0 3000/Tape & Reel
10,000/Tape & Reel
MMUN2131LT1 (Note 3.)
MMUN2131LT3 SOT–23 A6H 2.2 2.2 3000/Tape & Reel
10,000/Tape & Reel
MMUN2132LT1 (Note 3.)
MMUN2132LT3 SOT–23 A6J 4.7 4.7 3000/Tape & Reel
10,000/Tape & Reel
MMUN2133LT1 (Note 3.)
MMUN2133LT3 SOT–23 A6K 4.7 47 3000/Tape & Reel
10,000/Tape & Reel
MMUN2134LT1 (Note 3.)
MMUN2134LT3 SOT–23 A6L 22 47 3000/Tape & Reel
10,000/Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc
Emitter-Base Cutoff Current MMUN2111LT1
(V EB = 6.0 V, IC = 0 )MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
IEBO –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc
Collector-Emitter Breakdown Voltage (Note 4.)
(IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc
3. New devices. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
LESHAN RADIO COMPANY, LTD.
MMUN2111S–3/11
MMUN2111LT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5.)
DC Current Gain MMUN2111LT1
(V CE = 10 V, IC = 5.0 mA )MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
60
100
140
140
250
250
5.0
15
27
140
130
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage
(IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1
(IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
VCE(sat) – – 0.25 Vdc
Output Voltage (on)
(V CC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ )MMUN2111LT1
MMUN2112LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
(V CC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ )MMUN2113LT1
VOL –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ )MMUN2115LT1
MMUN2116LT1
MMUN2131LT1
MMUN2132LT1
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ )MMUN2130LT1
VOH 4.9 – – Vdc
Input Resistor MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
R17.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
k Ω
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1
MMUN2114LT1
MMUN2115LT1/MMUN2116LT1
MMUN2130LT1/MMUN2131LT1/MMUN2132LT1
MMUN2133LT1
R1/R20.8
0.17
–
0.8
0.055
1.0
0.21
–
1.0
0.1
1.2
0.25
–
1.2
0.185
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
LESHAN RADIO COMPANY, LTD.
MMUN2111S–4/11
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C
123456 7 8 9 10
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40 60 80
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN (NORMALIZED)
TA=75°C
-25°C
100
10
75°C
50
010 20 30 40
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=-25°C
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
IC/IB=10
VCE = 10 V
0
IC, COLLECTOR CURRENT (mA)
0.1
Vin, INPUT VOLTAGE (VOLTS)
1
10
100
10 20 30 40 50
TA=-25°C
25°C
75°C
VO = 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
PD, POWER DISSIPATION (MILLIWATTS)
RθJA = 625°C/W
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current
25°C
MMUN2111LT1 Series
LESHAN RADIO COMPANY, LTD.
MMUN2111S–5/11
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN (NORMALIZED)
100
10
1100
TA=75°C
25°C
-25°C
Figure 9. Output Capacitance
IC, COLLECTOR CURRENT (mA)
010 20 30
TA=-25°C
75°C
Vin, INPUT VOLTAGE (VOLTS)
100
10
1
0.1 40 50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
75°C25°C
TA=-25°C
IC, COLLECTOR CURRENT (mA)
5 6 7 8 9 10
Figure 11. Input Voltage versus Output Current
0.01
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 60 80
75°C
25°C
TA=-25°C
50
010 2030 40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB=10 VCE = 10 V
LESHAN RADIO COMPANY, LTD.
MMUN2111S–6/11
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2113LT1
Figure 12. VCE(sat) versus IC
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
Vin , INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
75°C
50
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
0.01
0.001 010
IC, COLLECTOR CURRENT (mA)
25°C
Vin, INPUT VOLTAGE (VOLTS)
-25°C
Figure 15. Output Current versus Input Voltage
hFE , CURRENT GAIN (NORMALIZED)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
25°C
-25°C
Figure 16. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
12345 6789
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 2 V
IC/IB=10
TA=75°C
TA=75°C
TA=-25°C
LESHAN RADIO COMPANY, LTD.
MMUN2111S–7/11
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2114LT1
35
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1 01020304050
100
10
10246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 81015202530 404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 18. DC Current Gain
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Cob , CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
f = 1 MHz
lE = 0 V
TA = 25°C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
TA=-25°C
75°C
25°C
TA=75°C25°C
-25°C
VO = 5 V
VO = 0.2 V TA=-25°C
25°C
75°C
IC/IB=10
hFE, DC CURRENT GAIN (NORMALIZED)
1 10 100
IC, COLLECTOR CURRENT (mA)
-25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 1520405060708090