Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID= 10µA6070—V
Gate Threshold Voltage VGS(th) VDS = VGS, ID= 250µA 1.0 2.0 2.5 V
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ——
±100 nA
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V —— 1µA
VDS = 60V, VGS = 0V, TC= 125°C
——500
On-State Drain Current(1) ID(on) VDS ≥7.5V, VGS = 10V 800 1500 —mA
Drain-Source On-State Resistance(1) RDS(on) VGS = 10V, ID = 500mA —1.7 3.0 Ω
VGS = 5V, ID= 50mA —2.5 4.0
Forward Transconductance(1) gfs VDS = 10V, ID= 200mA —250 —mS
Dynamic
Turn-On Time ton —720
Turn-Off Time toff —12 20 ns
Input Capacitance Ciss VGS = 0V —33 50
Output Capacitance Coss VDS = 25V —4.3 25 pF
Reverse Transfer Capacitance Crss f = 1.0MHZ—1.6 5
Source-Drain Diode
Diode Forward Voltage(1) VSD IS= 230mA, VGS = 0V —0.85 1.5 V
Notes:
(1) Pulse test; pulse width ≤300 µs, duty cycle ≤2%
VDD = 30V, RL= 150Ω
ID= 200mA, VGEN = 10V
RG= 25Ω
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TJ = 125°C
Fig. 2 – Source-Drain Diode
Forward Voltage
25°C
--55°C
VGS = 0V
IS -- Source Current (A)
VSD -- Source-to-Drain Voltage (V)
Fig. 1 – On-Resistance
vs. Gate-to-Source Voltage
ID = 230mA
0
0.5
1.0
2.0
1.5
2.5
3.0
3.5
2
RDS(ON) -- On-Resistance (Ω)
VGS -- Gate-to-Source Voltage (V)
46810
TJ = 125°C
25°C
Revision: 2 2003/04/30