MBN1500E33E3 - Hitachi - Datasheet.Wiki

IGBT MODULE Spec.No.IGBT-SP-10002 R2

P1

MBN1500E33E3

Silicon N-channel IGBT 3300V E3 version

FEATURES

∗ Soft switching behavior & low conduction loss:

Soft low-injection punch-through High conductivity IGBT.

∗ Low driving power due to low input capacitance MOS gate.

∗ Low noise recovery: Ultra soft fast recovery diode.

∗ High thermal fatigue durability:

(delta Tc=70K, N>30,000cycles)

AlSiC base-plate/AlN substrate

ABSOLUTE MAXIMUM RATINGS (Tc=25

oC

)

Item Symbol Unit MBN1500E33E3

Collector Emitter Voltage V

CES

V 3,300

Gate Emitter Voltage V

GES

V ±20

DC I

C

1,500

(Tc=95

o

C)

Collector Current 1ms I

Cp

A 3,000

DC I

F

1,500

Forward Current 1ms I

FM

A 3,000

Junction Temperature T

j

o

C -40 ~ +150

Storage Temperature T

stg

o

C -40 ~ +125

Isolation Voltage V

ISO

V

RMS

6,000(AC 1 minute)

Terminals

(M4/M8)

- 2/15 (1)

Screw Torque Mounting

(M6)

- N·m 6 (2)

Notes: (1) Recommended Value 1.8±0.2/15

+0-3

N·m (2) Recommended Value 5.5±0.5N·m

ELECTRICAL CHARACTERISTICS

Item Symbol

Unit

Min.

Typ.

Max.

Test Conditions

- - 12 V

CE

=3,300V, V

GE

=0V, Tj=25

o

C

Collector Emitter Cut-Off Current I

CES

mA - 20 60 V

CE

=3,300V, V

GE

=0V, Tj=125

o

C

Gate Emitter Leakage Current I

GES

nA -500

- +500

V

GE

=±20V, V

CE

=0V, Tj=25

o

C

- 2.45

- I

C

=1,500A, V

GE

=15V, Tj=25

o

C

2.70

3.20

3.70

I

C

=1,500A, V

GE

=15V, Tj=125

o

C

Collector Emitter Saturation Voltage V

CE(sat)

V - 3.40

- I

C

=1,500A, V

GE

=15V, Tj=150

o

C

Gate Emitter Threshold Voltage V

GE(TO)

V 5.5 6.3 7.5 V

CE

=10V, I

C

=1,500mA, Tj=25

o

C

Input Capacitance C

ies

nF - 195

- V

CE

=10V, V

GE

=0V, f=100kHz, Tj=25

o

C

Internal Gate Resistance Rge Ω - 0.9 - V

CE

=10V, V

GE

=0V, f=100kHz, Tj=25

o

C

Rise Time t

r

1.6 2.1 2.8

Turn On Time

t

on

2.1 3.2 4.0

Fall Time t

f

1.1 2.1 3.3

Switching Times

Turn Off Time t

off

µs

2.8 4.6 5.8

V

CC

=1,650V, Ic=1,500A

L=100nH

R

G

=2.7Ω/2.7Ω, CGE=330nF (3)

V

GE

=±15V, Tj=125

o

C

- 2.50

- IF=1,500A, V

GE

=0V, Tj=25

o

C

2.30

2.70

3.10

IF=1,500A, V

GE

=0V, Tj=125

o

C

Peak Forward Voltage Drop V

FM

V

- 2.60

- IF=1,500A, V

GE

=0V, Tj=150

o

C

Reverse Recovery Time t

rr

µs - 0.9 1.4 Vcc=1,650V, IF=1,500A, L=100nH

Tj=125

o

C

E

on(10%)

- 2.9 3.6

- 3.2 - Tj=125

o

C

Turn On Loss E

on(full)

J/P

- 3.7 - Tj=150

o

C

E

off(10%)

- 2.3 2.9

- 2.9 - Tj=125

o

C

Turn Off Loss E

off(full)

J/P

- 3.0 - Tj=150

o

C

E

rr(10%)

- 1.5 2.0

- 2.0 - Tj=125

o

C

Reverse Recovery Loss E

rr(full)

J/P

- 2.5 - Tj=150

o

C

V

CC

=1,650V, Ic=1,500A,

L=100nH, R

G

=2.7

Ω

/2.7

Ω

,

CGE=330nF (3)

V

GE

=±15V

Notes:(3) R

G

and C

GE

value are the test condition’s value for evaluation of the switching

times, not recommended value.

Please, determine the suitable R

G

value after the measurement of switching

waveforms (overshoot voltage, etc.) with appliance mounted.

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

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IGBT MODULE Spec.No.IGBT-SP-10002 R2

P2

MBN1500E33E3

THERMAL CHARACTERISTICS

IGBT Rth(j-c)

- - 0.0078

Thermal Impedance

FWD Rth(j-c)

K/W

- - 0.0156

Junction to case

Contact Thermal Impedance

Rth(c-f)

K/W

- 0.005

- Case to fin (λgrease=1W/(m

･

K),

heat-sink flatness ≤50um)

DEFINITION OF TEST CIRCUIT

Fig.2 Definition of stray inductance

Fig.1 Switching test circuit

Fig.3 Definition of switching loss

t4

t3

Ic

ton

tr

Vge

10%

90%

Vce

t

0

t

0

t1

t2

Eon(10%)=

∫

Ic

･

Vce dt

t4

t3

Eon(Full)=

∫

Ic

･

Vce dt

t2

t1

t5

90%

Vge

Vce

Ic

10%

toff

tf

t8

t7

t0

t6

Eoff(10%)=

∫

Ic

･

Vce dt

t8

t7

Eoff(Full)=

∫

Ic

･

Vce dt

t6

t5

t12

t11

Err(10%)=

∫

IF

･

Vce dt

Err(Full)=

∫

IF

･

Vce dt

t10

t9

0.1IF

t9

t10

Vce

0.1Vce

0.5Irm

Irm

-Ic

trr

t12

t11

t

0

IF

Ic

t

0

VL

tL

Vce

t=t

L

Ls=

V

L

dIc

d

ｔ

(

)

Vcc

Ls

L

LOAD

Rg

Cge

G/D

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IGBT MODULE Spec.No.IGBT-SP-10002 R2

P3

MBN1500E33E3

STATIC CHARACTERISTICS

0

500

1,000

1,500

2,000

2,500

3,000

0 2 4 6

Collector-Emitter Voltage, VCE(V)

Collector Current, IC(A)

Tj=25℃

VGE=15V 13V

Collecter Current vs. Collector to Emitter Voltage

TENTATIVE

11V

9V

7V

0

500

1,000

1,500

2,000

2,500

3,000

0 2 4 6

Collector-Emitter Voltage, VCE(V)

Collector Current, IC(A)

Tj=125℃

VGE=15V 13V

Collecter Current vs. Collector to Emitter Voltage

TENTATIVE

11V

9V

7V

0

500

1000

1500

2000

2500

3000

0 2 4 6

Collector-Emitter Voltage, VCE(V)

Collector Current, IC(A)

Tj=150℃

VGE=15V 13V

Collecter Current vs. Collector to Emitter Voltage

TENTATIVE

11V

9V

7V

0

500

1000

1500

2000

2500

3000

0 1 2 3 4 5

Forward Voltage, VF(V)

Forward Current, IF(A)

VGE=0V

Forward Voltage of free-wheeling diode

TENTATIVE

Tj=125℃

Tj=150℃

Tj=25℃

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IGBT MODULE Spec.No.IGBT-SP-10002 R2

P4

MBN1500E33E3

DYNAMIC CHARACTERISTICS

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

0 500 1000 1500 2000 2500 3000

Collector Current, I

C

(A)

【

【【

【Conditions

ConditionsConditions

Conditions】

】】

】

Ls=100nH

Ls=100nHLs=100nH

Ls=100nH

Vcc=1650V

Vcc=1650VVcc=1650V

Vcc=1650V

VG=±15V

VG=±15VVG=±15V

VG=±15V

RG=2.7Ω

RG=2.7ΩRG=2.7Ω

RG=2.7Ω

CGE=330nF

CGE=330nFCGE=330nF

CGE=330nF

Tc=125℃

Tc=125℃Tc=125℃

Tc=125℃

Turn-on Loss vs. Collector Current

TYPICAL

Eon(full)

Eon(10%)

Eon(full)

（

150

℃)

Turn-on Loss, Eon(J/pulse)

I

C

V

GE

10%

V

CE

0

t1 t3 t4 t2

∫

⋅×=

2

1

4

3

10

T

TCEC

T

TCEC

dt)VI()full(Eon

dt)VI(%)(Eon

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

0 500 1000 1500 2000 2500 3000

Collector Current, I

C

(A)

【

【【

【Conditions

ConditionsConditions

Conditions】

】】

】

Ls=100nH

Ls=100nHLs=100nH

Ls=100nH

Vcc=1650V

Vcc=1650VVcc=1650V

Vcc=1650V

VG=±15V

VG=±15VVG=±15V

VG=±15V

RG=2.7Ω

RG=2.7ΩRG=2.7Ω

RG=2.7Ω

CGE=330nF

CGE=330nFCGE=330nF

CGE=330nF

Tc=125℃

Tc=125℃Tc=125℃

Tc=125℃

Turn-off Loss vs. Collector Current

TYPICAL

Eoff(full)

Eoff(10%)

Eoff(full)

(150

℃

)

Turn-off Loss, Eoff(J/pulse)

V

GE

V

CE

I

C

10%

t8

t7

t

0

t5

t6

∫

⋅×=

6

5

8

7

10

T

TCEC

T

TCEC

dt)VI()full(Eoff

dt)VI(%)(Eoff

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 500 1000 1500 2000 2500 3000

Forward Current, I

F

(A)

【

【【

【Conditions

ConditionsConditions

Conditions】

】】

】

Ls=100nH

Ls=100nHLs=100nH

Ls=100nH

Vcc=1650V

Vcc=1650VVcc=1650V

Vcc=1650V

VG=±15V

VG=±15VVG=±15V

VG=±15V

RG=2.7Ω

RG=2.7ΩRG=2.7Ω

RG=2.7Ω

CGE=330nF

CGE=330nFCGE=330nF

CGE=330nF

Tc=125℃

Tc=125℃Tc=125℃

Tc=125℃

Recovery Loss vs. Forward Current

TYPICAL

V

CE

0.1V

CE

0.1I

F

I

RM

- I

C

t10

t11

t

0

t12

t9

I

F

∫

⋅×=

10

9

12

11

10

T

TCEC

T

TCEC

dt)VI()full(Err

dt)VI(%)(Err

Err(full)

Err(10%)

Err(full)

(150

℃

)

Reverse Recovery Loss, Err(J/pulse)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0 500 1000 1500 2000 2500 3000

Collector Current, I

C

(A)

【

【【

【Conditions

ConditionsConditions

Conditions】

】】

】

Ls=100nH

Ls=100nHLs=100nH

Ls=100nH

Vcc=1650V

Vcc=1650VVcc=1650V

Vcc=1650V

VG=±15V

VG=±15VVG=±15V

VG=±15V

RG=2.7Ω

RG=2.7ΩRG=2.7Ω

RG=2.7Ω

CGE=330nF

CGE=330nFCGE=330nF

CGE=330nF

Tc=125℃

Tc=125℃Tc=125℃

Tc=125℃

Switching time vs. Collector current

TYPICAL

ton

tr

toff

tf

trr

Switching time, ton, tr, toff, tf, trr (µs)

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IGBT MODULE Spec.No.IGBT-SP-10002 R2

P5

MBN1500E33E3

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

0 1 2 3 4 5 6 7

Gate Resistance, R

G

(Ω)

Turn-on Loss, Eon(J/pulse)

【

【【

【Conditions

ConditionsConditions

Conditions】

】】

】

Ls=100nH

Ls=100nHLs=100nH

Ls=100nH

Vcc=1650V

Vcc=1650VVcc=1650V

Vcc=1650V

IC=1500A

IC=1500AIC=1500A

IC=1500A

VG=±15V

VG=±15VVG=±15V

VG=±15V

CGE=330nF

CGE=330nFCGE=330nF

CGE=330nF

Tc=125℃

Tc=125℃Tc=125℃

Tc=125℃

Turn-on Loss vs. Gate Resistance

TYPICAL

Eon(full)

Eon(10%)

I

C

V

GE

10%

V

CE

0

t1 t3 t4 t2

∫

⋅×=

2

1

4

3

10

T

TCEC

T

TCEC

dt)VI()full(Eon

dt)VI(%)(Eon

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 1 2 3 4 5 6 7

Gate Resistance, R

G

(Ω)

Turn-off Loss, Eoff(J/pulse)

【

【【

【Conditions

ConditionsConditions

Conditions】

】】

】

Ls=100nH

Ls=100nHLs=100nH

Ls=100nH

Vcc=1650V

Vcc=1650VVcc=1650V

Vcc=1650V

IC=1500A

IC=1500AIC=1500A

IC=1500A

VG=±15V

VG=±15VVG=±15V

VG=±15V

CGE=330nF

CGE=330nFCGE=330nF

CGE=330nF

Tc=125℃

Tc=125℃Tc=125℃

Tc=125℃

Turn-off Loss vs. Gate Resistance

TYPICAL

Eoff(full)

Eoff(10%)

V

GE

V

CE

I

C

10%

t8

t7

t

0

t5

t6

∫

⋅×=

6

5

8

7

10

T

TCEC

T

TCEC

dt)VI()full(Eoff

dt)VI(%)(Eoff

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 1 2 3 4 5 6 7

Gate Resistance, R

G

(Ω)

Reverse Recovery Loss, Err(J/pulse)

【

【【

【Conditions

ConditionsConditions

Conditions】

】】

】

Ls=100nH

Ls=100nHLs=100nH

Ls=100nH

Vcc=1650V

Vcc=1650VVcc=1650V

Vcc=1650V

IC=1500A

IC=1500AIC=1500A

IC=1500A

VG=±15V

VG=±15VVG=±15V

VG=±15V

CGE=330nF

CGE=330nFCGE=330nF

CGE=330nF

Tc=125℃

Tc=125℃Tc=125℃

Tc=125℃

Recovery Loss vs. Gate Resistance

TYPICAL

Err(full)

Err(10%)

V

CE

0.1V

CE

0.1I

F

I

RM

- I

C

t10

t11

t

0

t12

t9

I

F

∫

⋅×=

10

9

12

11

10

T

TCEC

T

TCEC

dt)VI()full(Err

dt)VI(%)(Err

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IGBT MODULE Spec.No.IGBT-SP-10002 R2

P6

MBN1500E33E3

OUTLINE DRAWINGS

C

G

E

C

E

C

E

C

E

Baseplate flatness test

(1) Convex measurement (2) 8 points gap measurement

Convex max

≦

+250

μ

m Gap

≦

+50µm

160mm

1

0

m

122mm

158.2mm

5

2

.

6

m

Convex measurement area Base gap measurement points

Circuit diagram

Label

Unit in mm

Weight: 1300(g)

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IGBT MODULE Spec.No.IGBT-SP-10002 R2

P7

MBN1500E33E3

TRANSIENT THERMAL IMPEDANCE

Transient Thermal Impedance Curve

Maximum

0.0001

0.001

0.01

0.1

0.001 0.01 0.1 1 10

IGBT

IGBTIGBT

IGBT

FWD

FWDFWD

FWD

Transient thermal impedance : Rth(j-c) (K/W)

Time : t(s)

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IGBT MODULE Spec.No.IGBT-SP-10002 R2

P8

MBN1500E33E3

QG-VG CURVE

Conditions:Ls=100nH, VCC=1650V, IC=1500A,

VGE=+/-15V, Tj=25

o

C

TYPICAL

QG-VGE curve

-15

-10

-5

0

5

10

15

-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12

QG (µ

µµ

µC)

VGE (V)

Negative environmental impact material

Please note the following materials are contained in the product,

in order to keep characteristic and reliability level.

Material Contained part

Lead (Pb) and its compounds Solder

Arsenic and its compounds Si chip

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IGBT MODULE Spec.No.IGBT-SP-10002 R2

P9

MBN1500E33E3

HITACHI POWER SEMICONDUCTORS



For inquiries relating to the products, please contact nearest overseas representatives which is located

“Inquiry” portion on the top page of a home page.

Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/

Notices

NoticesNotices

Notices

1. The information given herein, including the specifications and dimensions, is subject to

change without prior notice to improve product characteristics. Before ordering,

purchasers are advised to contact Hitachi sale

s department for the latest version of this

data sheets.

2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure

before use.

3. In cases where extremely high reliability is required(such as use in nuclear power control,

aerospace and aviation, traffic equipment, life-support-

related medical equipment, fuel

control equipment and various kinds of safety equipment), safety should be ensured by

using semiconductor devices that feature assured safety or by means of users’ fail-

safe

precautions or other arrangement. Or consult Hitachi’s sales department staff.

4. In no event shall Hitachi be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to this data shee

ts. Hitachi

assumes no responsibility for any intellectual property claims or any other problems that

may result from applications of information, products or circuits described in this data

sheets.

5. In no event shall Hitachi be liable for any failure in

a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

6. No license is granted by this data sheets under any patents or other rights of any third

party or Hitachi, Ltd.

7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,

without the expressed written permission of Hitachi, Ltd.

8. The products (technologies) described in this data sheets are not to be provided to any

party whose purpose in their application will hinder maintenance of international peace

and safety not are they to be applied to that purpose by their direct purchasers or any

third party. When exporting these products (technologies), the necessary procedures are

to be taken in accordance with related laws and regulations.

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