UMZ1NT1G - ON Semiconductor L.L.C.

December, 2010 − Rev. 8

Publication Order Number:

UMZ1NT1/D

UMZ1NT1G

Complementary Dual

General Purpose

Amplifier Transistor

PNP and NPN Surface Mount

Features

•High Voltage and High Current: VCEO = 50 V, IC = 200 mA

•High hFE: hFE = 200X400

•Moisture Sensitivity Level: 1

•ESD Rating − Human Body Model: 3A

ESD Rating − Machine Model: C

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Value Unit

Collector−Base Voltage V(BR)CBO 60 Vdc

Collector−Emitter Voltage V(BR)CEO 50 Vdc

Emitter−Base Voltage V(BR)EBO 7.0 Vdc

Collector Current − Continuous IC200 mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated) Symbol Max Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD187 (Note 1)

256 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

mW/°C

Thermal Resistance, Junction-to-Ambient RqJA 670 (Note 1)

490 (Note 2)

°C/W

Characteristic

(Both Junctions Heated) Symbol Max Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD250 (Note 1)

385 (Note 2)

2.0 (Note 1)

3.0 (Note 2)

mW/°C

Thermal Resistance, Junction-to-Ambient RqJA 493 (Note 1)

325 (Note 2)

°C/W

Thermal Resistance, Junction-to-Lead RqJL 188 (Note 1)

208 (Note 2)

°C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

SC−88

CASE 419B

MARKING DIAGRAM

3Z = Device Code

M = Date Code

G= Pb−Free Package

Device*Package Shipping†

ORDERING INFORMATION

*The “T1” suffix refers to a 7 inch reel.

(4)(5)

(6)

(1) (2) (3)

3Z MG

UMZ1NT1G SC−88

(Pb−Free)

3000 /

Tape & Reel

(Note: Microdot may be in either location)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

http://onsemi.com

UMZ1NT1G

http://onsemi.com

Q1: NPN

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Collector−Emitter Breakdown Voltage

(IC = 2.0 mAdc, IB = 0)

V(BR)CEO 50 − − Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO 60 − − Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO 7.0 − − Vdc

Collector−Base Cutoff Current

(VCB = 45 Vdc, IE = 0)

ICBO − − 0.1 mAdc

Collector−Emitter Cutoff Current

(VCE = 10 Vdc, IB = 0)

(VCE = 30 Vdc, IB = 0)

(VCE = 30 Vdc, IB = 0, TA = 80°C)

ICEO

−

0.1

2.0

1.0

mAdc

DC Current Gain (Note 3)

(VCE = 6.0 Vdc, IC = 2.0 mAdc)

hFE 200

−

400

−

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat) − − 0.25 Vdc

Transistor Frequency fT−114 −MHz

3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

Q2: PNP

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Collector−Emitter Breakdown Voltage

(IC = 2.0 mAdc, IB = 0)

V(BR)CEO −50 − − Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO −60 − − Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO −7.0 − − Vdc

Collector−Base Cutoff Current

(VCB = 45 Vdc, IE = 0)

ICBO − − −0.1 mAdc

Collector−Emitter Cutoff Current

(VCE = 10 Vdc, IB = 0)

(VCE = 30 Vdc, IB = 0)

(VCE = 30 Vdc, IB = 0, TA = 80°C)

ICEO

−

−0.1

−2.0

−1.0

mAdc

DC Current Gain (Note 3)

(VCE = 6.0 Vdc, IC = 2.0 mAdc)

hFE 200

−

400

−

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat) − − −0.3 Vdc

Transistor Frequency fT−142 −MHz

UMZ1NT1G

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS: PNP TRANSISTOR

Figure 1. Collector Saturation Region

0−1−2−3−4−6−5

−200

−40

IC, COLLECTOR CURRENT (mA)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

−80

−120

−160

Figure 2. DC Current Gain

−1−10 −100 −1000

1000

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (mA)

100

TA = 25°C

−2.0 mA −1.5 mA

−1.0 mA

−0.5 mA

IB = −0.2 mA

VCE = −1.0 V

TA = 100°C

−25°C25°C

Figure 3. DC Current Gain

−1−10 −1000−100

1000

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (mA)

100

Figure 4. VCE(sat) versus IC

−1−10 −100 −1000

−1

−0.01

VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

−0.1

IC/IB = 10

TA = 100°C

−25°C

25°C

TA = 100°C

−25°C

25°C

Figure 5. VBE

(

sat

)

versus IC

−1−10 −1000−100

−10

−0.1

BASE−EMITTER SATURATION

VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

−1

Figure 6. Base−Emitter Voltage

0−0.1

−10,000

IB, BASE CURRENT (mA)

VBE, BASE−EMITTER VOLTAGE (V)

−0.1

COMMON EMITTER

VCE = 6 V TA = 100°C

−25°C

25°C

TA = 25°C

IC/IB = 10

−1

−10

−100

−1000

−0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1

VCE = −6.0 V

UMZ1NT1G

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS: NPN TRANSISTOR

Figure 7. Collector Saturation Voltage

01 2 3 4 65

280

IC, COLLECTOR CURRENT (mA)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

120

160

Figure 8. DC Current Gain

1 10 100 1000

1000

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (mA)

100

TA = 25°C

6.0 mA

1.0 mA

IB = 0.2 mA

VCE = 1.0 V

TA = 100°C

−25°C

25°C

Figure 9. DC Current Gain

1 10 1000100

1000

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (mA)

100

Figure 10. VCE(sat) versus IC

1 10 100 1000

0.01

VCE(sat), MAXIMUM COLLECTOR VOLTAGE

(V)

IC, COLLECTOR CURRENT (mA)

0.1

IC/IB = 10

TA = 100°C

−25°C

25°C

TA = 100°C

−25°C

25°C

Figure 11. VBE

(

sat

)

versus IC

1 10 1000100

0.1

BASE−EMITTER SATURATION

VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

Figure 12. Base−Emitter Voltage

0 0.1

10,000

IB, BASE CURRENT (mA)

VBE, BASE−EMITTER VOLTAGE (V)

0.1

COMMON EMITTER

VCE = 6 V TA = 100°C

−25°C

25°C

TA = 25°C

IC/IB = 10

100

1000

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

5.0 mA

3.0 mA

200

240

2.0 mA

0.5 mA

VCE = 6.0 V

UMZ1NT1G

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

E0.2 (0.008) MM

123

654

−E−

b6 PL

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

DIM MIN NOM MAX

MILLIMETERS

A0.80 0.95 1.10

A1 0.00 0.05 0.10

b0.10 0.21 0.30

C0.10 0.14 0.25

D1.80 2.00 2.20

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

MIN NOM MAX

INCHES

0.20 REF 0.008 REF

E1.15 1.25 1.35

e0.65 BSC

L0.10 0.20 0.30

2.00 2.10 2.20

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

ǒmm

inchesǓ

SCALE 20:1

0.65

0.025

0.65

0.025

0.50

0.0197

0.40

0.0157

1.9

0.0748

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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Phone: 81−3−5773−3850

UMZ1NT1/D

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