MOTOROLA SC {XSTRS/R FF 4b pe e3u7254 o0460500 wreg areeerser = TE 2 eee eer cat =e OE PTE [serves MOTOROLA SC CXSTRS/R F) - 96d 80900 dD _ Ce - - F- 33-33 _ tte ar ee seaman PNP NPN MOTOROLA , : noes | ("134030 N4033 jm SEMICONDUCTOR M4031 4034 |" M4032 M4035 16 AMPERE MEDIUM-POWER COMPLEMENTARY DARLINGTON SILICON TRANSISTORS POWER TRANSISTORS - - COMPLEMENTARY SILICON f tput devi i i ti leneral purpose 60-100 VOLTS + for use as ou put devices in complementary general purp 150 WATTS amplifier applications. High DC Current Gain heg = 3500 (Typ) @ Ic = 10 Ade @ Monolithic Construction with Built-In Base-Emitter Shunt Resistor = - MAXIMUM RATINGS . MJ4030 | MJ4031 | 1114032 : Rating Symbol | 434033 |Ma4034 | Muaozs | Unit Coltector-Emitter Voltage VCEO 60 80 100 Vde Coflector-Base Voltage Vos 60 80 100 Vide A Emitter-Base Voltage Ves 5.0 Vde Jt 5 | c Collector Current lo 16 Adc | f A Base Current Ig 05 Adc te Lp D Tw Total Device Dissipation @ Tc = 25C. Pp 150 Watts SEATING PLANE Derate above 25C 0.857 wiec |<- F > Operating and Storage Junction Ty. Tstg -65 to +200 % Temperature Range THERMAL CHARACTERISTICS Characteristic | Symbol | Max [ Unit Thermal Resistance, Junction to Case | ajc 1 1.17 | ocw FIGURE 1DARLINGTON CIRCUIT SCHEMATIC Collector NPN Collector 54033 woe OO 4035 | t Bare oO STYLE I: NOTES: I PIN 1, BASE 1. DIAMETER V AND SURFACE W ARE DATUMS I 2 EMITTER 2, POSITIONAL TOLERANCE FOR HOLE Q: \ CASE COLLECTOR [+] 202% 000 Ol wv @] ( , 2. POSITIGNAL TOLERANCE FOR LEADS: Lovo [+ [sox 00 [wy [0 Emitter Emitter CASE 14 3-634 UW chameroeg 97 PNP MJ4030, MJ4031, MJ4032 NPN MJ4033, MJ4034, MJ4035 ELECTRICAL CHARACTERISTICS ( = 25C unless otherwise noted} SC_C(XSTRS/R F) s6p 80801 OD T-33 -33 oe I sti | Symbol | Min Il Max Unit ] OFF CHARACTERISTICS 3 Collector-Emitter Breakdown Voltage(t) VipRiceo Vde (Ig = 100 mAde, tg = 0} MJ4030, M4033 60 - 34031, M14034 80 - M1J4032, MJ4035 100 - Coltector Emitter Leakage Currant iceR mAde (Vcg- 60 Vde, Rge = 1.0k ohm) MJ4020, MJ4033 - 10 (Vg 80 Vac, Rpg = 1.0k ohm) 34031, M4034 - 1.0 (Vcp= 100 Vdc, Rgg =1 Okohm} M4032, MJ4095 - 10 {Vg = 60 Vee, Age =1.0k chm, To = 150C] M4030, M4033 - 50 {Vcep= 80 Voc, Ree =1.0k chm, T= 150C} = M4031, M4094 - 50 {Vep= 100 Vie, Rag =1 0kohm, Te 150C) MJ4032, MJ4035 - 50 Emitter Cutoff Current jEBO - 50 mAdc (Vge = 5.0 Vdc, Ic = OF Collector-Emitter Leakage Current IcEO. mAdc (Veg = 30 Vie. Ig = 0} 444030, M4033 . - 30 (ceE = 40 Vdc, 1g = GO} . M4031, MJ4034 - 30 {Veg = 50 Vac, Ip = 0) M4J4032, Ms4035 ~ 30 ON CHARACTERISTICS(1) BC Current Gain hee 1000 _ _ {lg = 10 Ade, Veg = 3 0 Vde) Collector-Emitter Saturation Voltage VcEisat) Vac (Ig = 10 Adc, Ig = 40 mAdc! - 25 (tc = 16 Ade, Ig = 80 mAdc} - 40 Base-Emitter Voltage VeE - 30 Vde {lg = 10 Adc, Voge = 30 Vdc} (ibPutse Test: Pulse Width S 300 us, Outy Cycle <2 0% FIGURE 2DC CURRENT GAIN 20,000 pre, DC CURRENT GAIN 0.02 0.05 1.0 ig, COLLECTOR CURRENT (AMP) FIGURE 4 ON VOLTAGES 35 @ Ig/lg = 250 VpeE@ V, VOLTAGE (VOLTS) 0 0.02 005 04 05 1.0 50 ic, COLLECTOR CURRENT (AMP) bf. SMALL-SIGNAL CURRENT GAIN Ic, COLLECTOA CURRENT {AMP} There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate 1cVceg limits of the transistor that must be observed for reliable operation; e.g., the transistor ~ 3-635 FIGURE 3 SMALL-SIGNAL CURRENT GAIN To = 25C Voe=3.0Vde = 10 Ade f, FREQUENCY {Hz} FIGURE 5 DC SAFE OPERATING AREA i6 10 50 M4033 20 34031, M4034 . MJ4032, MJ4035 1.0 T= 05 0.2b = THERMAL LIMITATION @ Tg = 250C 4 += BONDING WIRE ATION Ot 2.0 5.0 10 20 50 100 200 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal timitations will reduce the power that can be handled to values less than the limitations im- posed by secondary breakdown. d6 DE fea.7254 oososo1 5 BD