FQA17P10 - Fairchild Semiconductor

FQA17P10

QFETTM

Rev. B, August 2002

FQA17P10

100V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• -18A, -100V, RDS(on) = 0.19Ω @VGS = -10 V

• Low gate charge ( typical 30 nC)

• Low Crss ( typical 100 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Absolute Maximum Rat ings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQA17P10 Units

VDSS Drain-Source Voltage -100 V

IDDrain Current - Continuous (TC = 25°C) -18 A

- Continuous (TC = 100°C) -12.7 A

IDM Drain Current - Pulsed (Note 1) -72 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 580 mJ

IAR Avalanche Current (Note 1) -18 A

EAR Repetitive Avalanche Energy (Note 1) 12 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns

PDPower Dissipation (TC = 25°C) 120 W

- Derate above 25°C 0.8 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 1.25 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

TO-3P

FQA Series

GSDS

Rev. B, August 2002

FQA17P10

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.7mH, IAS = -18A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -16.5 A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit ions Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-100 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Vo ltage Temperature

Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = -100 V, VGS = 0 V -- -- -1 µA

VDS = -80 V, TC = 150°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = -250 µA-2.0 -- -4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = -10 V, ID = -9.0 A -- 0.14 0.19 Ω

gFS Forward Transconductance VDS = -40 V, ID = -9.0 A -- 10 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 850 1100 pF

Coss Output Capacitance -- 310 400 pF

Crss Reverse Transfer Capacit ance -- 100 130 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = -50 V, ID = -16.5 A,

RG = 25 Ω

-- 17 45 ns

trTurn-On Rise Time -- 200 410 ns

td(off) Turn-Off De l a y Time -- 4 5 100 ns

tfTurn -Off Fa ll Time -- 1 0 0 210 ns

QgTotal Gate Ch arge VDS = -80 V, ID = -16.5 A,

VGS = -10 V

-- 30 39 nC

Qgs Gate-Source Charge -- 4.8 -- nC

Qgd Gate-Drain Charge -- 17 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- -18 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -72 A

VSD Drain-Source Diode Forward V olt age VGS = 0 V, I S = -18 A -- -- -4.0 V

trr Reverse Recovery Time VGS = 0 V, I S = -16.5 A,

dIF / dt = 100 A/µs

-- 120 -- ns

Qrr Reverse Recovery Charge -- 0.52 -- µC

FQA17P10

Rev. B, August 2002

0 20406080

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

※ N o te : TJ = 25℃

VGS = - 20V

VGS = - 10V

RDS(on) [Ω],

Drain-S ource O n-Resistance

-ID , Drain C u r re n t [A]

10-1 100101

10-1

100

101

VGS

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-5.5 V

-5.0 V

B o tto m : -4.5 V

※ Notes :

1. 250μs Pulse Test

2. TC = 25℃

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

0.0 0.5 1.0 1.5 2.0 2.5 3.0

10-1

100

101

175℃

※ Notes :

1. VGS = 0V

2. 250μs Pulse Test

25℃

-IDR , R ev e rs e D ra in Curren t [A ]

-VSD , Source-Drain Voltage [V]

0 5 10 15 20 25 30 35

VDS = -50V

VDS = -20V

VDS = -80V

※ Note : ID = -16.5 A

-VGS , Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10-1 100101

200

400

600

800

1000

1200

1400

1600

1800

2000

2200 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※ Notes :

1. V GS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

175℃

25℃

-55℃※ Notes :

1. VDS = -40V

2. 250μs Pulse Test

-ID , Drain Current [A]

-VGS , Gate-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitanc e C haracte ri st i cs Figure 6. Ga te Ch arge Cha ra ct eri stics

Figu re 3. On-R esistan ce Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Charact er i st ics

FQA17P10

Rev. B, August 2002

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ No te s :

1 . ZθJC(t) = 1 .2 5 ℃/W M a x .

2 . D u ty F a c to r, D= t 1/t2

3 . TJM - T C = P DM * Z θJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), T herm al R esponse

t1, Sq u a re W a ve P u lse Du ra tio n [se c ]

25 50 75 100 125 150 175

-ID, Drain C urrent [A]

TC, Case Temperature [℃

]

100101102

10-1

100

101

102

DC 10 m s1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 175 oC

3. Single Pulse

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

※ Notes :

1. VGS = -10 V

2. ID = -8.25 A

RDS(ON) , (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1 . VGS = 0 V

2 . ID = -250 μA

-BV DSS , (N orm a liz e d)

Drain-Source Breakdown V oltage

TJ, Junction Tempe rature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Breakdown Voltage Va ri ation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Tr ansient Thermal Res ponse Curve

PDM

FQA17P10

Rev. B, August 2002

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & W aveforms

FQA17P10

Rev. B, August 2002

Peak Diode Recover y dv/dt Test Circ ui t & Waveform s

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQA17P10

Dimensions in Millimeters

Rev. B, August 2002

Package Dimensions

15.60 ±0.20 4.80 ±0.20

13.60 ±0.20

9.60 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20 1.40 ±0.20

ø3.20 ±0.10

3.80 ±0.20

13.90 ±0.20

3.50 ±0.20

16.50 ±0.30

12.76 ±0.20

19.90 ±0.20

23.40 ±0.20

18.70 ±0.20

1.50 +0.15

–0.05

0.60 +0.15

–0.05

5.45TYP

[5.45 ±0.30]5.45TYP

[5.45 ±0.30]

TO-3P

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY A NY LICENSE UNDER ITS PATENT RIGHTS, N OR THE RIGHTS OF OTHERS.

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor .

The datasheet is printed for reference information only.

Rev. I1

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