TYPES TIP503 THRU TIP506 N-P-N SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 120 V and 150 V Min ViBR)CEO e 2-A Rated Continuous Collector Current e 20 Watts at 100C Case Temperature @ Min ft of 70 MHz at5V,0.25A mechanical data TIP503 THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE TAPSOS ates amax SEATING PLANE 0.360 min BOTH ENDS 0,349 aot oO 9.034 aaa DIA 2 Lean, 2HOLES ALL DIMENSIONS ARE IN INCHES ALL JEDEC TO-66 DIMENSIONS AND NOTES ARE APPLICABLE TIP5OS ALL TERMINALS ARE INSULATED FROM THE CASE TIP506 SEATING PLANE Tepaunats feos wax ova 7 1e-32 UNE-2A 159 EE 880 see wore a toe On MAX BTUP TORQLE aoe 1SINLBS oe Zo | ! Po a y& I ong ff Vege i gue 2a 030 || I bia OA a 958 ao7g 078 0320 1 Dow OA sas mex ove TERMINAL 2 an0 ALL JEDEC TO-S9 DIMENSIONS AND NOTES ARE APPLICABLE NOTES: A. Within this dimension, case diameter may vary. B. Position of terminals with respect to hexagon is not controlied. Cc. The case temperature may be measured anywhere on the seating plane within 0,125 Inch of the stud. D. All dimensions are in inches unless otherwise specified. absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Base Voltage see Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage Continuous Collector Current Peak Collector Current (See Note 2) Continuous Base Current . Continuous Device Dissipation at (or below}, 100 C Case Temperature (See Note 3) Continuous Device Dissipation at (or below} 25C Free-Air Temperature (See Note 4) Operating Collector Junction Temperature Range Storage Temperature Range Lead or Terminal Temperature 1/16 Inch from Case for 10 Seconds NOTES: . These values apply when the base-emitter diode is open-circuited. 1 2. This value applies for ty, < 0.3 ms, duty cycle < 10%. 3. Derate linearly to 200C case temperature at the rate of 0.2 W/C. 4. Derate linearly to 200C free-air temperature at the rate of 11,4 mw/c, TIP503 TIP504 TIP505 TIPS506 130 V 160 V 120V 150 V 6V 6V wa 2Ae +5 A + 1A> + 20W> a 2W 65C to 200C 65C to 200C = 300c> TEXAS INSTRUMENTS 2-237 TYPES TIP503 THRU TIP506 N-P-N SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) TIP5O3 TIP504 PARAMETER TEST CONDITIONS TIPSOS TIP5O6 =|UNIT MIN MAX/MIN MAX VipRicEO Collector-Emitter Breakdown Voltage te =30mA, Ip =0, See Note 5 120 150 Vv VcE=60V, Ip=0 50 IcEO Coltector Cutoff Current Toe TFB. is =0 50 BA Voce 2 120V, Vee = 0 400 Vce = 150V, Vag = 0 400 Hh r A ices Collector Cutoff Current Vce-60V, Vpe~0, To= 150C 500 hi Vce=75V, Vpe-0, To= 150C 600 Vep=3V, Ico=0 20 20 ! Emitt t A Espo mitter Cutoff Current Veg OV, lo=0 200 200 ue h Static F ac t Transfer Rati Voes4V, IcatA, Sea Notes5and6| 40 200} 40 200 ar Tren ranster Fe ate Pornware Current trensrer mato Vce-4V, Ic-2A, SeaNotesSand6| 20 20 VBE Base-E mitter Voltage Vces4V, Ic#2A, See Notes 5 and 6 1.4 14} V v, Collector-Emitter tion Volt 1g = 0.74, lo= TA, See Notes 5 and 6 0.6 0.6 v reti CElsat} Wollector-Emitter Saturation Voltage 1prO2A, Ig=2A, See Notes6 and6 12 12 Small-Signalt Common-E mitter h Voce=5V, I= 250 mA, f= 1 kHz 40 40 te Forward Current Transfer Ratio ce c Smaill-Signal Common-E mitter NVce=5V, Io= 250 mA, f= 10MHz 7 7 heel Forward Current Transfer Ratio cE c NOTES: 5. These parameters must be measured using pulse techniques. ty = 300 us, duty cycle < 2%. 6. These param re measured with voltage-sensing contacts separate from the current-carrying contacts and located within 0.126 inch from the device body. thermal characteristics PARAMETER MAX__|UNIT ReJc Junction-to-Case Thermal Resistance 5 CCW Resa Junction-to-Free-Air Thermal Resistance 87.5 2-238 TEXAS INSTRUMENTS TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY THM IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLI