IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 Silicon N-channel IGBT 3300V E3 version FEATURES Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. Low driving power due to low input capacitance MOS gate. Low noise recovery: Ultra soft fast recovery diode. High thermal fatigue durability: (delta Tc=70K, N>30,000cycles) AlSiC base-plate/AlN substrate o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Unit Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) +0 Notes: (1) Recommended Value 1.80.2/15 -3N*m MBN1500E33E3 V V 3,300 20 o 1,500 (Tc=95 C) A 3,000 1,500 A 3,000 o C -40 ~ +150 o C -40 ~ +125 VRMS 6,000(AC 1 minute) 2/15 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Symbol Unit Collector Emitter Cut-Off Current I CES mA Gate Emitter Leakage Current IGES nA Collector Emitter Saturation Voltage VCE(sat) Gate Emitter Threshold Voltage Input Capacitance Internal Gate Resistance Rise Time Turn On Time Switching Times Fall Time Turn Off Time VGE(TO) Cies Rge tr ton tf toff V nF VFM V trr s Peak Forward Voltage Drop Reverse Recovery Time V s Min. Typ. Max. -500 2.70 5.5 1.6 2.1 1.1 2.8 2.30 - 20 2.45 3.20 3.40 6.3 195 0.9 2.1 3.2 2.1 4.6 2.50 2.70 2.60 12 60 +500 3.70 7.5 2.8 4.0 3.3 5.8 3.10 - - 0.9 1.4 Test Conditions o VCE=3,300V, VGE=0V, Tj=25 C o VCE=3,300V, VGE=0V, Tj=125 C o VGE=20V, VCE=0V, Tj=25 C o IC=1,500A, VGE=15V, Tj=25 C o IC=1,500A, VGE=15V, Tj=125 C o IC=1,500A, VGE=15V, Tj=150 C o VCE=10V, IC=1,500mA, Tj=25 C o VCE=10V, VGE=0V, f=100kHz, Tj=25 C o VCE=10V, VGE=0V, f=100kHz, Tj=25 C VCC=1,650V, Ic=1,500A L=100nH RG=2.7/2.7, CGE=330nF (3) o VGE=15V, Tj=125 C o IF=1,500A, VGE=0V, Tj=25 C o IF=1,500A, VGE=0V, Tj=125 C o IF=1,500A, VGE=0V, Tj=150 C Vcc=1,650V, IF=1,500A, L=100nH o Tj=125 C Eon(10%) 2.9 3.6 o Tj=125 C 3.2 Eon(full) o 3.7 Tj=150 C Eoff(10%) 2.3 2.9 o Tj=125 C Turn Off Loss J/P 2.9 Eoff(full) o 3.0 Tj=150 C Err(10%) 1.5 2.0 o Tj=125 C Reverse Recovery Loss J/P 2.0 Err(full) o 2.5 Tj=150 C Notes:(3) RG and CGE value are the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. Turn On Loss J/P http://store.iiic.cc/ VCC=1,650V, Ic=1,500A, L=100nH, RG=2.7/2.7, CGE=330nF (3) VGE=15V P1 IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 THERMAL CHARACTERISTICS Thermal Impedance IGBT FWD Rth(j-c) Rth(j-c) K/W - Contact Thermal Impedance Rth(c-f) K/W - - 0.0078 Junction to case 0.0156 Case to fin (grease=1W/(mK), 0.005 heat-sink flatness 50um) DEFINITION OF TEST CIRCUIT Ls LLOAD Vcc Rg G/D Cge Fig.1 Switching test circuit Ic Vce Ls= VL t 0 VL dIc d t=tL ( ) tL Fig.2 Definition of stray inductance Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 Vge 10% t1 10% 10% 10% t t tr ton t3 t4 t2 0 0 10% 90% t5 t7 t8 trr IF -Ic t6 t9 t8 IcVce dt t3 Eoff(10%)= IcVce dt Eoff(Full)= Err(10%)= t7 IcVce dt t5 Fig.3 Definition of switching loss http://store.iiic.cc/ t11 t12 t10 t12 IFVce dt t11 t6 IcVce dt t1 t tf toff t2 Eon(Full)= t t Vge t4 Eon(10%)= 0.5Irm 0.1IF 0 t10 Err(Full)= IFVce dt t9 P2 IGBT MODULE P3 Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 STATIC CHARACTERISTICS TENTATIVE TENTATIVE 3,000 Tj=25 VGE=15V 3,000 Tj=125 13V 2,500 VGE=15V 13V 2,500 11V 2,000 Collector Current, IC(A) Collector Current, IC(A) 11V 1,500 2,000 1,500 9V 1,000 1,000 9V 500 500 7V 7V 0 0 0 2 4 0 6 2 4 6 Collector-Emitter Voltage, VCE(V) Collector-Emitter Voltage, VCE(V) Collecter Current vs. Collector to Emitter Voltage Collecter Current vs. Collector to Emitter Voltage TENTATIVE TENTATIVE 3000 3000 Tj=150 VGE=15V VGE=0V 13V Tj=25 2500 2500 2000 Forward Current, IF(A) Collector Current, IC(A) 11V 1500 9V 1000 2000 1500 Tj=125 1000 Tj=150 500 500 7V 0 0 0 2 4 6 0 1 2 3 4 Forward Voltage, VF(V) Collector-Emitter Voltage, VCE(V) Collecter Current vs. Collector to Emitter Voltage http://store.iiic.cc/ Forward Voltage of free-wheeling diode 5 IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 DYNAMIC CHARACTERISTICS TYPICAL 10.0 TYPICAL 6.0 Conditions Conditions Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=125 9.0 8.0 Eon(full) 150) Conditions Conditions Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=125 5.5 5.0 V CE Eoff(full) (150 ) IC IC V CE 7.0 0 10% 10% 10% V GE 0 t4 t2 t1 t3 6.0 Eon(full) T4 Eon(10%) = (IC x VCE) dt T3 T2 Eon( full ) = (IC x VCE) dt 5.0 T1 4.0 Turn-off Loss, Eoff(J/pulse) Turn-on Loss, Eon(J/pulse) 4.5 0 4.0 10% t V GE Eoff(full) 0 t5 t7 3.5 t8 t6 T8 Eoff (10%) = (IC x VCE) dt T7 T6 Eoff ( full ) = (IC x VCE) dt T5 3.0 2.5 Eoff(10%) 2.0 3.0 Eon(10%) 1.5 2.0 1.0 1.0 0.5 0.0 0.0 0 500 1000 1500 2000 2500 3000 0 500 Collector Current, IC(A) 1000 1500 2000 Turn-on Loss vs. Collector Current 3000 Turn-off Loss vs. Collector Current TYPICAL TYPICAL 6.0 3.5 Conditions Conditions Conditions Conditions Err(full) (150 ) Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=125 Ls=100nH Vcc=1650V VG=15V RG=2.7 CGE=330nF Tc=125 5.0 Switching time, ton, tr, toff, tf, trr (s) 3.0 Reverse Recovery Loss, Err(J/pulse) 2500 Collector Current, IC(A) 2.5 Err(full) 2.0 1.5 Err(10%) 1.0 V CE 0.1V CE IRM 0 ton 4.0 toff 3.0 tr 2.0 0.1IF tf t IF - IC t12 t9 1.0 0.5 t11 Err (10%) = T12 T11 Err ( full ) = T10 T9 trr t10 (IC x VCE) dt (IC x VCE) dt 0.0 0.0 0 500 1000 1500 2000 2500 3000 Forward Current, IF(A) 0 500 1000 1500 2000 2500 Collector Current, IC(A) Switching time vs. Collector current Recovery Loss vs. Forward Current http://store.iiic.cc/ 3000 P4 IGBT MODULE P5 Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 TYPICAL 7.0 Conditions Conditions Ls=100nH Vcc=1650V IC=1500A VG=15V CGE=330nF Tc=125 6.0 Eon(full) Turn-on Loss, Eon(J/pulse) 5.0 4.0 3.0 Eon(10%) 2.0 V CE IC 10% 10% 0 V GE 0 1.0 t1 t3 t4 t2 T4 Eon(10%) = (IC x VCE ) dt T3 T2 Eon( full ) = (IC x VCE) dt T1 0.0 0 1 2 3 4 5 6 7 Gate Resistance, RG() Turn-on Loss vs. Gate Resistance TYPICAL TYPICAL 4.0 3.0 Conditions Conditions Conditions Conditions Ls=100nH Vcc=1650V IC=1500A VG=15V CGE=330nF Tc=125 3.5 Ls=100nH Vcc=1650V IC=1500A VG=15V CGE=330nF Tc=125 2.5 Reverse Recovery Loss, Err(J/pulse) 3.0 Turn-off Loss, Eoff(J/pulse) Eoff(full) 2.5 Eoff(10%) 2.0 1.5 IC 1.0 V CE 10% 0 Err(full) 2.0 1.5 Err(10%) 1.0 IRM t V GE V CE 0.1V CE 10% 0.1IF 0 t 0 IF 0.5 0.5 t5 t7 - IC t12 t9 t8 t6 t11 T8 Eoff (10%) = (IC x VCE ) dt Err(10%) = T7 T12 T11 T6 Eoff ( full ) = (IC x VCE ) dt Err( full ) = T5 T10 T9 0.0 t10 (IC x VCE ) dt (IC x VCE ) dt 0.0 0 1 2 3 4 5 6 7 Gate Resistance, RG() 0 1 2 3 4 5 Gate Resistance, RG() Turn-off Loss vs. Gate Resistance Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 6 7 IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 OUTLINE DRAWINGS Unit in mm Label Weight: 1300(g) C C C C G E E E Circuit diagram Baseplate flatness test (1) Convex measurement Convex max +250 E (2) 8 points gap measurement Gap +50m m m m 6. 25 m m 01 1 122mm 158.2mm 160mm Convex measurement area Base gap measurement points http://store.iiic.cc/ P6 IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 TRANSIENT THERMAL IMPEDANCE Maximum Transient thermal impedance : Rth(j-c) (K/W) 0.1 FWD 0.01 I GBT 0.001 0.0001 0.001 0.01 0.1 1 Time : t(s) Transient Thermal Impedance Curve http://store.iiic.cc/ 10 P7 IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 QG-VG CURVE TYPICAL Conditions:Ls=100nH, VCC=1650V, IC=1500A, o VGE=+/-15V, Tj=25 C 15 10 VGE (V) 5 0 -5 -10 -15 -12 -10 -8 -6 -4 -2 0 2 C) QG ( 4 6 8 10 12 QG-VGE curve Negative environmental impact material Please note the following materials are contained in the product, in order to keep characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ P8 IGBT MODULE Spec.No.IGBT-SP-10002 R2 MBN1500E33E3 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. 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