TPSMB6.8 thru TPSMB43A www.vishay.com Vishay General Semiconductor Surface Mount PAR(R) Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES * Junction passivation optimized design passivated anisotropic rectifier technology * TJ = 185 C capability suitable for high reliability and automotive requirement * Available in uni-directional polarity only * 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % * Excellent clamping capability DO-214AA (SMBJ) * Very fast response time * Low incremental surge resistance PRIMARY CHARACTERISTICS * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C VBR 6.8 V to 43 V VWM 5.50 V to 36.8 V PPPM 600 W IFSM 75 A * AEC-Q101 qualified * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MECHANICAL DATA TJ max. 185 C Polarity Uni-directional Package DO-214AA (SMBJ) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. Case: DO-214AA (SMBJ) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) (1)(2) Peak pulse current with a 10/1000 s waveform (fig. 3) (1) Peak forward surge current 8.3 ms single half sine-wave (2)(3) Maximum instantaneous forward voltage at 50 A (2)(3) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 600 W IPPM See table next page A IFSM 75 A VF 3.5 V TJ, TSTG -65 to +185 C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal (3) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum Revision: 06-Jun-14 Document Number: 88406 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMB6.8 thru TPSMB43A www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) DEVICE TYPE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (1) AT IT (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM IR (A) MAXIMUM REVERSE LEAKAGE AT VWM TJ = 150 C ID (A) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MIN. MAX. TPSMB6.8 KDP 6.12 7.48 10 5.5 500 1000 55.6 10.8 TPSMB6.8A KEP 6.45 7.14 10 5.8 500 1000 57.1 10.5 TPSMB7.5 KFP 6.75 8.25 10 6.05 250 500 51.3 11.7 TPSMB7.5A KGP 7.13 7.88 10 6.4 250 500 53.1 11.3 TPSMB8.2 KHP 7.38 9.02 10 6.63 100 200 48 12.5 TPSMB8.2A KKP 7.79 8.61 10 7.02 100 200 49.6 12.1 TPSMB9.1 KLP 8.19 10 1 7.37 25 50 43.5 13.8 TPSMB9.1A KMP 8.65 9.55 1 7.78 25 50 44.8 13.4 TPSMB10 KNP 9 11 1 8.1 5 20 40 15 TPSMB10A KPP 9.5 10.5 1 8.55 5 20 41.4 14.5 TPSMB11 KQP 9.9 12.1 1 8.92 2 5 37 16.2 TPSMB11A KRP 10.5 11.6 1 9.4 2 5 38.5 15.6 TPSMB12 KSP 10.8 13.2 1 9.72 2 5 34.7 17.3 TPSMB12A KTP 11.4 12.6 1 10.2 2 5 35.9 16.7 TPSMB13 KUP 11.7 14.3 1 10.5 2 5 31.6 19 TPSMB13A KVP 12.4 13.7 1 11.1 2 5 33 18.2 TPSMB15 KWP 13.5 16.5 1 12.1 1 5 27.3 22 TPSMB15A KXP 14.3 15.8 1 12.8 1 5 28.3 21.2 TPSMB16 KYP 14.4 17.6 1 12.9 1 5 25.5 23.5 TPSMB16A KZP 15.2 16.8 1 13.6 1 5 26.7 22.5 TPSMB18 LDP 16.2 19.8 1 14.5 1 5 22.6 26.5 TPSMB18A LEP 17.1 18.9 1 15.3 1 5 23.8 25.2 TPSMB20 LFP 18 22 1 16.2 1 5 20.6 29.1 TPSMB20A LGP 19 21 1 17.1 1 5 21.7 27.7 TPSMB22 LHP 19.8 24.2 1 17.8 1 5 18.8 31.9 TPSMB22A LKP 20.9 23.1 1 18.8 1 5 19.6 30.6 TPSMB24 LLP 21.6 26.4 1 19.4 1 5 17.3 34.7 TPSMB24A LMP 22.8 25.2 1 20.5 1 5 18.1 33.2 TPSMB27 LNP 24.3 29.7 1 21.8 1 5 15.3 39.1 TPSMB27A LPP 25.7 28.4 1 23.1 1 5 16 37.5 TPSMB30 LQP 27 33 1 24.3 1 5 13.8 43.5 TPSMB30A LRP 28.5 31.5 1 25.6 1 5 14.5 41.4 TPSMB33 LSP 29.7 36.3 1 26.8 1 5 12.6 47.7 TPSMB33A LTP 31.4 34.7 1 28.2 1 5 13.1 45.7 TPSMB36 LUP 32.4 39.6 1 29.1 1 5 11.5 52 TPSMB36A LVP 34.2 37.8 1 30.8 1 5 12 49.9 TPSMB39 LWP 35.1 42.9 1 31.6 1 5 10.6 56.4 TPSMB39A LXP 37.1 41 1 33.3 1 5 11.1 53.9 TPSMB43 LYP 38.7 47.3 1 34.8 1 5 9.7 61.9 TPSMB43A LZP 40.9 45.2 1 36.8 1 5 10.1 59.3 Notes (1) V BR measured after IT applied for 300 s, IT = square wave pulse or equivalent (2) Surge current waveform per fig. 3 and derated per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 Revision: 06-Jun-14 Document Number: 88406 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMB6.8 thru TPSMB43A www.vishay.com Vishay General Semiconductor ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE TPSMB6.8AHE3/52T (1) PREFERRED P/N 0.096 52T 750 7" diameter plastic tape and reel TPSMB6.8AHE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 C 10 1.0 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. td 0 1.0 s 10 s 100 s 1.0 ms 10 ms 0 1.0 2.0 3.0 td - Pulse Width (s) t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 4.0 10 000 100 Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 75 50 25 VR measured at Zero Bias 1000 VR measured at Stand-Off Voltage, VWM 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 0 0 50 100 150 200 1 10 TJ - Initial Temperature (C) VBR - Breakdown Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance 100 Revision: 06-Jun-14 Document Number: 88406 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TPSMB6.8 thru TPSMB43A www.vishay.com Vishay General Semiconductor 100 Peak Forward Surge Current (A) TJ = TJ max. 8.3 ms Single Half Sine-Wave 10 1 100 10 Number of Cycles at 60 Hz Fig. 5 - Maximum Non-Repetitive/Peak Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMBJ) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) MIN. 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) 0.008 (0.203) Max. 0.220 REF. Revision: 06-Jun-14 Document Number: 88406 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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