IRLML2402
PD - 91257D
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
VDSS = 20V
RDS(on) = 0.25Ω
HEXFET® Power MOSFET
Description
01/15/03
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel MOSFET
lSOT-23 Footprint
lLow Profile (<1.1mm)
lAvailable in Tape and Reel
lFast Switching
S
D
G
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 1.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 0.95 A
IDM Pulsed Drain Current 7.4
PD
@TA = 25°C Power Dissipation 540 mW
Linear Derating Factor 4.3 mW/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient 230
Thermal Resistance
°C/W
Micro3
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IRLML2402
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient 0.024 V/°C Reference to 25°C, ID = 1mA
0.25 VGS = 4.5V, ID = 0.93A
0.35 VGS = 2.7V, ID = 0.47A
VGS(th) Gate Threshold Voltage 0.70 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 1.3 S VDS = 10V, ID = 0.47A
1.0 VDS = 16V, VGS = 0V
25 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage -100 VGS = -12V
Gate-to-Source Reverse Leakage 100 VGS = 12V
QgTotal Gate Charge 2.6 3.9 ID = 0.93A
Qgs Gate-to-Source Charge 0.41 0.62 nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge 1.1 1.7 VGS = 4.5V, See Fig. 6 and 9
td(on) Turn-On Delay Time 2.5 VDD = 10V
trRise Time 9.5 ID = 0.93A
td(off) Turn-Off Delay Time 9.7 RG = 6.2Ω
tfFall Time 4.8 RD = 11Ω, See Fig. 10
Ciss Input Capacitance 110 VGS = 0V
Coss Output Capacitance 51 pF VDS = 15V
Crss Reverse Transfer Capacitance 25 = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.2 V TJ = 25°C, IS = 0.93A, VGS = 0V
trr Reverse Recovery Time 25 38 ns TJ = 25°C, IF = 0.93A
Qrr Reverse RecoveryCharge 16 24 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
7.4
0.54
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 0.93A, di/dt ≤ 90A/µs, VDD ≤ V
(BR)DSS,
TJ ≤ 150°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
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IRLML2402
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1 1 10
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
20µs P ULSE W IDTH
T = 25°C
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
J
0.01
0.1
1
10
100
0.1 1 10
I , Drai n-to-Sourc e Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20µs P ULSE W IDTH
T = 150°C
J
0.01
0.1
1
10
1.5 2.0 2.5 3.0 3.5 4.0
T = 25°C
T = 150°C
J
J
GS
V , Gate -to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resis tance
DS(on)
(Normalized)
A
V = 4.5V
GS
I = 0.93A
D
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IRLML2402
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
40
80
120
160
200
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
os s ds gd
C
iss
C
oss
C
rss
0
2
4
6
8
10
0.0 1.0 2.0 3.0 4.0
G
GS
A
Q , Total Gate Cha rge (nC)
FOR T EST CIRCUIT
SEE FIGURE 9
V , Gate-to-Source Voltage (V)
I = 0.93A
V = 16V
D
DS
0.01
0.1
1
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
0.1
1
10
100
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Singl e Pu l s e
100µs
1ms
10ms
A
A
J
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IRLML2402
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
4.5V
Fig 9b. Gate Charge Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa cto r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , R ecta ngular P ulse D ur ation (s ec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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IRLML2402
Fig 12. For N-Channel HEXFETS
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
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IRLML2402
Micro3 (SOT-23 / TO-236AB)
Dimensions are shown in millimeters (inches)
Part Marking Information
Package Outline
L EAD ASSIGNMENTS
1 - GATE
2 - SOURCE
3 - DRAIN
L
3X 3X
C
θ
A1
- C -
B 3X
A
e
e1
0.008 (.003)
3
12
E
- A -
- B -
D
H
0.20 ( .008 ) M A M
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .032 .044 0.82 1.11
A1 .001 .004 0.02 0.10
B .015 .021 0.38 0.54
C .004 .006 0.10 0.15
D .105 .120 2.67 3.05
e .0750 BASIC 1.90 BASIC
e1 .0375 BASIC 0.95 BASIC
E .047 .055 1.20 1.40
H .083 .098 2.10 2.50
L .005 .010 0.13 0.25
θ
0° 8° 0° 8°
0.10 (.004) M C A S B S
MINIMUM RECOMMENDED F OOT PRINT
0.80 ( .031 )
3X
2.00
( .079 )
0.95 ( .037 )
2X
0.90
( .035 )
3X
3
3
3
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro3 (SOT-23 / TO-236AB)
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IRLML2402
Tape & Reel Information
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4. 1 ( .16 1 )
3. 9 ( .15 4 )
1. 6 ( .0 62 )
1. 5 ( .0 60 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4. 1 ( .1 61 )
3. 9 ( .1 54 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7 .008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFOR M S T O EIA-481 & EIA-541.
Micro3 (SOT-23 / TO-236AB)
Dimensions are shown in millimeters (inches)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/03
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