BUX85F - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of February 1996

File under Discrete Semiconductors, SC06

1997 Aug 14

DISCRETE SEMICONDUCTORS

BUX84F; BUX85F

Silicon diffused power transistors

1997 Aug 14 2

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT186 package with

electrically isolated mounting base.

APPLICATIONS

•Converters

•Inverters

•Switching regulators

•Motor control systems.

PINNING

PIN DESCRIPTION

1 base

2 collector

3 emitter

mb mounting base;

electrically isolated

from all pins

Fig.1 Simplified outline

(SOT186) and symbol.

MBK109

123

MBB008

QUICK REFERENCE DATA

THERMAL CHARACTERISTICS

Notes

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

2. Mounted with heatsink compound and 30 ±5 N force on centre of package.

ISOLATION CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCESM collector-emitter peak voltage VBE =0

BUX84F −800 V

BUX85F −1000 V

VCEO collector-emitter voltage open base

BUX84F −400 V

BUX85F −450 V

VCEsat collector-emitter saturation voltage see Fig.4 −1V

Csat collector saturation current −1A

Ccollector current (DC) −2A

CM collector current (peak value) −3A

tot total power dissipation Th≤25 °C−18 W

tffall time 0.4 −µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-h thermal resistance from junction to external heatsink note 1 7.2 K/W

note 2 4.7 K/W

Rth j-a thermal resistance from junction to ambient 55 K/W

SYMBOL PARAMETER TYP. MAX. UNIT

VisolM isolation voltage from all terminals to external heatsink (peak value) −1500 V

Cisol isolation capacitance from collector to external heatsink 12 −pF

1997 Aug 14 3

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Mounted without heatsink compound and 30 ±5 N force on centre of package.

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCESM collector-emitter peak voltage VBE =0

BUX84F −800 V

BUX85F −1000 V

VCEO collector-emitter voltage open base

BUX84F −400 V

BUX85F −450 V

ICcollector current (DC) −2A

CM collector current (peak value) −3A

Bbase current (DC) −0.75 A

IBM base current (peak value) −1A

tot total power dissipation Th≤25 °C; note 1 −18 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCEOsust collector-emitter sustaining voltage IC= 100 mA; IBoff =0;

L = 25 mH; see Figs 2 and 3

BUX84 400 −−V

BUX85 450 −−V

CEsat collector-emitter saturation voltage IC= 0.3 A; IB=30mA;

see Fig.4 −−0.8 V

IC= 1 A; IB= 200 mA;

see Fig.4 −−1V

BEsat base-emitter saturation voltage IC= 1 A; IB= 200 mA;

see Fig.5 −−1.1 V

ICES collector-emitter cut-off current VCE =V

CESmax; VBE =0 −−0.2 mA

VCE =V

CESmax; VBE =0;

j= 125 °C−−1.5 mA

IEBO emitter-base cut-off current VEB =5V; I

C=0 −−1mA

FE DC current gain VCE =5V; I

C= 5 A; see Fig.6 15 −−

CE =5V; I

C= 100 mA;

see Fig.6 20 50 100

fTtransition frequency VCE =10V; I

C= 200 mA;

f=1MHz −20 −MHz

1997 Aug 14 4

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

Switching times resistive load (see Fig.7)

ton turn-on time ICon = 1 A; IBon = 200 mA;

IBoff =−400 mA; VCC = 250 V −0.2 0.5 µs

tsstorage time ICon = 1 A; IBon = 200 mA;

IBoff =−400 mA; VCC = 250 V −2 3.5 µs

tffall time ICon = 1 A; IBon = 200 mA;

IBoff =−400 mA; VCC = 250 V −0.4 −µs

Con = 1 A; IBon = 200 mA;

IBoff =−400 mA; VCC = 250 V;

Tmb =95°C

−−1.4 µs

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Fig.2 Test circuit for collector-emitter

sustaining voltage.

ndbook, halfpage

MGE252

+ 50 V

100 to 200 Ω

30 to 60 Hz

6 V

oscilloscope

vertical

horizontal

1 Ω

300 Ω

Fig.3 Oscilloscope display for collector-emitter

sustaining voltage.

handbook, halfpage

MGE239

(mA)

250

200

100

0min

VCEOsust

VCE (V)

1997 Aug 14 5

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

Fig.4 Collector-emitter saturation voltage as a function of base current; typical values.

handbook, full pagewidth

0.3

IB (A)

4(1)

VCEsat

(V)

0.05 0.25

MGB908

0.20.1 0.15

(2) (3) (4)

(1) IC= 0.3 A. (2) IC= 0.5 A. (3) IC= 0.7 A. (4) IC=1A. T

j=25°C; solid line: typical values; dotted line: maximum values.

Fig.5 Base-emitter saturation voltage as a

function of emitter current; typical values.

Tj=25°C.

(1) IC=1A.

(2) IC= 0.5 A.

(3) IC= 0.3 A.

handbook, halfpage

0 300

1.0

0.5

MGB904

0.75

100 200

VBEsat

(V)

IB (mA)

(2)

(3)

(1)

Fig.6 DC current gain; typical values.

handbook, halfpage

10−210−1

102

hFE

IC (A) 10

MGB879

typ

1997 Aug 14 6

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

Fig.7 Switching time waveforms with

resistive load.

handbook, halfpage

MBB731

90%

10%

90%

10%

IB on

IB off

IC on

tr ≤30 ns

ton

Fig.8 Test circuit resistive load.

tp=20µs; T = 2 ms; VIM =15V.

handbook, full pagewidth

MGE253

VCC

250V

100

Ω

100 Ω

30 Ω

Ω

200

Ω250

Ω

680

µF

680

µF

100

µF

D.U.T.

BD139

BD140

+25 V

VIM

1997 Aug 14 7

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT186 TO-220

0 5 10 mm

scale

Plastic single-ended package; isolated heatsink mounted;

1 mounting hole; 3 lead TO-220 exposed tabs SOT186

Note

1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.

bwM

123

UNIT D

b1D1eqQPL

cL2

5.08

mm 4.4

4.0

2.9

2.5

0.9

0.7 1.5

1.3 0.55

0.38 17.0

16.4 7.9

7.5

10.2

9.6 5.7

5.3

2.54 14.3

13.5 10 0.4

L1(1)

4.8

4.0 1.4

1.2 4.4

4.0

3.2

3.0

0.9

0.5

DIMENSIONS (mm are the original dimensions)

97-06-11

1997 Aug 14 8

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1997 Aug 14 9

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

NOTES

1997 Aug 14 10

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

NOTES

1997 Aug 14 11

Philips Semiconductors Product speciﬁcation

Silicon diffused power transistors BUX84F; BUX85F

NOTES

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Printed in The Netherlands 137067/00/01/pp12 Date of release: 1997 Aug 14 Document order number: 9397 750 02724