MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, these devices are ideal for low-power surface mount applications where board space is at a premium. MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 * hFE, 100-300 * Low VCE(sat), 0.4 V 6 5 * Simplifies Circuit Design * Reduces Board Space 1 * Reduces Component Count * Available in 8 mm, 7-inch/3,000 Unit Tape and Reel 2 4 3 CASE 419B-01, STYLE 1 MBT3904DW1T1 (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) VCEO 40 -40 Vdc Collector - Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) VCBO 60 -40 Vdc Emitter - Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) VEBO 6.0 -5.0 Vdc Collector Current -- Continuous MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) IC Q1 (4) Q2 (5) (6) MBT3906DW1T1 (3) (2) (1) mAdc 200 -200 Q1 Q2 THERMAL CHARACTERISTICS Characteristic Total Package Dissipation(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 150 mW RqJA 833 C/W TJ, Tstg - 55 to +150 C (4) (5) (6) MBT3946DW1T1* 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. DEVICE MARKING (3) (2) Q1 (4) (1) Q2 (5) (6) MBT3904DW1T1 = MA MBT3946DW1T1 = 46 MBT3906DW1T1 = A2 Thermal Clad is a trademark of the Bergquist Company. Motorola, Small-Signal Inc. 1997 Motorola Transistors, FETs and Diodes Device Data *Q1 same as MBT3906DW1T1 Q2 same as MBT3904DW1T1 1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max 40 -40 -- -- 60 -40 -- -- 6.0 -5.0 -- -- -- -- 50 -50 -- -- 50 -50 MBT3904DW1T1 (NPN) 40 70 100 60 30 -- -- 300 -- -- MBT3906DW1T1 (PNP) 60 80 100 60 30 -- -- 300 -- -- MBT3904DW1T1 (NPN) -- -- 0.2 0.3 MBT3906DW1T1 (PNP) -- -- -0.25 -0.4 MBT3904DW1T1 (NPN) 0.65 -- 0.85 0.95 MBT3906DW1T1 (PNP) -0.65 -- -0.85 -0.95 300 250 -- -- -- -- 4.0 4.5 -- -- 8.0 10.0 Characteristic Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = -1.0 mAdc, IB = 0) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = -10 mAdc, IE = 0) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = -10 mAdc, IC = 0) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)CEO Vdc V(BR)CBO Vdc V(BR)EBO Vdc IBL nAdc ICEX nAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE -- VCE(sat) Vdc VBE(sat) Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MHz Cobo pF Cibo pF 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Characteristic Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Small - Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, IC = -1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Min Max 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 -- -- 5.0 4.0 k hie X 10- 4 hre hfe -- mmhos hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3904DW1T1 (NPN) (VCE = -5.0 Vdc, IC = -100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3906DW1T1 (PNP) Unit NF dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) (VCC = -3.0 Vdc, VBE = 0.5 Vdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) td -- -- 35 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = -10 mAdc, IB1 = -1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) tr -- -- 35 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) ts -- -- 200 225 Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = -1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) tf -- -- 50 75 ns ns Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 (NPN) DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms +3 V t1 +10.9 V DUTY CYCLE = 2% 275 275 10 k 10 k 0 - 0.5 V Cs < 4 pF* < 1 ns Cs < 4 pF* 1N916 - 9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 MBT3904DW1T1 (NPN) 5.0 Cibo 3.0 Cobo 2.0 MBT3904DW1T1 (NPN) VCC = 40 V IC/IB = 10 2000 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 3000 1000 700 500 QT 300 200 QA 1.0 0.1 4 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 200 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 (NPN) 500 500 IC/IB = 10 100 70 tr @ VCC = 3.0 V 50 30 20 VCC = 40 V IC/IB = 10 300 200 t r, RISE TIME (ns) TIME (ns) 300 200 40 V 100 70 50 30 20 15 V 10 7 5 10 MBT3904DW1T1 (NPN) 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 Figure 5. Turn - On Time Figure 6. Rise Time 500 ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 200 50 70 100 IC, COLLECTOR CURRENT (mA) VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 t f , FALL TIME (ns) t s , STORAGE TIME (ns) IC/IB = 20 200 MBT3904DW1T1 (NPN) IC, COLLECTOR CURRENT (mA) 500 300 200 7 5 100 70 IC/IB = 20 50 IC/IB = 10 30 20 10 7 5 2.0 3.0 IC/IB = 10 30 20 10 MBT3904DW1T1 (NPN) 1.0 100 70 50 5.0 7.0 10 20 30 50 70 100 7 5 200 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 200 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 MBT3904DW1T1 (NPN) 4.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 W IC = 1.0 mA 10 20 40 100 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 0 MBT3904DW1T1 (NPN) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure Motorola Small-Signal Transistors, FETs and Diodes Device Data 40 100 5 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 (NPN) h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 h fe , CURRENT GAIN MBT3904DW1T1 (NPN) 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 20 10 5 2 1 10 MBT3904DW1T1 (NPN) 50 0.1 0.2 MBT3904DW1T1 (NPN) 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance 6 5.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) h ie , INPUT IMPEDANCE (k OHMS) 20 0.2 5.0 10 Figure 12. Output Admittance Figure 11. Current Gain 10 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 MBT3904DW1T1 (NPN) 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 14. Voltage Feedback Ratio Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1 (NPN) h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V MBT3904DW1T1 (NPN) +25C 1.0 0.7 - 55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C MBT3904DW1T1 (NPN) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25C MBT3904DW1T1 (NPN) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 - 55C TO +25C - 0.5 - 55C TO +25C - 1.0 +25C TO +125C qVB FOR VBE(sat) - 1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) 1.0 V, VOLTAGE (VOLTS) MBT3904DW1T1 (NPN) VBE(sat) @ IC/IB =10 1.0 2.0 5.0 10 20 50 100 200 - 2.0 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data 180 200 7 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW1T1 (PNP) 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k +0.5 V 10 k 0 Cs < 4 pF* 10.6 V Cs < 4 pF* 1N916 10 < t1 < 500 ms 300 ns DUTY CYCLE = 2% DUTY CYCLE = 2% t1 10.9 V * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 5000 10 MBT3906DW1T1 (PNP) Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) 7.0 VCC = 40 V IC/IB = 10 3000 2000 Cibo 3.0 2.0 MBT3906DW1T1 (PNP) 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 100 70 50 20 30 40 1.0 2.0 3.0 Figure 21. Capacitance 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 22. Charge Data 500 500 IC/IB = 10 MBT3906DW1T1 (PNP) 300 200 MBT3906DW1T1 (PNP) 300 200 VCC = 40 V IB1 = IB2 100 70 50 t f , FALL TIME (ns) TIME (ns) IC/IB = 20 tr @ VCC = 3.0 V 15 V 30 20 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 8 10 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 23. Turn - On Time Figure 24. Fall Time 200 Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW1T1 (PNP) TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 IC = 0.5 mA 8 6 IC = 50 mA 4 IC = 100 mA 2 MBT3906DW1T1 (PNP) 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 MBT3906DW1T1 (PNP) 0 100 0.1 0.2 40 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 25. 100 Figure 26. h PARAMETERS (VCE = - 10 Vdc, f = 1.0 kHz, TA = 25C) 100 h fe , DC CURRENT GAIN MBT3906DW1T1 (PNP) 200 100 70 50 hoe, OUTPUT ADMITTANCE (m mhos) 300 MBT3906DW1T1 (PNP) 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 h ie , INPUT IMPEDANCE (k OHMS) 20 MBT3906DW1T1 (PNP) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 28. Output Admittance 5.0 7.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 27. Current Gain 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 29. Input Impedance Motorola Small-Signal Transistors, FETs and Diodes Device Data 10 7.0 MBT3906DW1T1 (PNP) 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 30. Voltage Feedback Ratio 9 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW1T1 (PNP) h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 - 55C 0.5 0.3 MBT3906DW1T1 (PNP) 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 70 50 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 31. DC Current Gain 1.0 TJ = 25C MBT3906DW1T1 (PNP) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 32. Collector Saturation Region TJ = 25C VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) q V , TEMPERATURE COEFFICIENTS (mV/ C) 1.0 VBE @ VCE = 1.0 V 0.6 MBT3906DW1T1 (PNP) 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 33. "ON" Voltages 10 100 200 1.0 0.5 qVC FOR VCE(sat) 0 +25C TO +125C - 55C TO +25C MBT3906DW1T1 (PNP) - 0.5 +25C TO +125C - 1.0 - 55C TO +25C qVB FOR VBE(sat) - 1.5 - 2.0 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 180 200 Figure 34. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT-363 EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE 0.65 mm 0.65 mm 0.4 mm (min) 0.5 mm (min) 1.9 mm SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows: PD = TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small-Signal Transistors, FETs and Diodes Device Data 11 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 PACKAGE DIMENSIONS A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 5 4 -B- S 1 2 DIM A B C D G H J K N S V 3 D 6 PL 0.2 (0.008) M B M N J C INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 STYLE 1: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 K H CASE 419B-01 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 Mfax: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 12 MBT3904DW1T1/D Motorola Small-Signal Transistors, FETs and Diodes Device Data