Si6463BDQ Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * Compliant to RoHS Directive 2002/95/EC S* G TSSOP-8 D 1 S 2 S 3 G 4 Si6463BDQ * Source Pins 2, 3, 6 and 7 must be tied common. 8 D 7 S 6 S 5 D D Top View P-Channel MOSFET Ordering Information: Si6463BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD - 6.2 - 5.9 - 4.9 - 30 - 1.35 - 0.95 1.5 1.05 1.0 0.67 TJ, Tstg Operating Junction and Storage Temperature Range V - 7.4 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 65 83 100 120 46 56 Unit C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 www.vishay.com 1 Si6463BDQ Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.45 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 A Gate-Body Leakage IGSS VDS = 0 V, VGS = 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a V nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70 C - 10 VDS = - 5 V, VGS = - 4.5 V RDS(on) - 0.8 100 - 20 A A VGS - 4.5 V, ID = - 7.4 A 0.011 0.015 VGS = - 2.5 V, ID = - 6.3 A 0.015 0.020 0.027 VGS = - 1.8 V, ID = - 5.5 A 0.020 gfs VDS = - 15 V, ID = - 7.4 A 34 VSD IS = - 1.3 A, VGS = 0 V - 0.64 - 1.1 40 60 S V Dynamicb Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDS = - 10 V, VGS = - 5 V, ID = - 7.4 A td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 8 tr Rise Time 5.2 35 55 VDD = - 10 V, RL = 15 ID - 1 A, VGEN = - 4.5 V, Rg = 6 40 60 190 300 90 150 IF = - 1.3 A, dI/dt = 100 A/s 75 120 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 30 30 VGS = 5 V thru 2 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 18 1.5 V 12 18 12 TC = 125 C 6 6 25 C - 55 C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 Si6463BDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5000 4000 0.024 VGS = 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance () 0.030 VGS = 2.5 V 0.018 VGS = 4.5 V 0.012 Ciss 3000 2000 0.006 1000 0.000 0 Coss Crss 0 6 12 18 24 0 30 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.6 5 VGS = 4.5 V ID = 7.4 A VDS = 10 V ID = 7.4 A 4 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 12 3 2 1.4 1.2 1.0 0.8 1 0.6 - 50 0 0 8 16 24 32 40 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.06 30 R DS(on) - On-Resistance () I S - Source Current (A) 0.05 TJ = 150 C 10 TJ = 25 C 1 0.0 0.04 ID = 7.4 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 1.2 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si6463BDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 200 0.4 160 ID = 250 A Power (W) V GS(th) Variance (V) 0.2 0.0 120 80 - 0.2 40 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 TJ - Temperature (C) 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on) * 1 ms I D - Drain Current (A) 10 10 ms 1 100 ms 1s 0.1 0.01 0.1 10 s DC TC = 25 C Single Pulse 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 100 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72018 S10-2138-Rev. C, 20-Sep-10 Si6463BDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72018. Document Number: 72018 S10-2138-Rev. 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