2SA1020
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications
Power Switching Applications
• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SC2655
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −50 V
Collector-emitter voltage VCEO −50 V
Emitter-base voltage VEBO −5 V
Collector current IC −2 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Electrical Characte ristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −50 V, IE = 0 ⎯ ⎯ −1.0 µA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ⎯ ⎯ −1.0 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ⎯ ⎯ V
hFE (1) V
CE = −2 V, IC = −0.5 A 70 ⎯ 240
DC current gain hFE (2) V
CE = −2 V, IC = −1.5 A 40 ⎯ ⎯
Collector-emitter saturation voltage VCE (sat) I
C = −1 A, IB = −0.05 A ⎯ ⎯ −0.5 V
Base-emitter saturation voltage VBE (sat) I
C = −1 A, IB = −0.05 A ⎯ ⎯ −1.2 V
Transition frequency fT V
CE = −2 V, IC = −0.5 A ⎯ 100 ⎯ MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ⎯ 40 ⎯ pF
Turn-on time ton ⎯ 0.1 ⎯
Storage time tstg ⎯ 1.0 ⎯
Switching time
Fall time tf
−IB1 = IB2 = 0.05 A
DUTY CYCLE ≤ 1%
⎯ 0.1 ⎯
µs
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
20
µ
sInput IB2
IB1
Output
VCC
=
−
30 V
IB1
30 Ω
IB2
2SA1020
2004-07-07
2
Mark ing
A1020
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
2SA1020
2004-07-07
3
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
VCE – IC
Collector current IC (A)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE – IC
DC current gain hFE
Collector current IC (A)
hFE – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Common emitter
Ta = 25°C
0
0
−1.0
−0.2
IB = −5 mA
−0.4
−0.6
−0.8
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
−80
−200
−40 −20
−120
−2.8
−160
−10
Common emitter
Ta = 100°C
0
0
−1.0
−0.2
IB = −5 mA
−0.4
−0.6
−0.8
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
−80
−30 −60 −40
−180
−2.8
−200
−160
−120
−20
0
0
−1.0
−0.2
IB = −10 mA
−0.4
−0.6
−0.8
−0.4 −0.8 −1.2 −1.6 −2.0 −2.4
−120
−80 −30−20
−160
−2.8
−200
−60 −40
Common emitter
Ta = −55°C
Common emitter
IC/IB = 20
−1
−0.01
−0.5
−0.03
−0.05
−0.1
−0.3
−0.01 −0.03 −0.1 −0.3 −1 −3
Ta = 100°C
−55
25
Common emitter
IC/IB = 20
−10
−0.1
−5
−0.3
−0.5
−1
−3
−0.01 −0.03 −0.1 −0.3 −1 −3
Ta = −55°C
25
100
Common emitter
VCE = −2 V
1000
10
500
30
50
100
300
−0.01 −0.03 −0.1 −0.3 −1
Ta = 100°C
−55
25
−3
2SA1020
2004-07-07
4
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
0
0
Common emitter
VCE = −2 V
25 −55
Tc = 100°C
−2.0
−0.4 −0.8 −1.2 −1.6 −2.0
−0.5
−1.0
−1.5
0
0
40 80 120 160 200 240
200
400
1000
600
800
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
−0.01
−0.1
−5
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
−30 −100−5 −10 −1 −3
−0.03
−0.05
−0.1
−0.3
−0.5
−1
−3
−50
1 s*
−0.5 −0.3
IC max (continuous)
2SA1020
2004-07-07
5
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
