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BSR14 — NPN General Purpose Amplifier

BSR14 Rev. B0 1

September 2012

BSR14

NPN General Purpose Amplifier

Features

• This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

• Sourced from Process 19.

• See BCW65C for characteristics.

Absolute Maximum Ratings* Ta = 25C unless otherwise noted

* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics Ta = 25C unless otherwise noted

* Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

Symbol Parameter Value Units

VCEO Collector-Emitter V oltage 40 V

VCBO Collector-Base V oltage 75 V

VEBO Emitter-Base Voltage 6.0 V

ICCollector Current - Continuous 800 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C

Symbol Parameter Max. Units

*BSR14

PDTotal Device Dissipation

Derate above 25C350

2.8 mW

mW/C

RJA Thermal Resistance, Junction to Ambient 357 C/W

SOT-23

Mark:U8

BSR14 — NPN General Purpose Amplifier

BSR14 Rev. B0 2

Electrical Characteristics Ta = 25°C unless otherwise noted

Spice Model

NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0

Ikr=0 Rc=1 Cjc=7.306p Mj c=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr =46.91n Tf=411.1p Itf=.6 Vtf=1.7

Xtf=3 Rb=10)

Symbol Parameter Test Condition Min. Max. Units

OFF CHARACTERISTICS

V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10A, IB = 0 40 V

V(BR)CBO Collector-Base Breakdown Vo ltage IC = 10A, IE = 0 75 V

V(BR)EBO Emitter-Base Breakdown V o ltage IE = 10A, IC = 0 6.0 V

ICBO Collector-Cutoff Current VCB = 60V,

VCB = 60V, Ta = 150°C 10

10 nA

A

ICEX Collector-Cutoff Current VCE = 60V, VEB = 3.0V 10 nA

IBEX Reverse Base Current VCE = 60V, VEB = 3.0V 20 nA

IEBO Emitter-Cutoff Current VEB = 3.0V, IC = 0 15 nA

ON CHARACTERISTICS

hFE DC Current Gain IC = 0.1mA, VCE = 10V

IC = 1.0mA, VCE = 10V

IC = 10mA, VCE = 10V

IC = 150mA, VCE = 10V

IC = 150mA, VCE = 1.0V

IC = 500mA, VCE = 10V

100

300

VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA 0.3

1.0 V

VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA

IC = 500mA, IB = 50mA 0.6 1.2

2.0 V

SMALL SIGNAL CHARACTERISTICS

fTCurrent Gain - Bandwidth Product IC = 20mA, VCE = 20V,

f = 100mHz 300 MHz

CCB Collector-Base Capacitance VCB = 10V, IE = 0,

f = 1.0MHz 8.0 pF

hie Input Impedance VCE = 10V, IC = 1.0mA,

f = 1.0kHz 2.0 8.0 k

hfe Small-Signal Current Gain VCE = 10V, IC = 1.0mA,

f = 1.0kHz 50 300

hoe Output Admittance VCE = 10V, IC = 1.0mA,

f = 1.0kHz 535S

SWITCHING CHARACTERISTICS

tdDelay Time VCC = 30V, VBE(OFF) =

0.5V, IC = 150mA,

IB1 = 15mA

10 ns

trRise Time 25 ns

tsStorage Time VCC = 30V, IC = 150mA,

IB1 = IB2 = 15mA 225 ns

tfFall Time 60 ns

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Rev. I62

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