MJF122G - ON SEMICONDUCTOR

September, 2008 − Rev. 7

1Publication Order Number:

MJF122/D

MJF122, MJF127

Complementary Power

Darlingtons

For Isolated Package Applications

Designed for general−purpose amplifiers and switching

applications, where the mounting surface of the device is required to

be electrically isolated from the heatsink or chassis.

Features

•Electrically Similar to the Popular TIP122 and TIP127

•100 VCEO(sus)

•5.0 A Rated Collector Current

•No Isolating Washers Required

•Reduced System Cost

•High DC Current Gain − 2000 (Min) @ IC = 3 Adc

•UL Recognized, File #E69369, to 3500 VRMS Isolation

•Pb−Free Packages are Available*

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Voltage

ÎÎÎ

VEB

ÎÎÎÎ

5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

RMS Isolation Voltage (Note 1)

(t = 0.3 sec, R.H. ≤ 30%, TA = 25°C)

Per Figure 14

ÎÎÎ

VISOL

ÎÎÎÎ

4500

ÎÎÎ

VRMS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current −Continuous

Peak

ÎÎÎ

IC

ÎÎÎÎ

5

8

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

IB

ÎÎÎÎ

0.12

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation (Note 2)

@ TC = 25_C

Derate above 25_C

ÎÎÎ

PD

ÎÎÎÎ

30

0.24

ÎÎÎ

W

W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25_C

Derate above 25_C

ÎÎÎ

PD

ÎÎÎÎ

2

0.016

ÎÎÎ

W

W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperat-

ure Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎ

−65 to

+ 150

ÎÎÎ

IC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Ambient

ÎÎÎ

RqJA

ÎÎÎÎ

62.5

ÎÎÎ

_C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction−to−Case

(Note 2)

ÎÎÎ

RqJC

ÎÎÎÎ

4.1

ÎÎÎ

_C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering Purpose

ÎÎÎ

TL

ÎÎÎÎ

260

ÎÎÎ

_C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Proper strike and creepage distance must be provided.

2. Measurement made with thermocouple contacting the bottom insulated

mounting surface (in a location beneath the die), the device mounted on a

heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

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MARKING

DIAGRAM

x = 2 or 7

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

COMPLEMENTARY SILICON

POWER DARLINGTONS

5.0 A, 100 V, 30 W

TO−220

CASE 221D−02

STYLE 2

MJF12xG

AYWW

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

MJF122 TO−220 50 Units / Rail

MJF122G TO−220

(Pb−Free)

50 Units / Rail

MJF127 TO−220 50 Units / Rail

MJF127G TO−220

(Pb−Free)

50 Units / Rail

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

COLLECTOR 2

BASE

1

EMITTER 3

COLLECTOR 2

BASE

1

EMITTER 3

NPN PNP

MJF122 MJF127

3

2

1

MJF122, MJF127

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 3)

(IC = 100 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎ

10

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

−

ÎÎÎ

10

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎ

2

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc)

DC Current Gain (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

2000

ÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc)

Collector−Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎ

2

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

4

ÎÎÎ

−

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance MJF127

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJF122

ÎÎÎÎ

Cob

ÎÎÎÎ

−

ÎÎÎ

300

200

ÎÎÎ

pF

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

Figure 1. Switching Times Test Circuit

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

0.1 0.7 100.5

0.3 25

5

IC, COLLECTOR CURRENT (AMP)

td @ VBE(off) = 0 V

t, TIME (s)μ

2

1

0.5

0.2

0.1

0.05

Figure 2. Typical Switching Times

ts

tf

0.3

3

0.2 1

0.07

0.7

37

PNP

NPN

≈120≈8 k

V2

APPROX.

+8 V

V1

APPROX.

-12 V 25 ms

RB

51 D1

+4 V

VCC

- 30 V

RCSCOPE

TUT

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPES, e.g.,

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

tr

0

MJF122, MJF127

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3

PD, POWER DISSIPATION (WATTS)

0

80

60

40

20

4

3

2

1

TATC

0

Figure 3. Maximum Power Derating

T, TEMPERATURE (°C)

40 60 100 120 16080 140

TC

20

t, TIME (ms)

0.01

0.1 0.5 10 20 50 100 200 500 5K 10

K

152

1

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

SINGLE PULSE

RqJC(t) = r(t) RqJC

TJ(pk) - TC = P(pk) RqJC(t)

RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5

0.3

0.03

0.02

0.2 1K 2K30 3003

0.3 3K

TA

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum Forward Bias

Safe Operating Area

1

10

1

30

CURRENT LIMIT

SECONDARY BREAKDOWN

LIMIT

THERMAL LIMIT @

TC = 25°C (SINGLE PULSE)

IC, COLLECTOR CURRENT (AMPS)

0.1 23 50

3

0.3

10

0.2

d

c

TJ = 150°C1ms

5 ms

100 ms

2

5

0.5

5 10020

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Secondary breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by secondary breakdown.

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4

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Typical Small−Signal Current Gain

f, FREQUENCY (kHz)

70

300

hfe, SMALL-SIGNAL CURRENT GAIN

30

200

100

50

TC = 25°C

VCE = 4 Vdc

IC = 3 Adc

Figure 7. Typical Capacitance

10,000

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

Cib

Cob

0.1

200

100

1000

500

300

10

30

100510.5

2000

3000

5000

10 500.2 2 20

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

NPN

MJF122

PNP

MJF127

Figure 8. Typical DC Current Gain

0.1

IC, COLLECTOR CURRENT (AMP)

200 0.2 0.5

3000

1000

10,000

hFE, DC CURRENT GAIN

VCE = 4 V

TJ = 150°C

5000

0.3 1

25°C

-55°C

2000

0.7 3

20,000

300

500

510

hFE, DC CURRENT GAIN

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3 0.5 0.7 1025

IC = 2 A 4 A

1

6 A

TJ = 25°C

3

120 30

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

3

1

Figure 9. Typical Collector Saturation Region

PNP

NPN

PNP

NPN

1 100050105 100 5002 20 200

20

50

200

3000

1000

10,000

5000

2000

20,000

300

500

2 7 0.1 0.2 0.50.3 10.7 3 5 10

27

VCE = 4 V

TJ = 150°C

25°C

-55°C

IC = 2 A 4 A 6 A

700

7000

3 7 0.3 0.5 0.7 10251203037

TJ = 25°C

MJF122, MJF127

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5

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

0.1

NPN

MJF122

PNP

MJF127

10-1

0+0.4 -0.2 -0.4 -0.6+0.6 +0.2 -0.8 -1 -1.2 -1.4

IC, COLLECTOR CURRENT (AMP)

0

*IC/IB ≤ hFE 3

- 5

104

VBE, BASE-EMITTER VOLTAGE (VOLTS)

10-1

0- 0.4

, COLLECTOR CURRENT (A)

μ

IC

103

102

101

100

+0.2 +0.4 +0.6

TJ = 150°C

100°C

REVERSE FORWARD

25°C

VCE = 30 V

105

-0.6 -0.2 +0.8 +1 +1.2 +1.4

104

VBE, BASE-EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT (A)μIC

103

102

101

100

TJ = 150°C

100°C

REVERSE FORWARD

25°C

VCE = 30 V

105

- 4

- 3

- 2

- 1

qVB FOR VBE

25°C to 150°C

*qVC FOR VCE(sat)

IC, COLLECTOR CURRENT (AMP)

Figure 10. Typical “On” Voltages

Figure 11. Typical Temperature Coefficients

0.1

IC, COLLECTOR CURRENT (AMP)

2

1.5

V, VOLTAGE (VOLTS)

3

2.5

1

0.5

0.2 0.5 50.3 10.7 3 10

IC, COLLECTOR CURRENT (AMP)

2

1.5

V, VOLTAGE (VOLTS)

3

2.5

1

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4 V

TJ = 25°C

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4 V

VCE(sat) @ IC/IB = 250

V, TEMPERATURE COEFFICIENT (mV C)°θ

72 0.1 0.2 0.5 50.3 10.7 3 1072

0.2 0.5 50.3 10.7 3 1072 0.1 0.2 0.5 50.3 1 3 1072

+ 1

+ 2

+ 3

+ 4

+ 5

0

- 5

- 4

- 3

- 2

- 1

+ 1

+ 2

+ 3

+ 4

+ 5

- 55°C to 25°C

*IC/IB ≤ hFE 3

qVB FOR VBE

*qVC FOR VCE(sat)

Figure 12. Typical Collector Cut−Off Region

VCE(sat) @ IC/IB = 250

25°C to 150°C

- 55°C to 25°C

25°C to 150°C

- 55°C to 25°C

25°C to 150°C

- 55°C to 25°C

MJF122, MJF127

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6

BASE

EMITTER

COLLECTOR

≈8 k ≈120

BASE

EMITTER

COLLECTOR

≈8 k ≈120

NPN

MJF122

PNP

MJF127

Figure 13. Darlington Schematic

TEST CONDITIONS FOR ISOLATION TESTS*

FULLY ISOLATED PACKAGE

LEADS

HEATSINK

0.110, MIN

Figure 14. Mounting Position

*Measurement made between leads and heatsink with all leads shorted together.

4-40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

torque of 6 to 8 in .lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-

stant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in .lbs will

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in .lbs without adversely affecting the pack-

age. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend

exceeding 10 in .lbs of mounting torque under any mounting conditions.

Figure 15. Typical Mounting Techniques*

MOUNTING INFORMATION

** For more information about mounting power semiconductors see Application Note AN1040.

MJF122, MJF127

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7

PACKAGE DIMENSIONS

TO−220

CASE 221D−03

ISSUE J

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIM

A

MIN MAX MIN MAX

MILLIMETERS

0.617 0.635 15.67 16.12

INCHES

B0.392 0.419 9.96 10.63

C0.177 0.193 4.50 4.90

D0.024 0.039 0.60 1.00

F0.116 0.129 2.95 3.28

G0.100 BSC 2.54 BSC

H0.118 0.135 3.00 3.43

J0.018 0.025 0.45 0.63

K0.503 0.541 12.78 13.73

L0.048 0.058 1.23 1.47

N0.200 BSC 5.08 BSC

Q0.122 0.138 3.10 3.50

R0.099 0.117 2.51 2.96

S0.092 0.113 2.34 2.87

U0.239 0.271 6.06 6.88

−B−

−Y−

G

N

D

L

K

H

A

F

Q

3 PL

123

M

B

M

0.25 (0.010) Y

SEATING

PLANE

−T−

U

C

S

J

R

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW

STANDARD 221D-03.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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Phone: 81−3−5773−3850

MJF122/D

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