D3SB10 - D3SB80 SILICON BRIDGE RECTIFIERS
PRV : 100 - 800 Volts
Io : 4.0 Amperes
FEATURES :
* Hi
h current ca
abilit
* Hi
h sur
e current ca
abilit
* Hi
h reliabilit
* Low reverse curren
* Low forward volta
e dro
* Ideal for
rinted circuit board
* Ver
ood heat dissi
ation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizin
molded
lastic techni
ue
* E
ox
: UL94V-O rate flame retardant
* Terminals : Plated lead solderable
er
MIL-STD-202, Method 208
uaranteed
* Polarit
: Polarit
s
mbols marked on case
* Mountin
osition : An
* Weight : 4.28 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTIC
Ratin
at 25
C ambient tem
erature unless otherwise s
ecifi
.
Sin
le
hase, half wave, 60 Hz, resistive or inductive loa
For ca
acitive load, derate current b
20
SYMBOL D3S
B10 D3S
B20 D3S
B40 D3S
B60 D3S
B80 UNIT
Maximum Reverse Voltage VRM 100 200 400 600 800 V
Maximum Average Forward Current Tc = 25°CIF(AV) 4.0 A
Maximum Peak Forward Surge Current IFSM 120 A
Maximum Forward Voltage per Diode at IF = 2.0 A VF1.05 V
Maximum Reverse Current at Reverse Voltage IR10 μA
Maximum Reverse Current at Reverse Voltage Ta = 100 °CIR(H) 100 μA
Operating Junction Temperature Range TJ - 40 to + 150 °C
Storage Temperature Range TSTG - 40 to + 150 °C
Page 1 of 2 Rev. 02 : March 25, 2005
RATING
Dimensions in inches and (millimeters)
0.303 (7.7)
0.287 (7.3)
0.075 (1.9)
0.060 (1.5)
0.043 (1.1)
0.134(3.4)
0.122(3.1)
~~
+
0.150 (3.8)
0.134 (3.4)
0.383(9.7)
0.367(9.3)
0.996 (25.3)
0.972 (24.7)
C3
0.709 (18)
0.669 (17)
0.603(15.3)
0.579(14.7)
0.189 (4.8)
0.173 (4.4)
0.032 (0.8)
0.043 (1.1)
0.130(3.7)
0.146(3.3)
0.114 (2.9)
0.098 (2.5)
RBV4
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.eicsemi.com