1SS181 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW (Tamb=25 C) Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1. o 0.95 0.4 0.95 2.4 1.3 2.9 1.9 o 1 Unit:mm Marking:A3 ELECTRICAL CHARACTERISTICS o (Ta=25 C unless otherwise specified) Parameter Symbol Test Condition MIN. MAX. 80 Unit Reverse breakdown voltage V (BR) I R =100 A Reverse Voltage leakage current IR V R =80V 0.5 Forward Voltage VF I F =100mA 1.2 V Diode Capacitance C tot V R =0V 4 pF Reverse Recovery Time t rr I F =I R =10mA I rr =0.1I R 4 nS f=1MHz V A 1SS181 Typical Characteristics IF - VF REVERSE CURRENT I R (A) FORWARD CYRRENT I F (A) 100m T A =100 C 10m 25 C -25 C 1m 100 10 0 0.2 0.4 IR - VR 10 1 0.6 0.8 1.0 100 C 1 75 C 100n T A =25 C 10n 1n 0 1.2 FORWARD VOLTAGE V F (V) 1.5 1.0 0.5 0 0.3 1 3 10 30 REVERSE VOLTAGE V R (V) 100 REVERSE RECOVERY TIME trr(ns) TOTAL CAPACITANCE C T (pF) f=1MHz Ta=25 C 2.0 20 40 60 80 REVERSE NOLTAGE V R (V) CT - VR 2.5 50 C trr - I F 1000 Ta=25 C Fig.1 50 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 FORWARD CURRENT I F (mA) 100