SMS15CT1G/BKN - ON Semiconductor

November, 2017 − Rev. 8

1Publication Order Number:

SMS05C/D

SMS05C, SMS12C, SMS15C,

SMS24C

ESD Protection Diode Array,

5-Line

This 5−line surge protection array is designed for application

requiring transient voltage protection capability. It is intended for use

in over−transient voltage and ESD sensitive equipment such as

computers, printers, automotive electronics, networking

communication and other applications. This device features a

monolithic common anode design which protects five independent

lines in a single TSOP−6 package.

Features

•Protects up to 5 Lines in a Single TSOP−6 Package

•Peak Power Dissipation − 350 W (8 20 ms Waveform)

•ESD Rating of Class 3B (Exceeding 8.0 kV) per Human Body Model

and Class C (Exceeding 400 V) per Machine Model

•Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8.0 kV

(Contact)

•Flammability Rating of UL 94 V−0

•These are Pb−Free Devices

Applications

•Hand−Held Portable Applications

•Networking and Telecom

•Automotive Electronics

•Serial and Parallel Ports

•Notebooks, Desktops, Servers

MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

Symbol Rating Value Unit

PPK 1 Peak Power Dissipation

8 20 ms Double Exponential Waveform

(Note 1)

350 W

TJOperating Junction Temperature Range −40 to 150 °C

TSTG Storage Temperature Range −55 to 150 °C

TLLead Solder Temperature (10 s) 260 °C

ESD Human Body Model ( HBM)

Machine Model (MM)

IEC 61000−4−2 Air (ESD)

IEC 61000−4−2 Contact (ESD)

>8000

>400

>15000

>8000

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Non−repetitive current pulse per Figure 3.

TSOP−6 FIVE SURGE

PROTECTION

350 W PEAK POWER

TSOP−6

CASE 318G

MARKING DIAGRAM

PIN ASSIGNMENT

Device Package Shipping†

ORDERING INFORMATION

SMS05CT1G

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. CATHODE

5. CATHODE

6. CATHODE

www.onsemi.com

6x MG

x = SMS05C:J

= SMS12C:K

= SMS15C:L

= SMS24C:M

M= Date Code

G= Pb−Free Package

SMS12CT1G

SMS15CT1G

TSOP−6

(Pb−Free) 3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SMS24CT1G

www.onsemi.com

(Note: Microdot may be in either location)

SCALE 2:1

SMS05C, SMS12C, SMS15C, SMS24C

www.onsemi.com

SMS05C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Reverse Working Voltage VRWM (Note 2) 5.0 V

Breakdown Voltage VBR IT = 1.0 mA (Note 3) 6.2 7.2 V

Reverse Leakage Current IRVRWM = 5.0 V 5.0 mA

Clamping Voltage VCIPP = 5.0 A (8 20 ms Waveform) 9.8 V

Clamping Voltage VCIPP = 24 A (8 20 ms Waveform) 14.5 V

Maximum Peak Pulse Current IPP 8 20 ms Waveform 24 A

Capacitance CJVR = 0 V, f = 1.0 MHz (Line to GND) 260 400 pF

SMS12C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Reverse Working Voltage VRWM (Note 2) 12 V

Breakdown Voltage VBR IT = 1.0 mA (Note 3) 13.3 15 V

Reverse Leakage Current IRVRWM = 12 V 0.001 1.0 mA

Clamping Voltage VCIPP = 5.0 A (8 20 ms Waveform) 19 V

Clamping Voltage VCIPP = 15 A (8 20 ms Waveform) 23 V

Maximum Peak Pulse Current IPP 8 20 ms Waveform 15 A

Capacitance CJVR = 0 V, f = 1.0 MHz (Line to GND) 120 150 pF

SMS15C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) (See Note 4)

Parameter Symbol Conditions Min Typ Max Unit

Reverse Working Voltage VRWM (Note 2) 15 V

Breakdown Voltage VBR IT = 1.0 mA (Note 3) 17 19 V

Reverse Leakage Current IRVRWM = 15 V 0.05 1.0 mA

Clamping Voltage VCIPP = 5.0 A (8 20 ms Waveform) 24 V

Clamping Voltage VCIPP = 12 A (8 20 ms Waveform) 29 V

Maximum Peak Pulse Current IPP 8 20 ms Waveform 12 A

Capacitance CJVR = 0 V, f = 1.0 MHz (Line to GND) 95 125 pF

SMS24C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit

Reverse Working Voltage VRWM (Note 2) 24 V

Breakdown Voltage VBR IT = 1.0 mA (Note 3) 26.7 32 V

Reverse Leakage Current IRVRWM = 24 V 0.001 1.0 mA

Clamping Voltage VCIPP = 5.0 A (8 20 ms Waveform) 40 V

Clamping Voltage VCIPP = 8 A (8 20 ms Waveform) 44 V

Maximum Peak Pulse Current IPP 8 20 ms Waveform 8.0 A

Capacitance CJVR = 0 V, f = 1.0 MHz (Line to GND) 60 75 pF

2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater

than the DC or continuous peak operating voltage level.

3. VBR is measured at pulse test current IT

4. Parametrics are the same for the Pb−Free packages, which are suffixed with a “G’’.

SMS05C, SMS12C, SMS15C, SMS24C

www.onsemi.com

TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified)

Figure 1. Pulse Derating Curve

100

00 25 50 75 100 125 150 175 200

TA, AMBIENT TEMPERATURE (°C)

PEAK PULSE DERATING IN % OF PEAK POWER

OR CURRENT @ TA= 25 C

Figure 2. 8 × 20 ms Pulse Waveform

100

00204060

t, TIME (ms)

% OF PEAK PULSE CURRENT

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

PEAK VALUE IRSM @ 8 ms

HALF VALUE IRSM/2 @ 20 ms

Figure 3. Clamping Voltage vs. Peak Pulse Current

00510

IPP

, PEAK PULSE CURRENT (A)

VC, CLAMPING VOLTAGE (V)

15 20 25

Figure 4. Junction Capacitance vs. Reverse Voltage

300

250

200

150

100

005

VBR, REVERSE VOLTAGE (V)

JUNCTION CAPACITANCE (pF)

10 15 20 25

8 x 20 ms

PULSE WAVEFORM

f = 1.0 MHz

SMS05C

SMS12C

SMS15C

SMS24C

SMS05C

SMS12C

SMS15C SMS24C

Figure 5. ESD Pulse IEC 61000−4−2

(8.0 kV Contact)

Figure 6. SMS15CT1 ESD Response for IEC

61000−4−2 (+8.0 kV Contact)

SMS05C, SMS12C, SMS15C, SMS24C

www.onsemi.com

TYPICAL COMMON ANODE APPLICATIONS

A 5 surge protection junction common anode design in a

TSOP−6 package protects four separate lines using only one

package. This adds flexibility and creativity to PCB design

especially when board space is at a premium. A simplified

example of SMS05C Series Device applications is

illustrated below.

KEYBOARD

TERMINAL

PRINTER

ETC.

FUNCTIONAL

DECODER

I/O

SMS05C SERIES DEVICE

GND

Figure 7. Computer Interface Protection

Figure 8. Microprocessor Protection

RAM ROM

CLOCK

CPU

CONTROL BUS

ADDRESS BUS

DATA BUS

GND

VGG

VDD

SMS05C SERIES DEVICE

I/O

SMS05C, SMS12C, SMS15C, SMS24C

www.onsemi.com

PACKAGE DIMENSIONS

ÉÉ

TSOP−6

CASE 318G−02

ISSUE V

456

0.05

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM

LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR

GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D

AND E1 ARE DETERMINED AT DATUM H.

5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX

MILLIMETERS

0.90 1.00 1.10

A1 0.01 0.06 0.10

b0.25 0.38 0.50

c0.10 0.18 0.26

D2.90 3.00 3.10

E2.50 2.75 3.00

e0.85 0.95 1.05

L0.20 0.40 0.60

0.25 BSC

−

05105

1.30 1.50 1.70

RECOMMENDED

NOTE 5

SEATING

PLANE

GAUGE

PLANE

DETAIL Z

0.60

3.20 0.95

0.95

PITCH

DIMENSIONS: MILLIMETERS

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SMS05C/D

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