Rev. B
/
NX
2008
-
03
-
25
TIP47/48/49/50
NPN Hi
g
h Volta
g
e Power Transistors
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Page 1
of 4
Tel: (800)
-
TAITRON (800)
-
824
-
8766 (661)
-
257
-
6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
NPN High Voltage Power Transistors
Features
• Application for High Voltage and Switching Circuit
• RoHS Compliant
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Value Unit Conditions
VCBO
Collector-Base Voltage: TIP47
TIP48
TIP49
TIP50
350
400
450
500
V Open Emitter
VCEO
Collector-Emitter Voltage: TIP47
TIP48
TIP49
TIP50
250
300
350
400
V Open Base
VEBO Emitter-Base Voltage 5 V Open Collector
IC Collector Current (Continuous ) 1 A
ICP Collector Current (Peak) 2 A
IB Base Current 0.6 A
40 W TC= 25 ºC
PD Collector Power Dissipation 0.32 mW/° C Derate above 25 ºC
TJ,TSTG Operating Junction and Storage -55 to 150 ° C
Thermal Characteristics
Symbol Description Value Unit
Rth (j-a) Thermal Resistance from Junction to Ambient 62.5 ° C/W
Rth (j-c) Thermal Resistance from Junction to Case 3.125 ° C/W
TO-220
NPN Hi
g
h Volta
g
e Power Transistors
TIP47/48/49/50
Rev. A/WW
Rev. B
/
NX
2008
-
03
-
25
www.taitroncomponents.com Page 2
of 4
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
VCEO (SUS)
Collector- Emitter Sustaining Voltage
TIP47
TIP48
TIP49
TIP50
250
300
350
400
-- V IC = 30mA; IB =0
ICEO
Collector Cut-Off Current TIP47
TIP48
TIP49
TIP50
--
1
1
1
1
mA
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VCE = 250V, IB = 0
VCE = 300V, IB = 0
ICES
Collector Cut-Off Current TIP47
TIP48
TIP49
TIP50
--
1
1
1
1
mA
VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 450V, VBE = 0
VCE = 500V, VBE = 0
IEBO Emitter Cut-Off Current -- 1 mA VEB = 5V, IC = 0
hFE * DC Current Gain 30
10
150
VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
VCE(sat) * Collector-Emitter Saturation Voltage -- 1
V IC = 1A; IB = 0.2A
VBE(on) * Base-Emitter On Voltage -- 1.5 V VCE = 10V, IC = 1A
fT Current Gain Bandwidth Product 10 -- MHz VCE = 10V, IC = 0.2A, f=2MHz
tON Turn ON Time -- 0.5 µs
tSTG Storage Time -- 3 µs
tF Fall Time -- 0.3 µs
VCC = 400V,
5 IB1 = -2.5 IB2 = IC = 6A
RL= 66.7Ω
* Pulse Test: Pulse Width ≤300µs, duty Cycle ≤2%
NPN Hi
g
h Volta
g
e Power Transistors
TIP47/48/49/50
Rev. A/WW
Rev. B
/
NX
2008
-
03
-
25
www.taitroncomponents.com Page 3
of 4
Package Dimensions
TO-220
NPN Hi
g
h Volta
g
e Power Transistors
TIP47/48/49/50
Rev. A/WW
Rev. B
/
NX
2008
-
03
-
25
www.taitroncomponents.com Page 4
of 4
How to contact us:
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Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
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Tel: +52-55-5560-1519
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