UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features * * * * * High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A ESD Rating - Machine Model: C These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (6) (5) (4) Q2 Q1 (1) (2) (3) MAXIMUM RATINGS (TA = 25C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc 1 Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc SC-88 CASE 419B IC 200 mAdc Collector Current - Continuous THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25C Derate above 25C MARKING DIAGRAM Symbol Max Unit PD 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW mW/C Thermal Resistance, Junction-to-Ambient RqJA 670 (Note 1) 490 (Note 2) C/W Characteristic (Both Junctions Heated) Symbol Max Unit PD 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW Total Device Dissipation TA = 25C Derate above 25C mW/C Thermal Resistance, Junction-to-Ambient RqJA 493 (Note 1) 325 (Note 2) C/W Thermal Resistance, Junction-to-Lead RqJL 188 (Note 1) 208 (Note 2) C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature December, 2010 - Rev. 8 1 3Z = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad (c) Semiconductor Components Industries, LLC, 2010 3Z M G G Device* UMZ1NT1G Package Shipping SC-88 (Pb-Free) 3000 / Tape & Reel *The "T1" suffix refers to a 7 inch reel. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: UMZ1NT1/D UMZ1NT1G Q1: NPN ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 - - Vdc Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 7.0 - - Vdc Collector-Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO - - 0.1 mAdc Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80C) ICEO - - - - - - 0.1 2.0 1.0 mAdc mAdc mAdc DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 200 - 400 - VCE(sat) - - 0.25 Vdc fT - 114 - MHz Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO -50 - - Vdc Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO -60 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO -7.0 - - Vdc Collector-Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO - - -0.1 mAdc Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80C) ICEO - - - - - - -0.1 -2.0 -1.0 mAdc mAdc mAdc DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE Transistor Frequency 3. Pulse Test: Pulse Width 300 ms, D.C. 2%. Q2: PNP ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Transistor Frequency http://onsemi.com 2 200 - 400 - VCE(sat) - - -0.3 Vdc fT - 142 - MHz UMZ1NT1G TYPICAL ELECTRICAL CHARACTERISTICS: PNP TRANSISTOR 1000 -1.5 mA -2.0 mA -160 -1.0 mA -120 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) -200 -0.5 mA -80 IB = -0.2 mA -40 0 TA = 25C 0 -1 -2 -3 -4 -5 TA = 100C 25C 10 -6 VCE = -1.0 V -1 VCE, COLLECTOR-EMITTER VOLTAGE (V) -25C 100 VCE = -6.0 V -100 -1000 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100C -10 IC/IB = 10 TA = 100C 25C -25C -0.1 -0.01 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC -10,000 -1 TA = 25C IC/IB = 10 -10 -100 IB, BASE CURRENT (mA) -10 BASE-EMITTER SATURATION VOLTAGE (V) -1000 -1 IC, COLLECTOR CURRENT (mA) -0.1 -1 -100 Figure 2. DC Current Gain 1000 10 -1 -10 IC, COLLECTOR CURRENT (mA) Figure 1. Collector Saturation Region 25C -25C 100 -1000 TA = 100C 25C -25C -100 -10 -1 -0.1 -1000 COMMON EMITTER VCE = 6 V 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 IC, COLLECTOR CURRENT (mA) VBE, BASE-EMITTER VOLTAGE (V) Figure 5. VBE(sat) versus IC Figure 6. Base-Emitter Voltage http://onsemi.com 3 -1 UMZ1NT1G TYPICAL ELECTRICAL CHARACTERISTICS: NPN TRANSISTOR 1000 6.0 mA 5.0 mA 240 2.0 mA 3.0 mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 280 200 1.0 mA 160 120 0.5 mA 80 IB = 0.2 mA 40 TA = 100C 25C -25C 100 TA = 25C 0 0 1 2 3 4 5 10 6 VCE = 1.0 V 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100C 25C -25C 100 VCE = 6.0 V 10 100 1000 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Figure 8. DC Current Gain 1000 1 1 IC/IB = 10 TA = 100C 25C 0.1 0.01 1 100 1000 IC, COLLECTOR CURRENT (mA) Figure 9. DC Current Gain Figure 10. VCE(sat) versus IC 10,000 IB, BASE CURRENT (mA) 10 BASE-EMITTER SATURATION VOLTAGE (V) -25C 10 IC, COLLECTOR CURRENT (mA) 1 0.1 1000 IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Voltage 10 100 TA = 25C IC/IB = 10 1 10 100 1000 TA = 100C 25C -25C 100 10 1 0.1 1000 COMMON EMITTER VCE = 6 V 0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VBE, BASE-EMITTER VOLTAGE (V) Figure 11. VBE(sat) versus IC Figure 12. Base-Emitter Voltage http://onsemi.com 4 0.9 1 UMZ1NT1G PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE -E- b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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