P : 150 mW (Tamb=25 C)
I : 100 mA
V : 80V
T , T : -55 C to +150 C
Features
Power dissipation
Forward Current
Reverse Voltage
Operating and storage junction temperature range
D
F
R
j stg
o
o o
1SS181 SWITCHING DIODE
SOT-23 Plastic-Encapsulate DIODE
3
1
2
SOT-23
Marking:A3
Parameter Symbol Test Condition UnitMAX.MIN.
Diode Capacitance
Reverse Recovery Time
tot
C
trr
I
V
R
F
I =100mAF
pF
nS
V
Forward Voltage
(Ta=25 C unless otherwise specified)
o
Reverse Voltage leakage current
Reverse breakdown voltage V(BR) I =100 AR80
0.5
1.2 V
A
V =80VR
4
4
V =0V f=1MHzR
1.
1.3
2.4
2.9
1.9
0.950.95
0.4
Unit:mm
I =I =10mA
I =0.1I
F R
rr R
ELECTRICAL CHARACTERISTICS
1
100m
10m
1m
100
10 0 0.2 0.4 0.6 1.0 1.2 0.8
FORWARD CYRRENT I (A)F
FORWARD VOLTAGE V (V)F
0 20 40 60 80
REVERSE CURRENT I (A)R
REVERSE NOLTAGE V (V)R
10
1
100n
10n
1n
0.3 1 3 10 30 100
REVERSE VOLTAGE V (V)R
2.5
2.0
1.5
1.0
0.5
0
TOTAL CAPACITANCE C (pF)T
FORWARD CURRENT I (mA)F
REVERSE RECOVERY TIME trr(ns)
1000
50
30
10
5
3
1
0.5
0.1 0.3 1 3 10 30 100
T =100 CA
。。
25 C
。。
-25 C
。。
I - VF F I - VR R
T =25 CA
。。
50 C
。。
75 C
。。
100 C
。。
f=1MHz
Ta=25 C
。。
C - VT R
Ta=25 C
Fig.1
。。
trr - IF
1SS181
Typical Characteristics
