SMS05C, SMS12C, SMS15C, SMS24C ESD Protection Diode Array, 5-Line This 5-line surge protection array is designed for application requiring transient voltage protection capability. It is intended for use in over-transient voltage and ESD sensitive equipment such as computers, printers, automotive electronics, networking communication and other applications. This device features a monolithic common anode design which protects five independent lines in a single TSOP-6 package. www.onsemi.com TSOP-6 FIVE SURGE PROTECTION 350 W PEAK POWER PIN ASSIGNMENT Features * Protects up to 5 Lines in a Single TSOP-6 Package * Peak Power Dissipation - 350 W (8 20 ms Waveform) * ESD Rating of Class 3B (Exceeding 8.0 kV) per Human Body Model * * * and Class C (Exceeding 400 V) per Machine Model Compliance with IEC 61000-4-2 (ESD) 15 kV (Air), 8.0 kV (Contact) Flammability Rating of UL 94 V-0 These are Pb-Free Devices 6 1 TSOP-6 CASE 318G Hand-Held Portable Applications Networking and Telecom Automotive Electronics Serial and Parallel Ports Notebooks, Desktops, Servers 5 3 4 CATHODE ANODE CATHODE CATHODE CATHODE CATHODE 6x MG G Symbol Rating Value Unit PPK 1 Peak Power Dissipation 8 20 ms Double Exponential Waveform (Note 1) 350 W Operating Junction Temperature Range -40 to 150 C Storage Temperature Range TSTG 2 MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25C unless otherwise specified) TJ 6 PIN 1. 2. 3. 4. 5. 6. SCALE 2:1 Applications * * * * * 1 -55 to 150 C TL Lead Solder Temperature (10 s) 260 C ESD Human Body Model ( HBM) Machine Model (MM) IEC 61000-4-2 Air (ESD) IEC 61000-4-2 Contact (ESD) >8000 >400 >15000 >8000 V x = SMS05C:J = SMS12C:K = SMS15C:L = SMS24C:M M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping TSOP-6 (Pb-Free) 3000/Tape & Reel SMS05CT1G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Non-repetitive current pulse per Figure 3. SMS12CT1G SMS15CT1G SMS24CT1G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2011 November, 2017 - Rev. 8 1 Publication Order Number: SMS05C/D SMS05C, SMS12C, SMS15C, SMS24C SMS05C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min Typ (Note 2) IT = 1.0 mA (Note 3) 6.2 Max Unit 5.0 V 7.2 V 5.0 mA Reverse Leakage Current IR VRWM = 5.0 V Clamping Voltage VC IPP = 5.0 A (8 20 ms Waveform) 9.8 V Clamping Voltage VC IPP = 24 A (8 20 ms Waveform) 14.5 V Maximum Peak Pulse Current IPP 8 Capacitance CJ VR = 0 V, f = 1.0 MHz (Line to GND) 24 A 260 400 pF Typ Max Unit 12 V 15 V 20 ms Waveform SMS12C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min (Note 2) IT = 1.0 mA (Note 3) 13.3 Reverse Leakage Current IR VRWM = 12 V 1.0 mA Clamping Voltage VC IPP = 5.0 A (8 20 ms Waveform) 0.001 19 V Clamping Voltage VC IPP = 15 A (8 20 ms Waveform) 23 V Maximum Peak Pulse Current IPP 8 15 A Capacitance CJ VR = 0 V, f = 1.0 MHz (Line to GND) 120 150 pF Typ Max Unit 15 V 19 V 1.0 mA 20 ms Waveform SMS15C ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise specified) (See Note 4) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min (Note 2) IT = 1.0 mA (Note 3) 17 Reverse Leakage Current IR VRWM = 15 V 0.05 Clamping Voltage VC IPP = 5.0 A (8 20 ms Waveform) 24 V Clamping Voltage VC IPP = 12 A (8 20 ms Waveform) 29 V Maximum Peak Pulse Current IPP 8 Capacitance CJ VR = 0 V, f = 1.0 MHz (Line to GND) 12 A 95 125 pF Typ Max Unit 24 V 32 V 1.0 mA 40 V 44 V 8.0 A 75 pF 20 ms Waveform SMS24C ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol VRWM VBR Conditions Min (Note 2) IT = 1.0 mA (Note 3) Reverse Leakage Current IR VRWM = 24 V Clamping Voltage VC IPP = 5.0 A (8 Clamping Voltage VC IPP = 8 A (8 Maximum Peak Pulse Current IPP 8 Capacitance CJ VR = 0 V, f = 1.0 MHz (Line to GND) 26.7 0.001 20 ms Waveform) 20 ms Waveform) 20 ms Waveform 60 2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Parametrics are the same for the Pb-Free packages, which are suffixed with a "G''. www.onsemi.com 2 SMS05C, SMS12C, SMS15C, SMS24C 100 100 90 90 % OF PEAK PULSE CURRENT PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 C TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise specified) 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 200 tr 0 20 Figure 1. Pulse Derating Curve SMS24C 45 40 35 8 x 20 ms PULSE WAVEFORM SMS15C 30 SMS12C 25 20 SMS05C 15 10 5 0 0 5 10 15 80 60 Figure 2. 8 x 20 ms Pulse Waveform 20 300 JUNCTION CAPACITANCE (pF) VC, CLAMPING VOLTAGE (V) 50 40 t, TIME (ms) TA, AMBIENT TEMPERATURE (C) 250 200 SMS05C 150 100 SMS12C 50 0 25 f = 1.0 MHz SMS15C 0 5 10 15 SMS24C 20 25 VBR, REVERSE VOLTAGE (V) IPP, PEAK PULSE CURRENT (A) Figure 3. Clamping Voltage vs. Peak Pulse Current Figure 4. Junction Capacitance vs. Reverse Voltage Figure 5. ESD Pulse IEC 61000-4-2 (8.0 kV Contact) Figure 6. SMS15CT1 ESD Response for IEC 61000-4-2 (+8.0 kV Contact) www.onsemi.com 3 SMS05C, SMS12C, SMS15C, SMS24C TYPICAL COMMON ANODE APPLICATIONS A 5 surge protection junction common anode design in a TSOP-6 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. A simplified example of SMS05C Series Device applications is illustrated below. A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER E GND SMS05C SERIES DEVICE Figure 7. Computer Interface Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O CLOCK CONTROL BUS GND SMS05C SERIES DEVICE Figure 8. Microprocessor Protection www.onsemi.com 4 SMS05C, SMS12C, SMS15C, SMS24C PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE V NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. D EE EE 6 E1 1 NOTE 5 5 2 H L2 4 GAUGE PLANE E 3 L b C DETAIL Z e 0.05 M A SEATING PLANE DIM A A1 b c D E E1 e L L2 M c A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 05 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 105 - RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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