January 2012 Doc ID 7076 Rev 8 1/19
19
SD2931-10
RF power transistor
HF/VHF/UHF N-channel power MOSFETs
Features
■Gold metallization
■Excellent thermal stability
■Common source configuration
■POUT = 150 W min. with 14 dB gain @ 175 MHz
■Thermally enhanced packaging for lower
junction temperatures
Description
The SD2931-10 is a gold metallized N-channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V dc large
signal applications up to 230 MHz.
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),
representing the best-in-class transistors for ISM
applications, where reliability and ruggedness are
critical factors.
Figure 1. Pin connection
M174
Epoxy sealed
1
3
4
2
1. Drain
2. Source
3. Gate
4. Source
Table 1. Device summary
Order code Marking Base qty. Package Packaging(1)
SD2931-10W SD2931-10 25 pcs M174 Plastic tray
1. For more details please refer to Chapter 11: Marking, packing and shipping specifications.
www.st.com
Contents SD2931-10
2/19 Doc ID 7076 Rev 8
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Transient thermal impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Typical performance @ 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
8 Typical performance @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
9 Test circuit @ 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
11 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 17
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SD2931-10 Electrical data
Doc ID 7076 Rev 8 3/19
1 Electrical data
1.1 Maximum ratings
(TCASE = 25 °C).
1.2 Thermal data
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V(BR)DSS(1)
1. TJ = 150°C
Drain source voltage 125 V
VDGR Drain-gate voltage (RGS = 1 MΩ)125V
VGS Gate-source voltage ±20 V
IDDrain current 20 A
PDISS Power dissipation 389 W
TJMax. operating junction temperature 200 °C
TSTG Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Junction - case thermal resistance 0.45 °C/W
Electrical characteristics SD2931-10
4/19 Doc ID 7076 Rev 8
2 Electrical characteristics
(TCASE = 25 °C).
2.1 Static
2.2 Dynamic
Table 4. Static (per side)
Symbol Test conditions Min Typ Max Unit
V(BR)DSS VGS = 0 V IDS = 100 mA 125 V
IDSS VGS = 0 V VDS = 50 V 50 μA
IGSS VGS = 20 V VDS = 0 V 250 nA
VGS(Q) (1)
1. VGS(Q) sorted with alpha/numeric code marked on unit.
VDS = 10 V ID = 250 mA See table below V
VDS(ON) VGS = 10 V ID = 10 A 3.0 V
GFS VDS = 10 V ID = 5 A 5 6 mho
CISS VGS = 0 V VDS = 50 V f = 1 MHz 480 pF
COSS VGS = 0 V VDS = 50 V f = 1 MHz 190 pF
CRSS VGS = 0 V VDS = 50 V f = 1 MHz 18 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
POUT VDD = 50 V IDQ = 250 mA f = 175 MHz 150 W
GPS VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 14 15 dB
nDVDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 55 65 %
Load
mismatch
VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz
All phase angles 10:1 VSWR
SD2931-10 Electrical characteristics
Doc ID 7076 Rev 8 5/19
Table 6. VGS sorts
Symbol Value Symbol Value
A 2.0 - 2.1 K 2.9 - 3.0
B 2.1 - 2.2 L 3.0 - 3.1
C 2.2 - 2.3 M 3.1 - 3.2
D 2.3 - 2.4 N 3.2 - 3.3
E 2.4 - 2.5 P 3.3 - 3.4
F 2.5 - 2.6 Q 3.4 - 3.5
G 2.6 - 2.7 R 3.5 - 3.6
H 2.7 - 2.8 S 3.6 - 3.7
J 2.8 - 2.9
Transient thermal impedance SD2931-10
6/19 Doc ID 7076 Rev 8
3 Transient thermal impedance
Figure 2. Transient thermal impedance
% % % % % %
4HERMALIMPEDANCE :4(* ##7
2ECTANGULARPOWERPULSEWIDTHSEC
SINGLEPULSE
3INGLEREPETITIVEPULSE
!-6
SD2931-10 Transient thermal impedance
Doc ID 7076 Rev 8 7/19
Figure 3. Transient thermal impedance model
2
2/HM
#
#
# &
#
#
# &
#
#
# &
#
#
# &
2
2
2/HM
2
2
2/HM
2
2
2/HM
$ISSIPATED0OWER?7ATTS
!-6
Impedance data SD2931-10
8/19 Doc ID 7076 Rev 8
4 Impedance data
Figure 4. Impedance data
Table 7. Impedance data
Freq ZIN (Ω)Z
DL (Ω)
30 MHz 1.7 - j 5.7 6.8 + j 0.9
175 MHz 1.2 - j 2.0 2.0 + j 2.4
Typical Drain
Load Impedance
Typical Input
Impedance
G
Zin
ZDL
D
S
SD2931-10 Typical performance
Doc ID 7076 Rev 8 9/19
5 Typical performance
Figure 5. Capacitance vs drain-source
voltage
Figure 6. Drain current vs gate voltage
Figure 7. Gate-source voltage vs case
temperature
Figure 8. Maximum thermal resistance vs
case temperature
Figure 9. Safe operating area
0 1020304050
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
10000
C, CAPACITANCE (pF)
Ciss
Coss
Crss
f =1MHz
22.533.544.555.56
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID, DRAIN CURRENT (A)
Tc= -20 °C
Tc=+25 °C
Tc=+80 °C
VDS = 10 V
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (°C)
0.8
0.84
0.88
0.92
0.96
1
1.04
1.08
1.12
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Id =.25A
Id =.1A
Id =1A
Id =2A
Id =4A
Id =11A
Id =5A
Id =7A
Id =9A
Id =10A
Vds= 10 V
25 35 45 55 65 75 85
Tc, CASE TEMPERATURE (°C)
0.44
0.48
0.52
0.56
0.6
RTH(j-c) (°C/W)
1 10 100 1000
Vds(V)
1
10
100
Ids(A)
(1) Current in this area may be limited by Rds(on)
(1)
Typical performance @ 175 MHz SD2931-10
10/19 Doc ID 7076 Rev 8
6 Typical performance @ 175 MHz
Figure 10. Output power vs input power Figure 11. Output power vs input power
Figure 12. Power gain vs output power Figure 13. Efficiency vs output power
0 5 10 15 20 25
Pin, INPUT POWER (W)
0
30
60
90
120
150
180
210
240
270
Pout, OUTPUT POWER (W)
f= 175MHz
Idq= 250mA
Vdd= 40V
Vdd= 50V
0 5 10 15 20 25
Pin, INPUT POWER(W)
0
30
60
90
120
150
180
210
240
270
Pout, OUTPUT POWER (W)
Vdd= 50V
Idq= 250mA
f= 175MHz
Tc =-20 °C
Tc =+25 °C
Tc =+80 °C
0 50 100 150 200 250
Pout, OUTPUT POWER (W)
6
8
10
12
14
16
18
Gp, POWER GAIN (dB)
Vdd=50V
Idq=250mA
f=175Mhz
0 50 100 150 200 250
Pout, OUTPUT POWER (W)
20
30
40
50
60
70
80
Nd, EFFICIENCY (%)
Vdd=50V
Idq=250mA
f=175Mhz
Figure 14. Output power vs supply voltage Figure 15. Drain current vs gate-source
voltage
24 28 32 36 40 44 48 52
Vdd,DRAIN VOLTAGE(V)
0
30
60
90
120
150
180
210
240
270
Pout,OUTPUT POWER(W)
Pin =2.5W
Pin =5W
Pin =10W
Idq= 250mA
f= 175MHz
22.533.544.555.56
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID, DRAIN CURRENT (A)
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
SD2931-10 Test circuit
Doc ID 7076 Rev 8 11/19
7 Test circuit
Figure 16. 175 MHz schematic (production test circuit)
Note: All dimensions in inches
REF. 1021579C
Table 8. Component part list
Component Description
T1 4:1 transformer, 25 ohm flexible coax .090 OD 6” long
T2 1:4 transformer, 25 ohm semi-rigid coax .141 OD 6” long
FB1 Toroid X 2, 0.5” OD .312” ID 850μ 2 turns
FB2, FB3 VK200
FB4 Shield bead, 1” OD 0.5” ID 850μ 3 turns
L1 1/4 wave choke, 50 ohm semi-rigid coax .141 OD 12” Long
PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55
R1, R3 470 ohm 1 W chip resistor
R2 360 ohm 1/2 W resistor
R4 20 Kohm 10 turn potentiometer
R5 560 ohm 1 W resistor
C1, C11 470 pF ATC chip cap
C2 43 pF ATC chip cap
C3, C8, C9 Arco 404, 12-65 pF
C4 Arco 423, 16-100 pF
Test circuit SD2931-10
12/19 Doc ID 7076 Rev 8
Figure 17. 175 MHz test circuit photomaster
Figure 18. 175 MHz test circuit
Component Description
C5 120 pF ATC chip cap
C6 0.01 μF ATC chip cap
C7 30 pF ATC chip cap
C10 91 pF ATC chip cap
C12, C15 1200 pF ATC chip cap
C13, C14,C16, C17 0.01 μF / 500 V chip cap
C18 10 μF 63 V electrolytic capacitor
Table 8. Component part list (continued)
6.4 inches
4 inches
SD2931-10 Typical performance @ 30 MHz
Doc ID 7076 Rev 8 13/19
8 Typical performance @ 30 MHz
Figure 19. Output power vs input power Figure 20. Power gain vs output power
Figure 21. Efficiency vs output power Figure 22. Output power vs supply voltage
0 0.1 0.2 0.3 0.4 0.5
Pin, INPUT POWER (W)
0
50
100
150
200
250
Pout, OUTPUT POWER (W)
Vdd = 50 V
Vdd = 40 V
f = 30 MHz
IDQ = 250 mA
0 40 80 120 160 200
Pout, OUTPUT POWER (W)
24
25
26
27
28
29
30
PG, POWER GAIN (dB)
f = 30 MHz
VDD = 50 V
IDQ = 250 mA
0 40 80 120 160 200
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
70
Efficiency (%)
f = 30 MHz
VDD = 50 V
IDQ = 250 mA
24 28 32 36 40 44 48 52
VDD(V)
0
50
100
150
200
Pout(W)
f = 30 MHz
IDQ = 250 mA
Pin=.31 W
Pin=.22 W
Pin=.13 W
Figure 23. Output power vs gate voltage
0123456
VGS GATE-SOURCE VOLTAGE (V)
0
50
100
150
200
Pout, OUTPUT POWER (W)
VDD = 50 V
IDQ = 250 mA
f = 30 MHz
Pin = Constant
T= -20 °C
T= +25 °C
T= +80 °C
Test circuit @ 30 MHz SD2931-10
14/19 Doc ID 7076 Rev 8
9 Test circuit @ 30 MHz
Figure 24. 30 MHz test circuit schematic (engineering test circuit)
Figure 25. 30 MHz test circuit part list
Symbol Description
T1 9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15” long
T2 1:4 transformer, 50 Ω flexible coax .225 OD 15” long
FB1 Toroid 1.7” OD .30” ID 220 μ 4 turns
FB2 Surface mount EMI shield bead
FB3 Toroid 1.7” OD .300” ID 220μ 3 turns
RFC1 Toroid 0.5” OD 0.30” ID 125μ 4 turns 12 awg wire
PCB 0.62” woven fiberglass, 1 oz. Copper, 2 Sides, εr = 2.55
R1, R3 1 KΩ 1 W chip resistor
R2 680 Ω 3 W wirewound resistor
C1,C4,C6,C7,C8,
C9, C11,C12,C13 0.1 μF ATC chip cap
C2, C3 750 pF ATC chip cap
C5 470 pF ATC chip cap
C10 10 μF 63 V electrolytic capacitor
C14 100 μF 63 V electrolytic capacitor
SD2931-10 Package mechanical data
Doc ID 7076 Rev 8 15/19
10 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Package mechanical data SD2931-10
16/19 Doc ID 7076 Rev 8
Figure 26. M174 (0.500 DIA 4/L N/HERM W/FLG) package dimensions
Table 9. M174 (0.500 DIA 4/L N/HERM W/FLG) mechanical data
Dim.
mm. Inch
Min Typ Max Min Typ Max
A 5.56 5.584 0.219 0.230
B 3.18 0.125
C 6.22 6.48 0.245 0.255
D 18.28 18.54 0.720 0.730
E 3.18 0.125
F 24.64 24.89 0.970 0.980
G 12.57 12.83 0.495 0.505
H 0.08 0.18 0.003 0.007
I 2.11 3.00 0.083 0.118
J 3.81 4.45 0.150 0.175
K 7.11 0.280
L 25.53 26.67 1.005 1.050
M 3.05 3.30 0.120 0.130
Controlling Dimension: Inches 1011000D
SD2931-10 Marking, packing and shipping specifications
Doc ID 7076 Rev 8 17/19
11 Marking, packing and shipping specifications
Figure 27. Marking drawing
Table 10. Packing and shipping specifications
Order code Packaging Pcs per
tray
Dry pack
humidity VGS Lot code
SD2931-10W Plastic tray 25 < 10 % Not mixed Mixed
Table 11. Marking specifications
Symbol Description
W Wafer process code
XV
GS sort
CZ Assembly plant
xxx Last 3 digit of diffusion lot
VY Diffusion plant
MAR County of origin
CZ Test and finishing plant
y Assembly year
yy Assembly week
Revision history SD2931-10
18/19 Doc ID 7076 Rev 8
12 Revision history
Table 12. Document revision history
Date Revision Changes
09-Sep-2004 4
17-Jun-2004 5 Updated Table 5: Dynamic on page 4
04-Mar-2008 6 Updated Table 4: Static (per side), Tabl e 5 : Dy nam ic and Ta ble 6:
VGS sorts on page 5
08-Feb-2011 7 Inserted Chapter 11: Marking, packing and shipping specifications.
12-Jan-2012 8 Inserted Chapter 3: Transient thermal impedance.
SD2931-10
Doc ID 7076 Rev 8 19/19
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