MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SOT-23 (TO-236) CASE 318 STYLE 6 Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant* BASE 1 MAXIMUM RATINGS Symbol Value Unit Collector -Emitter Voltage Rating VCES 30 Vdc Collector -Base Voltage VCBO 30 Vdc Emitter -Base Voltage VEBO 10 Vdc IC 300 mAdc Collector Current - Continuous EMITTER 2 MARKING DIAGRAM 1x M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1 Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C PD RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 4 1 1x M G = Device Code x = M for MMBTA13LT1G, SMMBTA13LT1G x = N for MMBTA14LT1G, SMMBTA14LT1G = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping MMBTA13LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBTA13LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBTA14LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBTA14LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBTA13LT1/D MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max 30 - - 100 - 100 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO Vdc nAdc nAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) MMBTA13, SMMBTA13 MMBTA14, SMMBTA14 (IC = 100 mAdc, VCE = 5.0 Vdc) MMBTA13, SMMBTA13 MMBTA14, SMMBTA14 hFE Collector -Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) Base -Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) VBE - 5000 10,000 - - 10,000 20,000 - - - 1.5 - 2.0 125 - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (Note 4) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT = |hfe| ftest. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MHz MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 500 2.0 BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 100 10 mA 50 100 mA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 mA 0.1 0.07 0.05 10 mA 0.03 5.0 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 50k 100k Figure 3. Noise Current 14 200 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) IC = 10 mA 70 50 100 mA 30 20 1.0 mA 10 1.0 2.0 10 10 mA 8.0 100 mA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) 500 0 1.0 1000 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kW) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G SMALL-SIGNAL CHARACTERISTICS 20 |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 TJ = 25C C, CAPACITANCE (pF) 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 VCE = 5.0 V f = 100 MHz TJ = 25C 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 1.0 200k hFE, DC CURRENT GAIN TJ = 125C 100k 70k 50k 25C 30k 20k 10k 7.0k 5.0k -55C VCE = 5.0 V 3.0k 2.0k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C 1.4 V, VOLTAGE (VOLTS) 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IB, BASE CURRENT (mA) 100 200 500 1000 Figure 9. Collector Saturation Region 1.6 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 VCE(sat) @ IC/IB = 1000 0.6 10 500 3.0 Figure 8. DC Current Gain 5.0 7.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 2.0 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RqVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 qVB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE 0.03 ZqJC(t) = r(t) RqJCTJ(pk) - TC = P(pk) ZqJC(t) ZqJA(t) = r(t) RqJATJ(pk) - TA = P(pk) ZqJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 10 5.0 20 50 t, TIME (ms) 100 200 500 Figure 12. Thermal Response 1.0k 700 500 IC, COLLECTOR CURRENT (mA) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G 300 200 1.0 ms TC = 25C TA = 25C 100 ms 1.0 s 100 70 50 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 13. Active Region Safe Operating Area FIGURE A tP PP PP t1 1/f t DUTYCYCLE + t1f + 1 tP PEAK PULSE POWER = PP Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 1.0k 2.0k 5.0k 10k MMBTA13LT1G, SMMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBTA13LT1/D