1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from
860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at a frequency of 940 MHz:
Average output power = 2 W
Gain = 29 dB (typ)
Efficiency = 11.5 %
IMD3 = 48.5 dBc
ACPR = 52 dBc
Integrated temperature compensated bias
Excellent thermal stability
Biasing of individual stages is externally accessible
Integrated ESD protection
Small component size, very suitable for PA size reduction
On-chip matching (input matched to 50 , output partially matched)
High power gain
Designed for broadband operation (860 MHz to 960 MHz)
BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
Rev. 2 — 1 March 2011 Product data sheet
Table 1. Application information
Ty pical RF performance at Th = 25
C.
Mode of operation f VDS PL(AV) GpDIMD3 ACPR
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA f1= 935; f2= 945 28 2 29 11.5 48.5[1] 52[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 2 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
2. Pinning information
2.1 Pinning
2.2 Pin description
Transparent top view
Fig 1. Pin configuration
BLM6G10-30
BLM6G10-30G
GND GND
V
DS1
n.c. n.c.
n.c.
n.c.
RF input RF output/V
DS2
n.c.
V
GS1
V
GS2
n.c.
V
DS1
GND GND
001aak500
1
2
3
4
5
6
7
8
9
10
11 12
13
14
15
16
Table 2. Pin description
Pin Description
1, 11, 12, 16 GROUND
2V
DS1
3, 4, 5, 7, 13, 15 n.c.
6RF_INPUT
8V
GS1
9V
GS2
10 VDS1
14 RF_OUTPUT/VDS2
flange RF_GROUND
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 3 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
3. Ordering information
4. Block diagram
5. Limiting values
6. Thermal characteristics
[1] Thermal resistance is determined under specific RF operating conditions.
Table 3. Ordering information
Type number Package
Name Description Version
BLM6G10-30 - HSOP16F: plastic, heatsink small outline package;
16 leads (flat) SOT834-1
BLM6G10-30G - HSOP16: plastic, heatsink small outline package;
16 leads SOT822-1
Fig 2. Block diagram of BLM6G10-30 and BLM6G10-30G
RF_output/VDS2
VDS1
RF_input
VGS1
2
14
6
8
9
VGS2
TEMPERATURE
COMPENSATED BIAS
001aan771
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-sourc e voltage - 65 V
VGS gate-source voltage 0 +13 V
ID1 first stage drain current - 3 A
ID2 second stage drain current - 9 A
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-c)1 first stage thermal resistance
from junction to case Tcase = 80 C; PL=2W;
2-carrier W-CDMA [1] 7.5 K/W
Rth(j-c)2 second st age thermal resistance
from junction to case Tcase = 80 C; PL=2W;
2-carrier W-CDMA [1] 2.3 K/W
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 4 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
7. Characteristics
8. Application information
8.1 Ruggedness
The BLMG10-30 and BLM6G10-30G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS =32V; I
Dq1 = 105 mA; IDq2 = 288 mA ; PL = 30 W (CW).
8.2 Impedance information
[1] Device input impedance as measured from gate to ground.
[2] Test circuit impedance as measured from drain to ground.
Table 6. Characteristics
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probab ility on CCDF;
3GPP test model 1; 1-64 PDPCH; f1= 922.5 MHz; f2= 932.5 MHz; f3= 947.5 MHz; f4= 957.5 MHz;
VDS =28V; I
Dq1 = 105 mA; IDq2 = 250 mA; Th= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average output power - 2 - W
Gppower gain PL(AV) = 2 W 27 29 31 dB
RLin input return loss PL(AV) = 2 W - 15 12 dB
Ddrain efficiency PL(AV) = 2 W 10 11.5 - %
IMD3 third-order intermodulation distortion PL(AV) = 2 W - 48.5 45 dBc
ACPR adjacent channel power ratio PL(AV) = 2 W - 52 48.5 dBc
Table 7. Ty pical impedance
f Zi[1] ZL[2]
MHz
850 43.6 j0 3 j0.8
860 43.5 j0.25 3.2 j0.7
880 43.4 j0.4 3.4 j0.5
900 43.4 j0.6 3.5 j0.2
920 43.5 j0.9 3.45 j0
940 43.6 j1.3 3.2 j0.1
960 43.6 j1.7 3 j0.1
980 43.6 j2 2.7 j0.1
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 5 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
8.3 Performance curves
Performance curves are measured in a BLM6G10-30G application circuit.
Tcase = 25 C; VDS = 28 V; PL(AV) =2W; I
Dq1 = 105 mA;
IDq2 = 288 mA; carrier spacing = 10 MHz. Tcase = 25 C; VDS = 28 V; PL(AV) =2W; I
Dq1 =105mA;
IDq2 = 288 mA; carrier spacing = 10 MHz.
Fig 3. 2-carrier W-CDMA power gain and drain
efficiency as function of frequen cy;
typical values
Fig 4. 2-carrier W-CDMA adjacent channel power
ratio (5 MHz) and adjacent channel power ratio
(10 MHz) as function of frequency; typical
values
VDS = 28 V; IDq1 = 105 mA; IDq2 = 288 mA; f = 940 MHz;
carrier spacing = 10 MHz.
(1) Tcase = 30 C
(2) Tcase = 25 C
(3) Tcase = 85 C
VDS = 28 V; IDq1 =105mA; I
Dq2 = 288 mA; f = 940 MHz;
carrier spacing = 10 MHz.
(1) Tcase = 30 C
(2) Tcase = 25 C
(3) Tcase = 85 C
Fig 5. 2-carrier W-CDMA power gain and drain
efficiency as function of average output power
and temperature; typical values
Fig 6. 2-carrier W-CDMA adjacent power channel
ratio and third order intermodulation distortion
as function of average output power and
temperature; typical values
001aak501
f (MHz)
880 1000960920
29
31
27
33
35
Gp
(dB)
25
9
11
7
13
15
ηD
(%)
5
Gp
ηD
001aak502
f (MHz)
880 1000960920
−50
−52
−48
−46
IMD3,
ACPR
(dBc)
−54
IMD3
ACPR
001aak503
28
26
24
32
30
36
34
Gp
(dB)
22
24
16
8
40
32
56
48
ηD
(%)
0
PL(AV) (W)
10−1102
101
Gp
Gp
(1)
(2)
(3)
(1)
(2)
(3)
Gp
ηD
001aak504
−40
−50
−30
−20
Gp
(dB)
−60
PL(AV) (W)
10−1102
101
(3) (2) (1) ACPR
(3) (2) (1) IMD3
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 6 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
IDq1 =105mA; I
Dq2 = 288 mA.
(1) f = 940 MHz; VDS = 24 V
(2) f = 940 MHz; VDS = 28 V
(3) f = 940 MHz; VDS = 32 V
(4) f = 880 MHz; VDS = 24 V
(5) f = 880 MHz; VDS = 28 V
(6) f = 880 MHz; VDS = 32 V
IDq1 = 105 mA; IDq2 = 288 mA; f1= 940 MHz;
f2= 940.1 MHz.
Fig 7. One-tone CW power gain as function o f output
power and drain-source voltage; typical value Fig 8. Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
value
Test signal: IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on
the CCDF.
(1) Tcase = 30 C
(2) Tcase = 25 C
(3) Tcase = 80 C
Fig 9. Single-carrier peak output power (pe aks 3 dB compressed) as function of frequency and temperature;
typical valu e s
PL (W) 705010 604020030
001aak505
27
25
23
29
31
Gp
(dB)
21
(1) (2) (3)
(4)
(5)
(6)
001aak506
−60
−70
−80
−40
−50
−20
−30
IMD
(dBc)
−90
PL(PEP) (W)
10−1102
101
IMD3
IMD5
IMD7
f (MHz)
820 1000940880
001aak507
20
40
60
PL(M)
(W)
0
(1)
(2)
(3)
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 7 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
8.4 Application circuit
Fig 10. Class-AB application circuit
001aan772
BLM6G1030
BOARD 3 DEV
REV1
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 8 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
[1] American Technical Ceramics type 100A or capacitor of same quality.
See Table 8 for list of components.
Fig 11. Component layout for class-AB application circuit
Table 8. List of components
For application circuit, see Figure 11.
Printed-Circuit Board (PCB): Rogers 4350B;
r = 3.5 F/m; thickness = 0.762 mm; Cu (top/bottom
metallization).
Component Description Value Remarks
C1, C2, C5, C13, C16 multilayer ceramic chip capacitor 100 nF
C3, C4, C14, C17 multilayer ceramic chip capacitor 4.7 F; 50 V
C6, C12, C15 multilayer ceramic chip capacitor 68 pF [1]
C7 electrolytic capacitor 220 F; 35 V
C8, C9 multilayer ceramic chip capacitor 11 pF [1]
C10, C11 multilayer ceramic chip capacitor 4.3 pF [1]
C18 electrolytic capacitor 470 F; 35 V
R1 SMD resistor 1.5 k
R2 SMD resistor 3.3 k
001aan773
BLM6G1030
BOARD 3 DEV
REV1
C4
C6
C8
C14
C13 C18
VDS2
C12
C9 C10 C11
S1
C2
C3
C1
R2
R1
C5
C7
C17
C16
C15
VDS1
VGS1 VGS2
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 9 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
9. Test information
[1] American Technical Ceramics type 100A or capacitor of same quality.
Striplines are on a Rogers 4350B Printed-Circuit Board (PCB) with r = 3.5; thickness = 0.762 mm.
See Table 9 for a list of components.
Fig 12. Component layout for 860 MHz to 960 MHz circuit for 2-carrier W-CDMA
Table 9. List of components
For test circuit see Figure 12.
Component Description Value Remarks
C1, C2, C13,
C14 multilayer ceramic chip capacitor 4.7 F TDK4532X7R1E475Mt020U
C3, C4, C5,
C11, C12 multilayer ceramic chip capacitor 100 nF Murata X7R or equivalent
C6, C9, C10 multilayer ceramic chip capacitor 68 pF [1]
C7, C8 multilayer ceramic chip capacitor 11 pF [1]
C15 multilayer ceramic chip capacitor 6.2 pF [1]
C16 multilayer ceramic chip capacitor 5.1 pF [1]
C17, C18 electrolytic capacitor 220 F; 63 V
R1 SMD resistor 1.5 k
R2 SMD resistor 3.3 k
S1 short piece of copper foil
001aan774
BLM6G1030
BOARD 3 JSH
REV2
C1
C6
C7
C13
C11
C18
VDS2
VDS2
C9
C8 C15 C16
S1
C5
C2
C3
R2
R1
C4
C17
C14
C12
C10
VDS1
VGS1 VGS2
VDS1
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 10 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
10. Package outline
Fig 13. Package outline SOT834-1
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT834-1
sot834-1_po
03-10-22
10-10-20
Unit(1)
mm max
nom
min
Dimensions
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
vA
y
w
w
bp (10×)
w
HSOP16F: plastic, heatsink small outline package; 16 leads (flat) SOT834-1
e3(2×)
1216
111
X
E
c
D
E2
e1
(6×)(2×)
e2(4×)
D2
Z
bp2
bp1 (5×)
D1
HE
E1
A
e
pin 1 index
0 5 10 mm
scale
0.43
0.28
0.32
0.23
16.0
15.8
13.0
12.6
1.1
0.9
11.1
10.9
6.2
5.8
2.9
2.5 1.02 1.37 16.2
15.8
1.7
1.5
A2bpbp1
1.09
0.94
5.87
5.72
3.5
3.2
bp2 cD
(1) D1
0.25
wyZD2E(1) E1E2ee
1e2
5.69
e3
3.81 0.1 2.5
2.0
HEQ1
0.25
v
detail X
Q1
A2
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 11 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
Fig 14. Package outline SOT822-1
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT822-1
sot822-1_po
07-02-08
10-10-20
Unit(1)
mm max
nom
min 3.6 0.2
00.35 0.06
−0.06
0.43
0.28
1.09
0.94
5.87
5.72
0.32
0.23
16.0
15.8
13.0
12.6
1.1
0.9
11.1
10.9 1.02 1.37
A
Dimensions
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included
A1A2
3.5
3.2
A3A4bpbp1
3.81
e3HELp
bp2 cD
(1) D1D2E(1) E1
6.2
5.8
E2
2.9
2.5
14.5
13.9
1.1
0.8
ee
1
5.69
e2
SOT822-1HSOP16: plastic, heatsink small outline package; 16 leads
y
DA
vA
X
E
c
E2
HE
bp (10×)w
w
11
16
1
pin 1 index E1
D2
e3(2×)
e1(2×)
e2(4×)
e(6×)
bp2
bp1 (5×)
D1
12
Z
0.1 2.5
2.0
8°
0°
yZθ
0.25
v
0.25
w
1.5
1.4
Q
w
0 5 10 mm
scale
detail X
Lp
Q
A
A4
(A3)
A1
A2
θ
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 12 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
11. Handling information
11.1 Moisture sensitivity
12. Abbreviations
13. Revision history
Table 10. Moistu re sen sitivity level
Test methodology Class
JESD-22-A113 3
Table 11. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
LDMOS Laterally Diffused Metal Oxide Semiconductor
MMIC Monolithic Microwave Integrated Circuit
PA Power Amplifier
PAR Peak-to-Average power Ratio
PDPCH transmission Power of the Dedicated Physical CHannel
RF Radio Frequency
SMD Surface Mounted Devices
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Acce ss
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLM6G10-30_BLM6G10-30G v.2 20110301 Product data sheet - BLM6G10-30_BLM6G10-30G v.1
Modifications: •The title of the document has been changed
•Table 1 on page 1: The title of the table has been changed
•Section 1.2 on page 1: The frequency range has been changed where applicable
•Figure 2 on page 3: Figure has been added
•Table 6 on page 4: The value of IDq2 has been changed
•Figure 3 on page 5: Figure has been changed
•Figure 4 on page 5: Figure has been changed
•Figure 7 on page 6: Figure has been changed
•Figure 9 on page 6: Figure has been changed
•Section 8.4 on page 7: Section has been added
•Section 9 on page 9: Section has been added
BLM6G10-30_BLM6G10-30G v.1 20090828 Objective data sheet - -
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 13 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conf lict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
14.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental ,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-crit ical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors pro duct can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liabili ty related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for th e customer’s applications and pro ducts using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the obj ective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 1 March 2011 14 of 15
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It i s neit her qualif ied nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed produ ct claims result ing from custome r design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specif ications.
14.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of rele ase: 1 March 2011
Document id entifier: BLM6G10-30 _BLM6G10-30G
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Application information. . . . . . . . . . . . . . . . . . . 4
8.1 Ruggedness . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
8.3 Performance curves . . . . . . . . . . . . . . . . . . . . . 5
8.4 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7
9 Te st information. . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Handling information. . . . . . . . . . . . . . . . . . . . 12
11 .1 Moisture sensitivity. . . . . . . . . . . . . . . . . . . . . 12
12 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
15 Contact information. . . . . . . . . . . . . . . . . . . . . 14
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
