NTE2379 MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Drain Current, ID Continuous (VGS = 10V) TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V/ns Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Maximum Lead Temperature (During Soldering, 1/16" from case, 10sec), TL . . . . . . . . . . . . +300C Thermal Resistance: Maximum Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Typical Case-to-Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5C/W Maximum Junction-to-Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +25C, l = 27mH, RG = 25, IAS = 6.2A. Note 3. ISD 6.2A, di/dt 80A/A, VDD V(BR)DSS, TJ +150C. Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A 600 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 - 4.0 V Gate-Source Leakage Forward IGSS VGS = 20V - - 100 nA Gate-Source Leakage Reverse IGSS VGS = -20V - - -100 nA Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0 - - 100 A VDS = 480V, VGS = 0, TC = +150C - - 500 A RDS(on) VGS = 10V, ID = 3.7A, Note 4 - - 1.2 Forward Transconductance gfs VDS 100V, ID = 3.7A, Note 4 4.7 - - mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz - 1300 - pF Output Capacitance Coss - 160 - pF Reverse Transfer Capacitance Crss - 30 - pF Turn-On Delay Time td(on) - 32 - ns - 18 - ns td(off) - 55 - ns tf - 20 - ns - - 60 nC Static Drain-Source ON Resistance Rise Time Turn-Off Delay Time Fall Time tr VDD = 300V, ID = 6.2A, RG = 9.1, RD = 47, Note 4 Total Gate Charge Qg Gate-Source Charge Qgs - - 8.3 nC Gate-Drain ("Miller") Charge Qgd - - 30 nC Internal Drain Inductance LD - 4.5 - nH Internal Source Inductance LS - 7.5 - nH (Body Diode) - - 6.2 A VGS = 10V, ID = 6.2A, VDS = 360V Between lead, 6mm (.250 in) from package and center of die contact Source-Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 - - 25 A Diode Forward Voltage VSD TJ = +25C, IS = 6.2A, VGS = 0V, Note 4 - - 1.5 V Reverse Recovery Time trr - 450 940 ns Reverse Recovery Charge Qrr TJ = +25C, IF = 6.2A, di/dt = 100A/s, Note 4 - 3.8 7.9 C Forward Turn-On Time ton Intrinsic turn-on time is neglegible (turn-on is dominated by LS + LD) Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab