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XP262N7002TR-G
N-channel MOSFET 60V, 0.3A
■EQUIVALENT CIRCUIT
■ABSOLU TE M AXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
±20
V
Drain Cur r ent (DC)
I
D
0.3
A
Drain Current(Pulse) (*1) IDP 0.6 A
Channel Power Dissipation
(*2)
P
d
0.4
W
Junction Temperature
T
J
150
℃
Storage Temperature Tstg -55~150 ℃
(*1)PW≦10μs,duty cycle≦1%
(*2)When implemented on a PCB defined by JESD51-7
■
PRODUCT NAME
PRODUCT NAME PACKAGE ORDER UNIT
XP262N7002TR-G * SOT-23(TO-236) 3,000 pcs/ Reel
* The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant
ETR11047-001
■FEATURES
On-State Resistance
Driving voltage
: R
DS
(on)
＝
1.6Ω @V
GS
=10V
: 4.5V
Environmentally Friendly
: EU RoHS Compliant, Pb Free
■APPLICATIONS
●
Switching
■
PIN CONFIGURATION
●SOT-23(TO-236)
3
21
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XP262N7002TR-G
■ELECTRICAL CHARA C TERISTICS
Ta=25℃
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain-Source B reakdown Volt age V(BR)DSS ID= 250μA, VGS= 0V 60 - - V
Drain-Source Leakage Current IDSS VDS= 60V, V GS= 0V - - 1 μA
Gate-Source Leakage Current IGSS VGS= ±20V, VDS= 0V - - ±10 μA
Gate Threshold Voltage VGS(off) ID= 250uA, VDS= VGS 1.1 1.6 2.1 V
Drain-Source On Resistance RDS(on) VGS= 10V, ID= 100mA - 1.1 1.6 Ω
VGS= 4. 5V, ID= 100mA - 1.5 2.1 Ω
Input Capacitance Ciss VDS= 20V, VGS= 0V
f= 1 MH z
- 30 - pF
Output Capacit ance Coss - 7 - pF
Reverse Transfer Capaci t ance Crss - 4 - pF
Turn-on Delay Time td(on)
VDD= 10V, ID= 100mA
VGS= 10V
- 9 - ns
Rise Time tr - 4 - ns
Turn-off Delay Time td(off) - 30 - ns
Fall Time tf - 9 - ns
Total Gate Charge Qg VDS= 20V, ID= 150mA
VGS= 10V
- 0.72 - nC
Gate-Source Charge Qgs - 0.08 - nC
Gate-Drain Charge Qgd - 0.24 - nC
Diode Forward Voltage VSD IS= 100mA, VGS= 0V - 0.7 1.1 V
■NOTES ON USE
1. Please us e this IC within the absolute maximum ratings.
Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and
thermal stre ss may cause reliability degradation of the IC.
2. Torex places an importance on improving our products and their reliability.
We request that users inc orporate fail-safe designs and post-aging protection treatment when using Torex products in
their sy stems.
3/6
XP262N7002TR-G
■TYPICAL PERFORMANCE CHA RAC TERISTICS
(1) Drain Current vs. Drain-Source Voltage (2) Drain Current vs. Gate-Source Voltage
(3) Drain-Source On Resistance vs. Gate-Source Voltage (4) Drain-Source On Resistance vs. Ambient Temperature
(5) Drain-Source On Resistance vs. Drain Current (6) Source Current vs. Diode Forward Voltage
0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 0.5 1.0 1.5 2.0
Drain Current: I
D
(A)
Drain-Source Voltage: V
DS
(V)
3.0V
VGS=2.5V
Ta=25℃
10V 4.5V
0.001
0.01
0.1
1
0.0 1.0 2.0 3.0 4.0
Drain Current : I
D
(A)
Gate-Source Voltage: V
GS
(V)
Ta=125℃
25℃
-25℃
0
1
2
3
4
5
0246810
Drain-Source OｎResistance: R
DS
(on) (Ω)
Gate-Source Voltage: V
GS
(V)
ID=100mA
Ta=25℃
0
1
2
3
4
-50 050 100 150
Drain-Source On Resistance: RDS(on) (Ω)
Ambient Temperature: Ta (℃)
10V
VGS=4.5V
ID=100mA
0
1
2
3
4
5
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Drain-Source On Resistance: R
DS
(on) (Ω)
Drain Current: I
D
(A)
VGS=10V
Ta=25℃
4.5V
0.001
0.01
0.1
1
0.0 0.2 0.4 0.6 0.8 1.0
Source Current: I
S
(A)
Diode Forward Voltage: V
SD
(V)
Ta=125℃
-25℃
25℃
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XP262N7002TR-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(7) Ciss, Coss, Crss vs. Drain-Source Voltage (8) Gate-Source Voltage vs. Gate Charge
(9) Area of Safe Operation
1
10
100
1000
010 20 30 40 50 60
Capacitance: Ciss, Coss, Crss (pF)
Drain-Source Voltage: V
DS
(V)
Ciss
f=1MHz, Ta=25℃
Coss
Crss
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8
Gate-Source Voltage: V
GS
(V)
Gate Charge: Qg (nC)
VDS=20V, ID=150mA
Ta=25℃
0.01
0.1
1
0.1 110 100
Drain Current: I
D
(A)
Drain-Source Voltage: V
DS
(V)
DC Operation
R
DS(on)
(VGS=10V)
Limit
Ta=25℃
Single pulse
Mounted on a FR4 board
(8700mm2 x 1.6mm)
100µs
1ms
10ms
100ms
1s
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XP262N7002TR-G
■PACKAGING INFORMATION
For the latest package information go to, www.torexsemi.com/technical-support/packages
PACKAGE OUTLINE / LAND PAT TERN THERMAL CHARACTERISTICS
SOT-23(TO-236) SOT-23(TO-236) PKG JESD51-7 Board SOT-23(TO-236) PowerDissipation
■MARKING RULE
MARK
PRODUCT SERIES
①
②
③
6
2
N
XP262N7002**-G
●SOT-23(TO-236)
①，②，③represents product
series
④，⑤
represents production lot number
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ, B1 to ZZ repeated
(G，I，J，O，Q，W excluded)
*No character inversion used
SOT-23(TO-236)
① ② ③ ④ ⑤
1
2
3
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XP262N7002TR-G
1. The product and product specifications contained herein are subject to change without notice to
improve performance characteristics. Consult us, or our representatives before use, to confirm that
the information in this datasheet is up to date.
2. The information in this datasheet is intended to illustrate the operation and characteristics of our
products. We neither make warranties or representations with respect to the accuracy or
completeness of the information contained in this datasheet nor grant any lic ense to any intellectual
property rights of ours or any third party c oncerning with the information in this datasheet.
3. Applicable export control laws and regulations should be complied and the procedures required by
such laws and regulations should also be followed, when the product or any information contained in
this datasheet is exported.
4. The product is neither intended nor warranted for use in equipment of systems which require
extrem ely high levels of quality and/or reliability and/or a malfuncti on or failure which may cause loss
of human life, bodily injury, serious proper ty dam age inc luding but not limit ed to devi ces or equip ment
used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and
other transportation industry and 5) safety devices and safety equipment to control combustions and
explosions. Do not use the product for the above use unless agreed by us in writing in advance.
5. Although we make continuous efforts to improve the quality and reliability of our products;
neverthel ess Semiconduct ors are likely to fail with a certain pr obability. So in or der to prev ent persona l
injury and/or property damage resulting from such failure, customers are required to incorporate
adequate safety measur es in their d esign s, such as sy stem fail safes, r edu ndancy and fir e preventio n
features.
6. Our products are not desi gned to be Radiation-resistant.
7. Please us e the product lis ted in this datasheet within the specified ranges.
8. We as sume no responsibility for damage or loss due to abnormal use.
9. All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Torex
Semiconductor Ltd in writing in advance.
TOREX SEMICONDUCTOR LTD.
