2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm * Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) * High-speed switching: tstg = 1.0 s (typ.) * Complementary to 2SC2655 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage V VEBO -5 Collector current IC -2 A Collector power dissipation PC 900 mW Tj 150 C Tstg -55 to 150 C Junction temperature Storage temperature range JEDEC TO-92MOD JEITA TOSHIBA Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics 2-5J1A Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 -1.0 A Emitter cut-off current IEBO VEB = -5 V, IC = 0 -1.0 A V (BR) CEO IC = -10 mA, IB = 0 -50 V 240 Collector-emitter breakdown voltage hFE (1) VCE = -2 V, IC = -0.5 A 70 hFE (2) VCE = -2 V, IC = -1.5 A 40 Collector-emitter saturation voltage VCE (sat) IC = -1 A, IB = -0.05 A -0.5 V Base-emitter saturation voltage VBE (sat) IC = -1 A, IB = -0.05 A -1.2 V fT VCE = -2 V, IC = -0.5 A 100 MHz VCB = -10 V, IE = 0, f = 1 MHz 40 pF 0.1 1.0 0.1 Transition frequency Collector output capacitance Turn-on time Cob ton 20 s Input Switching time Storage time Fall time Note: hFE (1) classification tstg tf IB1 IB2 IB2 IB1 Output 30 DC current gain s VCC = -30 V -IB1 = IB2 = 0.05 A DUTY CYCLE 1% O: 70 to 140, Y: 120 to 240 1 2004-07-07 2SA1020 Marking A1020 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SA1020 VCE - IC VCE - IC -1.0 -1.0 VCE (V) -0.8 Common emitter Ta = 25C -10 -20 -40 -80 -120 Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter IB = -5 mA -0.6 -160 -200 -0.4 -0.2 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -20 -30 -40 -60 -0.8 -80 -120 -0.6 -160 -180 -200 -0.4 -0.2 0 0 -2.8 -0.4 -0.8 Collector current IC (A) -1.2 -1.6 -2.8 1000 Common emitter Common emitter -20 -60 -30 -80 -120 -0.6 -160 -200 -0.4 VCE = -2 V 500 Ta = -55C hFE -40 IB = -10 mA DC current gain VCE (V) -2.4 hFE - IC VCE - IC Collector-emitter voltage -2.0 Collector current IC (A) -1.0 -0.8 Ta = 100C IB = -5 mA 300 Ta = 100C 25 100 50 -55 30 -0.2 10 -0.01 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -0.03 -2.8 -0.1 -0.3 -3 -1 Collector current IC (A) Collector current IC (A) VCE (sat) - IC VBE (sat) - IC -10 -0.5 Common emitter IC/IB = 20 Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) -1 -0.3 Ta = 100C -0.1 -0.05 -55 -0.03 -0.01 -0.01 25 -0.03 -0.1 -0.3 -1 -5 -3 -1 Collector current IC (A) Ta = -55C -0.5 -0.3 -0.1 -0.01 -3 IC/IB = 20 25 100 -0.03 -0.1 -0.3 -1 -3 Collector current IC (A) 3 2004-07-07 2SA1020 IC - VBE PC - Ta -2.0 1000 PC (W) Common emitter -1.0 Tc = 100C 25 Collector power dissipation Collector current IC (A) VCE = -2 V -1.5 -55 -0.5 0 0 -0.4 -0.8 -1.2 Base-emitter voltage -1.6 VBE 800 600 400 200 0 0 -2.0 40 80 120 Ambient temperature (V) 160 Ta 200 240 (C) Safe Operating Area -5 -3 10 ms* IC max (pulsed)* IC max (continuous) 1 ms* 100 ms* Collector current IC (A) -1 1 s* -0.5 DC operation Ta = 25C -0.3 -0.1 -0.05 -0.03 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. -0.01 -0.1 -0.3 -0.5 -1 -3 -5 Collector-emitter voltage VCEO max -10 VCE -30 -50 -100 (V) 4 2004-07-07 2SA1020 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07