© 2010 IXYS CORPORATION, All Rights Reserved
LinearTM Power
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 1000V
ID25 = 12A
RDS(on) ≤≤
≤≤
≤ 1.3ΩΩ
ΩΩ
Ω
DS99126B(04/10)
Features
• International Standard Package
• Designed for Linear Operation
• Avalanche Rated
• Molding Epoxy Meets UL94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Programmable Loads
• Current Regulators
• DC-DC Converters
• Battery Chargers
• DC Choppers
• Temperature and Lighting Controls
IXTH12N100L
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS V
GS = 0V, ID = 250μA 1000 V
VGS(th) V
DS = VGS, ID = 250μA 3.5 5.5 V
IGSS V
GS = ±30V, VDS = 0V ±100 nA
IDSS V
DS = VDSS, VGS = 0V 50 μA
TJ = 125°C 500 μA
RDS(on) V
GS = 20V, ID = 0.5 • IDSS, Note 1 1.3 Ω
G = Gate D = Drain
S = Source Tab = Drain
TO-247
G
S Tab
D
Symbol Test Conditions Maximum Ratings
VDSS T
J = 25°C to 150°C 1000 V
VDGR T
J = 25°C to 150°C, RGS = 1MΩ 1000 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 T
C = 25°C 12 A
IDM T
C = 25°C, Pulse Width Limited by TJM 25 A
IA T
C = 25°C 12 A
EAS T
C = 25°C 1.5 J
PD T
C = 25°C 400 W
TJ -55...+150 ° C
TJM 150 ° C
Tstg -55...+150 ° C
TL 1.6mm (0.063 in.) from Case for 10s 300 ° C
TSOLD Plastic Body for 10s 260 ° C
Md Mounting Torque 1.13/10 Nm/lb.in.
Weight 6 g
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH12N100L
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs V
DS = 20V, ID = 0.5 • IDSS, Note 1 3.0 5.0 S
Ciss 2500 pF
Coss V
GS = 0V, VDS = 25V, f = 1MHz 300 pF
Crss 95 pF
td(on) 30 ns
tr 55 ns
td(off) 110 ns
tf 65 ns
Qg(on) 155 nC
Qgs V
GS = 20V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 35 nC
Qgd 55 nC
RthJC 0.31 °C/W
RthCS 0.21 °C/W
Safe-Operating-Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA V
DS = 800V, ID = 0.25A, TC = 60°C 200 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IS V
GS = 0V 12 A
ISM Repetitive, Pulse Width Limited by TJM 48 A
VSD I
F = IS, VGS = 0V, Note 1 1.5 V
trr 1000 ns
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
RG = 4.7Ω (External)
IF = IS, -di/dt = 100A/μs, VR = 100V, VGS = 0V
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
© 2010 IXYS CORPORATION, All Rights Reserved
IXTH12N100L
Fi g . 1. Ou tp ut Ch aracteri stics @ T
J
= 25ºC
0
2
4
6
8
10
12
0 2 4 6 8 10 12 14 16
V
DS
- Volts
I
D
- Ampere s
V
GS
= 20V
12V
10V
7
V
8
V
6
V
9
V
Fi g . 2. Exte n d ed Ou tput Char acter i s ti cs @ T
J
= 25ºC
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amper es
V
GS
= 20V
12V
9
V
8
V
7
V
6
V
10
V
Fi g . 3. Ou tp ut Ch aracteri stics @ T
J
= 125º C
0
2
4
6
8
10
12
0 5 10 15 20 25 30 35
V
DS
- Volts
I
D
- Amperes
V
GS
= 20V
10V
9
V
7V
8V
6V
5V
Fig. 4. R
DS(on)
No r mal i zed to I
D
= 6A Valu e vs.
Junction Tem perature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Deg ree s Cent i grade
R
DS(on)
- Normalized
V
GS
= 20V
I
D
= 12A
I
D
= 6A
Fig. 5. R
DS(on)
No r mal i zed to I
D
= 6A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 2 4 6 8 101214161820
I
D
- Ampere s
R
DS(on)
- Normalized
V
GS
= 20V T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maxi mu m D r ai n Cu r r en t v s.
Case Temper ature
0
2
4
6
8
10
12
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTH12N100L
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5
V
GS
- V olts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Tr ansconductance
0
1
2
3
4
5
6
7
8
9
10
0246810121416
I
D
- Ampe re s
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
4
8
12
16
20
24
28
32
36
0.30.40.50.60.70.80.91.01.11.2
V
SD
- V olts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gat e C h ar g e
0
2
4
6
8
10
12
14
16
18
20
0 20406080100120140160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 6A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: T_12N100L(7N)4-19-10-A
IXTH12N100L
Fig. 13. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
0.1
1
10
100
10 100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
Fig. 14. Forward-Bias Safe Operating Area
@ T
C
= 60ºC
0.1
1
10
100
10 100 1,000 10,000
V
DS
- V o lts
I
D
- Amperes
T
J
= 150ºC
T
C
= 60ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
