©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
35A, 12 00V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, po wer suppl ies and driv e r s for sol en oid s , relays
and contactors.
Formerly Developmental Type TA49290.
Symbol
Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
•Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging JEDEC STYL E T O-247
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG10N120BN TO-247 G10N120BN
HGTP10N120BN TO-220AB 10N120BN
HGT1S10N120BNS TO-263AB 10N120BN
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNST.
C
E
G
G
C
E
COLLECTOR
(FLANGE)
G
COLLECTOR E
(FLANGE) C
GCOLLECTOR
E
(FLANGE)
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet Au gust 2002
©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG10N120BN
HGTP10N120BN
HGT1S10N120BNS UNITS
Collect o r to Em itter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I C25 35 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 17 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Fig u r e 2) . . . . . . . . . . . . . . . . . . . . . . . SSO A 55A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD298 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 80 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
P ackage Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
Short Circuit Withstand Time (Note 3) at V GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8µs
Short Circuit Withstand Time (Note 3) at V GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs
CAUTION: St resses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a stress on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 20A, L = 400µH, TJ = 25oC.
3. VCE(PK) = 840V, TJ = 125oC, RG = 10Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V
Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V
Collector to Emitter Leakage Current ICES VCE = 1200V TC = 25oC - - 250 µA
TC = 125oC - 150 - µA
TC = 150oC--2mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 10A,
VGE = 15V TC = 25oC - 2.45 2.7 V
TC = 150oC-3.74.2V
Gate to Emitter Threshold Voltage VGE(TH) IC = 90µA, VCE = VGE 6.0 6.8 - V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V,
L = 400µH, VCE(PK) = 1200V 55 - - A
Gate to Emitter Plateau Voltage VGEP IC = 10A, VCE = 600V - 10.4 - V
On-State Gate Charge QG(ON) IC = 10A,
VCE = 600V VGE = 15V - 100 120 nC
VGE = 20V - 130 150 nC
HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS
©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = 10A
VCE = 960V
VGE = 15V
RG = 10Ω
L = 2mH
Test Circuit (Figure 18)
-2326ns
Current Rise Time trI -1115ns
Current Turn-Off Delay Time td(OFF)I - 165 210 ns
Current Fall Time tfI - 100 140 ns
Turn-On Energy (Note 5) EON1 -0.320.4 mJ
Turn-On Energy (Note 5) EON2 -0.851.1 mJ
Turn-Off Energy (Note 4) EOFF -0.81.0mJ
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC
ICE = 10A
VCE = 960V
VGE = 15V
RG = 10Ω
L = 2mH
Test Circuit (Figure 18)
-2125ns
Current Rise Time trI -1115ns
Current Turn-Off Delay Time td(OFF)I - 190 250 ns
Current Fall Time tfI - 140 200 ns
Turn-On Energy (Note 5) EON1 -0.40.5mJ
Turn-On Energy (Note 5) EON2 -1.752.3 mJ
Turn-Off Energy (Note 4) EOFF -1.11.4mJ
Thermal Resistance Junction To Case RθJC - - 0.42 oC/W
NOTES:
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
0
10
25 75 100 125 150
25
30
15
5
VGE = 15V
20
35
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
40
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
20
600 800400200 1000 1200
0
50
60
30
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH
HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS
©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR T O EM ITTER ON-STATE V OLTAGE FIGURE 6. COLLECTOR T O EM ITTER ON-STAT E VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT O R T O
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR T O
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (C ontinu e d)
ICE, COLLECTO R TO EMITTER CURRENT (A)
TJ = 150oC, RG = 10Ω, L = 2mH, VCE = 960V
fMAX, OPERATING FREQUENCY (kHz)
2
1
10
2010
50
5
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.42 oC/ W, SEE NOT ES
PC = CONDUCTION DISSIPA T ION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TC = 75oC, VGE = 15V, IDEAL DIODE
TCVGE
110oC12V
15V
15V
75oC
110oC
75oC12V
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT C IRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
12 13 14 15 16
5
10
15
20
50
100
150
250
tSC ISC
25
200
VCE = 840V, RG = 10Ω, TJ = 125oC
024
VCE, COLLECTOR TO EMITTER VOLTA GE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
10
30
6810
40
50
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 12V
TC = -55oCTC = 25oC
TC = 150oC
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
20
30
40
0246810
10
50
0
TC = -55oC
TC = 25oC
TC = 150oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
EON2, TURN-ON ENERGY LOSS (mJ)
4
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
2
50
5
10
015 20
TJ = 25oC, VGE = 12V, VGE = 15V
RG = 10Ω, L = 2mH, VCE = 960V
1
TJ = 150oC, VGE = 12V, VGE = 15V 1.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
050
1.0
0.5
2.0
10
RG = 10Ω, L = 2mH, VCE = 960V
TJ = 25oC, VGE = 12V OR 15V
TJ = 150oC, VGE = 12V OR 15V
15 20
HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS
©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR T O
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECT OR T O
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECT OR T O
EMITTER CURRENT FIGURE 12. FALL TIME vs COLL ECT OR T O EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (C ontinu e d)
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
0
15
20
25
30
35
5
40
15 20
RG = 10Ω, L = 2mH, VCE = 960V
TJ = 25oC, TJ = 150oC, VGE = 12V
TJ = 25oC, TJ = 150oC, VGE = 15V
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
0
10
30
20
15010520
40
50 RG = 10Ω, L = 2mH, VCE = 960V
TJ = 25oC OR TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, V GE = 12V
0
250
5
100
200
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
15
400
300
350
20
RG = 10Ω, L = 2mH, VCE = 960V
10
VGE = 12V, VGE = 15V, TJ = 25oC
VGE = 12V, VGE = 15V, TJ = 150oC
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
0
50
150
200
5
100
250
300
201510
TJ = 25oC, VGE = 12V OR 15V
TJ = 150oC, VGE = 12V OR 15V
RG = 10Ω, L = 2 mH, VCE = 960V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
40
138 9 10 12
VGE, GATE TO EMITTER VOLTAGE (V)
11
60
80
14 15
100
TC = 150oC
TC = -55oC
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 20V
20
TC = 25oC
7
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
5
20
006020 80
VCE = 800V
IG (REF) = 1mA, RL = 60Ω, TC = 25oC
VCE = 1200V
10
15
120
VCE = 400V
100
40
HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS
©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
FIGURE 15. CAPACITANCE vs COLLECT OR T O EMITTER
VOLTAGE FIGURE 16. COLLECTO R TO EMITTER ON-STATE VOLTAGE
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Typical Performance Curves Unless Otherwise Specified (Continu e d)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
CRES
0 5 10 15 20 25
0
1
CIES
COES
3
4FREQUENCY = 1MHz
2
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
6
12
01
02
3
15 DUTY CYCLE <0.5%, TC = 110oC
PULSE DURATION = 250µs
9
34
VGE = 10V
VGE = 15V
t1
t2
PD
SINGLE PULSE
t1, RECTANGULAR PULSE DURATION (s)
10-2
10-1
100
10-5 10-3 10-2 10-1 100
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
ZθJC, NORMALIZED THERMAL RESPONSE
0.5
0.2
0.1
0.05
0.02
0.01
Test Circuit and Waveforms
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS
RG = 10Ω
L = 2mH
VDD = 960V
+
-
HGTG10N120BND
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS
©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the elec trostatic discharge of
energy through the devices. When handling these devi ces,
care should be exercised to assure that the static charge
bui lt in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production b y nume rous equipment m anuf acturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assem b ly int o a circui t, all l eads s hould be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When de vice s are remov ed by hand from thei r carriers,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. De vices sho uld n e v er b e ins erted into or remo v e d from
circuits with power on.
5. Gate Voltage Rating - Ne v er e xceed the gate- vol tage
rating of VGEM. Exceedi ng the ra ted VGE can result i n
permanent damage to the oxide layer in the gate region .
6. Gate Terminatio n - The gates of these de vi ces are
essentially capacitors. Circuits that leave the gate open-
circuit ed or floating shoul d be a v oide d. Thes e condi tions
can resu lt i n turn-on of th e device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is pres ented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the inf o rmation s hown f o r a typical un it in Figure s 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are def ined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowab le dissipation (PD) is defined b y PD=(T
JM -T
C)/RθJC.
The sum of device switching and con duc ti on lo sses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the condu cti on lo sse s (PC) are approximated by
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 19. EON2 is the integ r al of the
instantaneous power loss (ICE x VCE) dur ing t urn-on and
EOFF is the integr al of the instan tan eou s po wer loss
(ICE xV
CE) during turn-off . All tai l los se s are incl ude d in the
calculation for EOFF; i.e., the collector current eq uals zer o
(ICE = 0).
HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
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OPTOPLANAR
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FACT Quiet Series
FASTâ
FASTr
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GlobalOptoisolator
GTO
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Rev. I1
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EnSignaTM
PACMAN
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PowerTrenchâ
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QT Optoelectronics
Quiet Series
RapidConfigure
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SILENT SWITCHERâ
SMART START
SPM
Stealth
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