© 2012 IXYS All rights reserved 1 - 4
20120119b
DLA 100B1200LB
VRRM = 1200 V
IDAV = 124 A
VF = 1.15 V
High Effi ciency Standard Rectifi er
Single Phase Rectifi er Bridge
Features
• Planar passivated chips
• Very low leakage current
• Very low forward voltage drop
• Improved thermal behaviour
Applications
• Diode Bridge for main rectifi cation
Package
• DCB isolated backside
• Isolation Voltage 3000 V
• Epoxy meets UL 94V-0
• RoHS compliant
Diodes
Symbol Conditions Characteristic Values
min. typ. max.
VRRM T
VJ = 25°C 1200 V
IRVR = 1200 V TVJ = 25°C
T
VJ = 150°C
10
0.1
µA
mA
VFIF = 50 A TVJ = 25°C
IF = 100 A
1.23
1.45
V
V
IF = 50 A TVJ = 150°C
IF = 100 A
1.15
1.44
V
V
IDAV rectifi er output current with:
rect. d = 0.5 (per diode)
sine 180° (per diode) TC = 80°C
132
124
A
A
VF0
rF
for power loss calculation only
TVJ = 175°C
0.75
4.2
V
mΩ
RthJC 1.0 K/W
RthJH with thermal transfer paste (IXYS test setup) 1.45 1.6 K/W
TVJ -55 175 °C
Ptot T
C = 25°C 150 W
IFSM t = 10 ms; (50 Hz), sine TVJ = 45°C
t = 8.3 ms; (60 Hz), sine VR = 0 V
400
430
A
A
t = 10 ms; (50 Hz), sine TVJ = 150°C
t = 8.3 ms; (60 Hz), sine VR = 0 V
350
375
A
A
I2tt = 10 ms; (50 Hz), sine TVJ = 45°C
t = 8.3 ms; (60 Hz), sine VR = 0 V
800
780
A2s
A2s
t = 10 ms; (50 Hz), sine TVJ = 150°C
t = 8.3 ms; (60 Hz), sine VR = 0 V
610
570
A2s
A2s
CJVR = 1200 V; f = 1 MHz TVJ = 25°C 13 pF
4 5 6 1 2 39 7
D2 D1
D4 D3
8 = n/c
E72873
8
3 2 1
79
Isolated surface
to heatsink
6 5 4
L1
L2
DC-
DC+
© 2012 IXYS All rights reserved 2 - 4
20120119b
DLA 100B1200LB
Component
Symbol Conditions Characteristic Values
min. typ. max.
IRMS wide pin
standard pin
100
60
A
A
Tstg -55 150 °C
Weight 8g
FC40 130 N
VISOL t = 1 second
t = 1 minute
3000
2500
V
V
dS, dA
dS, dA
pin - pin
pin - backside metal
1.65
4
mm
mm
Ordering Ordering Name Marking on Product Delivering
Mode
Base
Qty
Ordering
Code
Standard DLA100B1200LB-TRR DLA100B1200LB T&R 200 509901
DLA100B1200LB DLA100B1200LB Blister 45 510245
© 2012 IXYS All rights reserved 3 - 4
20120119b
DLA 100B1200LB
Notes:
1) potrusion may add 0.2 mm max. on each side
2) additional max. 0.05 mm per side by punching misalignement
or overlap of dam bar or bending compression
3) DCB area 10 to 50 µm convex;
position of DCB area in relation to plastic rim: ±25 µm
(measured 2 mm from Cu rim)
4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.)
cutting edges may be partially free of plating
(6x) 1 ±0,05 2)
5,5 ±0,1
0,5 ±0,1
25 ±0,2 1)
18 ±0,1
9±0,1 (3x) 2 ±0,05 2)
23 ±0,2
32,7 ±0,5
2,75 ±0,1
5,5 ±0,1
13,5 ±0,1
16,25 ±0,1
19 ±0,1
A
c
4±0,05
0,55
±0,1
2±0,2
4,85 ±0,2
3)
0,05
c
A (8 : 1)
0+0,15
2°
0,1
seating plane
Dimensions in mm
(1 mm = 0.0394“)
XXXXXXXXXX
yywwA
Part number
Date code
Backside DCB
Pin 1 identifier
UL Logo
Data Matrix Code
Digits
1 to 19: Part #
20 to 23: Date Code
24 to 25: Assembly line
26 to 31: Lot #
32: Split Lot
33 to 36: Individual #
~ ~ ~
Assembly line
Example: DLA100B1200LB000000001028A24597300000
© 2012 IXYS All rights reserved 4 - 4
20120119b
DLA 100B1200LB
0.001 0.01 0.1 1
0
100
200
300
400
500
2456789110
102
103
0.00.51.01.52.0
0
20
40
60
80
100
0204060
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160 180 200
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VF [V] t [s]
Id(AV)M [A] Tamb [°C]
t [s]
ZthJC
K/W
0 25 50 75 100 125 150 175
0
20
40
60
80
100
IF
[A]
IFSM
[A]
I2t
[A2s]
t [ms]
Ptot
[W]
TC [°C]
Id(AV)M
[A]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation vs. bridge output current and ambient temperature Fig. 5 Max. bridge output current
vs. case temperature
Fig. 6 Transient thermal impedance junction to case
i Rthi [K/W] ti [s]
1 0.09 0.003
2 0.116 0.062
3 0.386 0.1
4 0.128 0.55
Constants for ZthJC calculation:
50 Hz, 80% VRRM
TVJ = 45°C
TVJ = 150°C
TVJ = 45°C
TVJ = 150°C
VR = 0 V
TVJ = 150°C
125°C
25°C
RthHA:
0.3 K/W
0.7 K/W
1.2 K/W
2 K/W
3 K/W
5 K/W
10 K/W
rect.
D = 0.5
sin. 180°
Ptot = Power losses
of all diodes
sin. 180°
per diode
rect. D = 0.5
per diode
