FAAMOSPEC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS ... designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * DC Current Gain hFE = 3500(Typ) @ |, = 10A * Monolithic Construction with Built-in Base-Emitter Shunt Resistor MAXIMUM RATINGS PNP NPN MJ4030 MJ4033 MJ4031 MJ4034 MJ4032 MJ4035 16 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 60-100 VOLTS 150 WATTS Characteristic Symbol | MJ4030 | MJ4031 | MJ4032 | Unit MJ4033 | MJ4034 | MJ4035 Coiliector-Emitter Voltage Voro 60 80 100 V COllector-Base Voltage Vero 60 80 100 V Emitter-Base Voltage VeBo 5.0 Vv Collector Current-Continuous le 16 A -Peak lom 20 Base Current ls 0.5 A Total Power Dissipation @T,= 25C Pp 150 Ww Derate above 25C 0.857 wrc Operating and Storage Junction T, .Tst C Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermai Resistance Junction to Case Reje 1.17 CW FIGURE -1 POWER DERATING = an o = N a 8 on Qo PN 175 200 & P,, POWER DISSIPATION(WATTS) a Oo o 2 50 75 100 125 150 Te , TEMPERATURE(C) PIN 1.BASE 2. EMITTER COLLECTOR(CASE) MILLIMETERS DIM MIN MAX A 38.75 | 39.96 B 19.28 | 22.23 Cc 7.96 9.28 D 11.18 | 12.19 E 2.20 | 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 | 3.40 l 16.64 | 17.30 J 3.88 4.36 K 10.67 | 11.18MJ4030, MJ4031, MJ4032 PNP / MJ4033, MJ4034, MJ4035 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwse noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Vegoisus) V (I, = 100 mA, I, =0) MJ4030,MJ4033 60 MJ4031 ,MJ4034 80 MJ4032,MJ4035 100 Collector Cutoff Current lceo mA (Ve, = 30 V, I, = 0) MJ4030,MJ4033 3.0 (Ve, = 40 V, I, = 0) MJ4031 ,MJ4034 3.0 (Veg = 50 V, I, = 0) MJ4032,MJ4035 3.0 Collector-Emitter Leakage Current loer mA (Veg = 60 V, Ra, = 1.0k ohm ) MJ4030,MJ4033 1.0 (Ve, = 80 V, Rg = 1.0k ohm ) MJ4031 ,MJ4034 1.0 (Veg = 100 V, Rag = 1.0k ohm ) MJ4032,MJ4035 1.0 ( Veg = 60 V, Ry, = 1.0k ohm , T, = 150C ) MJ4030,MJ4033 5.0 ( Veg = 80 V, Ryg = 1.0k ohm , T, = 150C ) MJ4031,MJ4034 5.0 ( Veg = 100 V, Rag = 1.0k ohm ,T, = 150C ) MJ4032,MJ4035 5.0 Emitter Cutoff Current leso mA -( Veg = 5.0 V,1,= 0 ) 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (1g = 10A, Veg = 3.0 V) 1000 Coliector-Emitter Saturation Voltage Voeisat) Vv (I, = 10A, I, = 40 mA) 2.5 (Ig = 16 A, I, = 80 mA) 4.0 Base-Emitter On Voltage Vese{on) Vv (Ie = 10 A, Veg =3.0V) 3.0 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0%MJ4030,31,32 PNP / MJ4033,34,35 NPN bre , OC CURRENT GAIN lc , COLLECTOR CURRENT (Amp) DC CURRENT GAIN 002 4005 04 02 0.5 1 ic , COLLECTOR CURRENT (AMP) 2 10 ACTIVE-REGION SAFE OPERATING AREA (SOA) T,e200C - Bondng Wire Linit Second Breakdown Limit Thermally Limited atT.=25C (Single Puse) 2 5 10 20 50 Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) V VOLTAGE (VOLTS) 0.02 0.05 100 20 "ON" VOLTAGE Veecean @lc/g250 0.1 GAIN(NORMALIZED) Vec@Vce*3V 02 0.5 SMALL-SIGNAL CURRENT GAIN 10 10 10 1 f , FREQUENCY (kHz) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Io-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Voeceaty @ !c/lp=250 1 2 10 20 IC , COLLECTOR CURRENT (AMP)