IRF450 - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS =0V, TC = 25°C Continuous Drain Current 12

ID @ VGS = 0V, TC = 100°C Continuous Drain Current 7.75

IDM Pulsed Drain Current ➀48

PD @ TC = 25°C Max. Power Dissipation 150 W

Linear Derating Factor 1.2 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy ➁8.0 mJ

IAR Avalanche Current ➀12 A

EAR Repetitive Avalanche Energy ➀-mJ

dv/dt Peak Diode Recovery dv/dt ➂3.5 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)

Weight 11.5(typical) g

PD - 90330F

The HEXFETtechnology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

REPETITIVE A V ALANCHE AND dv/dt RATED IRF450

HEXFETTRANSISTORS JANTX2N6770

THRU-HOLE (TO-204AA/AE) JANTXV2N6770

01/22/01

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TO-3

Product Summary

Part Number BVDSS RDS(on) ID

IRF450 500V 0.400Ω 12A

Features:

nRepetitive Avalanche Ratings

nDynamic dv/dt Rating

nHermetically Sealed

nSimple Drive Requirements

nEase of Paralleling

For footnotes refer to the last page

500V, N-CHANNEL

IRF450

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Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction to Case — — 0.83

RthJA Junction to Ambient — — 30 Typical socket mount

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — 1 2

ISM Pulse Source Current (Body Diode) ➀—— 48

VSD Diode Forward Voltage — — 1 .7 V Tj = 25°C, IS =12A, VGS = 0V ➃

trr Reverse Recovery Time — — 1600 nS Tj = 25°C, IF =12A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge — — 1 4 µC VDD ≤ 50V ➃

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

For footnotes refer to the last page

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State — — 0.400 VGS = 10V, ID = 7.75A➃

Resistance — — 0.500 VGS = 10V, ID =12A ➃

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA

gfs Forward Transconductance 5.5 — — S ( )V

DS > 15V, IDS = 7.75A ➃

IDSS Zero Gate Voltage Drain Current — — 2 5 VDS=400V , VGS=0V

— — 250 VDS = 400V

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge 55 — 120 VGS =10V, ID=12A

Qgs Gate-to-Source Charge 5.0 — 19 nC VDS = 250V

Qgd Gate-to-Drain (‘Miller’) Charge 27 — 70

td(on) Turn-On Delay Time — — 35 VDD =250V, ID =12A,

trRise Time — — 190 RG =2.35Ω

td(off) Turn-Off Delay Time — — 170

tfFall Time — — 130

LS + LDTotal Inductance — 6.1 —

Ciss Input Capacitance — 2700 VGS = 0V, VDS = 25V

Coss Output Capacitance — 600 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 240 —

Ω

µA

Ω

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

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IRF450

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

IRF450

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

13 a& b

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IRF450

Fig 10a. Switching Time Test Circuit

90%

10%

GS t

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

RGD.U.T.

10V

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

IRF450

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QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

10V

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IRF450

Foot Notes:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 01/01

➂ ISD ≤ 12, di/dt ≤ 130A/µs,

VDD≤ 500V, TJ ≤ 150°C

Suggested RG =2.35 Ω

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = 50V, starting TJ = 25°C,

Peak IL = 12A, ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions —TO-204AA (Modified TO-3)