ES1A Thru ES1G 1 AMP SURFACE MOUNT GLAS SUPER FAST RECOVERY RECTIFIER Mi FEATURES Super fast recovery time For surface mount applications molded plastic technique Low forward voltage drop at terminals Glass passivated junction i Mechanical Data e Case: Molded plastic e Polarity: Indicated on cathode e Weight: 0.021 ounces, 0.064 grams Reliable low cost construction utilizing UL recognized 94V-O plastic material High temperature soldering: 250 C/10 seconds Mi Maximum Ratings & Characteristics Ratings at 25 C ambient temperature unless otherwise specified @ Single phase, half wave, 60Hz, resistive or inductive load For capacitive load, derate current by 20% i Outline Drawing SMA i oea(1.6a) | 92) .050(1.27) es tt | 8014.57) | .160(4.08) -103(2.62) .079(2.01) | _} -012(.31) 0.06(1.52)_,| T008(20) T ,006(.15) 1 fe | "004(.10) 0,03(0.76) wok .190(4.83) Dimensions in inches and (millimeters) ES1A ESiB ESsic ES1D ESiG | Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 400 Vv Maximum RMS Input Voltage Vrms 35 70 105 140 280 Vv Maximum DC Blocking Voltage Voc 50 100 150 200 400 Vv Maximum Average Forward Output Current | (AV) 1.0 A 375" 9,5mm lead length @ TL=110C Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave lFsm 30 A Superimposed On Rated Load MaximumForward Voltage Drop At 0.6A Ve 0.90 Vv At 1.0A 0.98 1.25 Maximum Reverse Current At Rated @ Ta = 25C Ir 5 pA DC Blocking Voltage per Bridge Element @ Ta = 100C 200 pA Maximum Reverse Recovery Time* (See Note) ter 20 ns Typical Junction Capacitance** (See Note) Cy 10 pF Typica! Thermal Resistance***(See Note) RetHuL) 25 Ciw Operating Temperature Range Ts -65 to +150 C Storage Temperature Range TstG -65 to +150 C Note: *Test conditions: IF=0.5A, IR = 1.0A, Irr = 0.254 Measured al 1.0 MHZ and applied reverse voltage of 4.0V DC ***Thermal resistance junction to lead measured on PC board 5.0mm? X (0.013mm thick) Collmer Semiconductor, Inc.