2SK2645-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 600 9 32 35 9 71.9 50 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=1.63mH, Vcc=60V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V VGS=0V VGS=35V VDS=0V ID=4.5A VGS=10V Min. 600 3.5 Tch=25C Tch=125C ID=4.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=9A VGS=10V 2.5 RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. 4.0 10 0.2 10 1.0 5.0 900 150 70 25 70 60 35 Max. 4.5 500 1.0 100 1.2 1400 230 110 40 110 90 60 9 1.0 550 7.0 1.5 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. Units 2.5 62.5 C/W C/W 1 2SK2645-01MR FUJI POWER MOSFET Characteristics Power Dissipation PD=f(Tc) 70 Safe operating area ID=f(VDS):D=0.01,Tc=25C 60 10 1 t=0.01 s DC 50 1s ID [A] PD [W] 10 s 40 30 10 100 s 0 1ms 10ms 20 10 -1 t D= 10 100ms t T T 0 0 50 100 10 150 -2 10 0 10 1 10 o 2 10 3 VDS [V] Tc [ C] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 20 VGS=20V 10V 10 7V 10 nd e mm 6.5V 5 eco 0 10 -1 10 -2 . de 1 n sig ew n for ID [A] ID [A] 10 8V 15 6V 0 0 5 10 tr No 15 20 5.5V 5V 25 30 35 0 1 2 3 VDS [V] 4 5 6 7 8 9 10 VGS [V] Typical drain-source on-state resistance Typical forward transconductance RDS(on)=f(ID):80s Pulse test, Tch=25C gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C 9 VGS= 5V 5.5V 6V 8 6.5V 7V 7 10 1 gfs [s] RDS(on) [ ] 6 10 0 5 4 3 8V 2 10V 20V 1 10 0 -1 10 -1 10 0 10 1 0 ID [A] 5 10 15 20 ID [A] http://store.iiic.cc/ 2 2SK2645-01MR FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 4.0 6.0 3.5 5.0 3.0 max. 4.0 2.0 VGS(th) [V] RDS(on) [ ] 2.5 max. 1.5 typ. typ. min. 3.0 2.0 1.0 1.0 0.5 0.0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical capacitances C=f(VDS):VGS=0V,f=1MHz Typical gate charge characteristic VGS=f(Qg):ID=9A,Tch=25C 10n 50 500 Vcc=480V 450 45 400 40 0V 12 c= V Vc 300 V 0 48 300V VDS [V] 30 25 250 . de 1n n sig ew n for VGS [V] 300 35 C [F] 350 Ciss nd e mm 20 200 Coss 100p 150 15 120V 100 50 0 0 20 40 ot N 60 80 o c e r 100 120 Crss 10 5 10p 0 140 10 -2 10 -1 10 0 10 1 10 2 VDS [V] Qg [nC] Forward characteristic of reverse of diode Avalanche energy derating IF=f(VSD):80s Pulse test,VGS=0V Eas=f(starting Tch):Vcc=60V,IAV=9A 100 10 1 80 o Tch=25 C typ. 10 Eas [mJ] IF [A] 60 10 0 40 -1 20 10 0 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 o VSD [V] Starting Tch [ C] http://store.iiic.cc/ 3 2SK2645-01MR 1 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 D=0.5 0 Zthch-c [K/W] 10 0.2 0.1 0.05 10 0.02 -1 t D= 0.01 t T T 0 -2 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4