BAT68W
Aug-23-20011
Silicon Schottky Diodes
For mixer applications in the VHF / UHF range
For high-speed switching applications
1
3
VSO05561
2
BAT68-05W BAT68-06WBAT68-04WBAT68W
EHA07004
1
3
2
EHA07005
1
3
2
EHA07006
1
3
2
13
EHA07002
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT68W
BAT68-04W
BAT68-05W
BAT68-06W
84s
85s
86s
83s
1 = A1
1 = A1
1 = C1
1 = A1
2 =C2
2 = A2
2 = C2
2 n.c.
3 = C1/A2
3 = C1/2
3 = A1/2
3 = C
SOT323
SOT323
SOT323
SOT323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR8 V
Forward current IF130 mA
Total power dissipation BAT68W, TS = 97 °C Ptot 150 mW
BAT68-04W...06W , TS = 92 °C Ptot 150
Junction temperature Tj150 °C
Operating temperature range Top -65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1)
BAT68W
BAT68-04W...06W
RthJS
355
390
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAT68W
Aug-23-20012
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 10 µA V(BR) 8 - - V
Reverse current
VR = 1 V IR- - 0.1 µA
Reverse current
VR = 1 V, TA = 60 °C IR- - 1.2
Forward voltage
IF = 1 mA
IF = 10 mA
VF
-
340
318
390
340
500
mV
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz CT- - 1 pF
Differential forward resistance
IF = 5 mA, f = 10 kHz Rf- - 10
BAT68W
Aug-23-20013
Forward current IF = f (TS)
BAT68W
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
mA
200
I
F
Permissible Pulse Load RthJS = f (tp)
BAT68W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax / IFDC = f (tp)
BAT68W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BAT68W
Aug-23-20014
Forward current IF = f (TS)
BAT68-04W...06W
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
mA
200
I
F
Permissible Pulse Load RthJS = f (tp)
BAT68-04W...06W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax / IFDC = f (tp)
BA 68-04W...06W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BAT68W
Aug-23-20015
Forward current IF = f (VF)
TA = Parameter
0.0
10
EHD07101BAT 68...
Ι
F
F
V
10
10
10
10
-40 C
A
=
mA
-2
-1
0
1
2
C
25 C85 C150
0.1 0.2 0.3 0.4 0.5 V 0.6
T
Differential forward resistance rf = f (IF)
f = 10 kHz
10
EHD07104BAT 68...
r
Ι
f
-1 0
10
1
10 mA
Ω
10
2
F
0
10
1
10
2
10
3
10
Diode capacitance CT = f (VR)
f = 1MHz
0
0
EHD07103BAT 68...
CT
R
V
234
0.5
pF
1.0
1V
